NPN EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * High Power Dissipation: PC=30W (TA=25°C) * Complementary to 2SB834

POWER TRANSISTORS(3A,60V,30W)

NPN SILICON POWER TRANSISTORS designed for use in audio frequency power amplifier applications

NPN Silicon Epitaxial Power Transistor

FEATURES: * Low frequency power amplifier * Complement to 2SB834

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for low frequency power amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2SB834 • Low collector saturation voltage APPLICATIONS • Designed for use in audio frequency power amplifier applications

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Low Frequency Power Amplifier • Complement to 2SB834

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications

It is intented for use in power amplifier and switching applications.

DESCRIPTION It is intented for use in power amplifier and switching applications.

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

Complement to 2SB834

丝印代码：D880；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complement to 2SB834

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High DC current gain, low saturation voltage, high power dissipation, complementary to 2SB834. Applications Audio frequency power amplifier applications.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Bipolar Transistor

The UTC 2SD880 is designed for audio frequency power amplifier applications. • High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) \n• Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) \n• High Power Dissipation: PC=30W (TA=25°C) \n• Complementary to 2SB834;

普通三极管

60V,3A,Medium Power NPN Bipolar Transistor

TRANSISTOR (NPN)

文件：265.77 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：104.95 Kbytes Page：3 Pages

NPN EPITAXIAL TRANSISTOR

文件：154.63 Kbytes Page：4 Pages

NPN Silicon Power Transistors

Features • With TO-220 package • Power amplifier applications • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

NPN Silicon Power Transistors

Features • With TO-220 package • Power amplifier applications • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

SILICON PLASTIC POWER TRANSISTOR

NPN 2SD880Y 3A 30W * Collector-Emitter Voltage: VCEO=60V * DC Current Gain: 20 @ IC=3A * TO-220 Package

NPN Silicon Power Transistors

Features • With TO-220 package • Power amplifier applications • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

NPN EPITAXIAL TRANSISTOR

文件：154.63 Kbytes Page：4 Pages

NPN EPITAXIAL TRANSISTOR

文件：184.24 Kbytes Page：4 Pages

NPN EPITAXIAL TRANSISTOR

文件：184.24 Kbytes Page：4 Pages

NPN EPITAXIAL TRANSISTOR

文件：184.24 Kbytes Page：4 Pages

NPN EPITAXIAL TRANSISTOR

文件：154.63 Kbytes Page：4 Pages

NPN EPITAXIAL TRANSISTOR

文件：154.63 Kbytes Page：4 Pages

NPN EPITAXIAL TRANSISTOR

文件：184.24 Kbytes Page：4 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 60V 3A TO220AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 60V 3A TO220AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个