丝印代码：CFS*；NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Excellent current-to-gain characteristics • Low collector saturation voltage VCE(sat) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rati

中等功率双极型晶体管

NPN Transistors

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NPN Transistors

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

TRANSISTOR NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.5 W Tamb=25°C Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

封装/外壳：TO-243AA 包装：带盒（TB） 描述：TRANS NPN 20V 3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low Frequency Transistor

■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412

NPN Plastic-Encapsulate Transistor

FEATURES • Excellent Current-to-Gain Characteristics • Low Collector Saturation Voltage, • VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A

丝印代码：CFR；Low Frequency Transistor(20V, 3A)

Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （ IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424.

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

NPN Plastic Encapsulated Transistor

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