Low Frequency Transistor(20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

Low Frequency Transistor

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

NPN Plastic-Encapsulate Transistor

FEATURES • Excellent Current-to-Gain Characteristics • Low Collector Saturation Voltage, • VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent current gain characteristic, Complementary to 2SB1424. Applications General purpose amplifier.

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

NPN General use transistor

FEATURES Power dissipation PCM : 0.5 W Tamb=25°C Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

Plastic-Encapsulate Transistors

FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A

LOW FREQUENCY TRANSISTER

FEATURES ● Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A). ● Excellent current gain characteristics. ● Complements the 2SB1424.

LOW FREQUENCY TRANSISTER (20V,3A)

FEATURES Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A). Excellent current gain characteristics. Complements the 2SB1424.

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent current-to-gain characteristics • Low collector saturation voltage VCE(sat) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rati

NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent current-to-gain characteristics • Low collector saturation voltage VCE(sat) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rati

NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

TRANSISTOR NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.5 W Tamb=25°C Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

Silicon NPN epitaxial planar type(For power switching)

Silicon NPN epitaxial planar type For power switching ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector to emitter saturation voltage • Large collector current IC APPLICATIONS • For power switching applicaitons

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector to emitter saturation voltage • Large collector current IC APPLICATIONS • For power switching applicaitons

TO-92 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Saturation Medium Current Application

TO-92 Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Saturation Medium Current Application

NPN Plastic Encapsulated Transistor

FEATURES • Small Flat Package • General Purpose Application

High gain amplifier transistor (25V / 2A)

Features 1)Low saturation voltage.　typically VCE(sat)=120mV at IC/IB=1A/20mA 2)High DC current gain Application LOW FREQUENCY POWER AMP

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low saturation voltage ● Excellent DC current gain characteristics

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low saturation voltage Excellent DC current gain characteristics

High gain amplifier transistor (25V, 2A)

Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics.

High Gain Amplifier Transistor

Features ● Low saturation voltage. ● Excellent DC current gain characteristics.

High gain amplifier transistor (25V / 2A)

Features 1)Low saturation voltage.　typically VCE(sat)=120mV at IC/IB=1A/20mA 2)High DC current gain Application LOW FREQUENCY POWER AMP

High gain amplifier transistor (25V / 2A)

Features 1)Low saturation voltage.　typically VCE(sat)=120mV at IC/IB=1A/20mA 2)High DC current gain Application LOW FREQUENCY POWER AMP

NPN Plastic Encapsulated Transistor

FEATURES • Small Flat Package • General Purpose Application

NPN Plastic Encapsulated Transistor

FEATURES • Small Flat Package • General Purpose Application

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SB1429 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICAITONS • Complementary to 2SB1429 • Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SB1429 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

NPN Plastic Encapsulated Transistor

文件：313.36 Kbytes Page：2 Pages

Low Frequency Transistor (20V, 3A)

文件：167.26 Kbytes Page：3 Pages

20V,3A,General Purpose NPN Bipolar Transistor

晶体三极管

晶体管

Low Frequency Transistor (20V, 3A)

文件：167.26 Kbytes Page：3 Pages

NPN Plastic Encapsulated Transistor

文件：313.36 Kbytes Page：2 Pages

NPN Transistors

文件：1.18967 Mbytes Page：2 Pages

NPN Plastic Encapsulated Transistor

文件：313.36 Kbytes Page：2 Pages

NPN Transistors

文件：1.18967 Mbytes Page：2 Pages

NPN Transistors

文件：1.18967 Mbytes Page：2 Pages

NPN Transistor

文件：498.08 Kbytes Page：3 Pages

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS NPN 20V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：113.46 Kbytes Page：3 Pages

TO-92 Plastic-Encapsulate Transistors

文件：405.21 Kbytes Page：3 Pages

High gain amplifier transistor (25V, 2A)

文件：164.58 Kbytes Page：3 Pages

High gain amplifier transistor (25V, 2A)

文件：164.58 Kbytes Page：3 Pages

NPN Transistors

文件：990.19 Kbytes Page：2 Pages

NPN Plastic Encapsulated Transistor

文件：341.18 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：224.04 Kbytes Page：4 Pages

SILICON NPN TRIPLE-DIFFUSED PLANAR TYPE

文件：255.67 Kbytes Page：2 Pages