NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING

NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers o

DARLINGTON POWER TRANSISTOR

NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers of

High Voltage, Low Speed Switching Industrial Use

NPN Silicon Triple Diffused Darlington Transistor High Voltage, Low Speed Switching Industrial Use

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) • High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A • Minimum Lot-to-Lot variations for robust device performance and reliab

Transistor-Bipolar Power Transistors