NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING

NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers o

High Voltage, Low Speed Switching Industrial Use

NPN Silicon Triple Diffused Darlington Transistor High Voltage, Low Speed Switching Industrial Use

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) • High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A • Minimum Lot-to-Lot variations for robust device performance and reliab

DARLINGTON POWER TRANSISTOR

NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers of