丝印代码：CFRN；NPN Transistor

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丝印代码：CFR；Low Frequency Transistor(20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

Low Frequency Transistor

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

NPN Plastic-Encapsulate Transistor

FEATURES • Excellent Current-to-Gain Characteristics • Low Collector Saturation Voltage, • VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A

NPN Plastic Encapsulated Transistor

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