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2SD14晶体管资料

  • 2SD14别名：2SD14三极管、2SD14晶体管、2SD14晶体三极管

  • 2SD14生产厂家：日本松下公司

  • 2SD14制作材料：Si-NPN

  • 2SD14性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SD14封装形式：特殊封装

  • 2SD14极限工作电压：75V

  • 2SD14最大电流允许值：10A

  • 2SD14最大工作频率：<1MHZ或未知

  • 2SD14引脚数：3

  • 2SD14最大耗散功率：100W

  • 2SD14放大倍数：

  • 2SD14图片代号：D-111

  • 2SD14vtest：75

  • 2SD14htest：999900

  • 2SD14atest：10

  • 2SD14wtest：100

  • 2SD14代换 2SD14用什么型号代替：BD245B,BDV93,2SC2681,3DD70C,

2SD14价格

参考价格：￥0.7085

型号：2SD145000A 品牌：Panasonic 备注：这里有2SD14多少钱，2024年最近7天走势，今日出价，今日竞价，2SD14批发/采购报价，2SD14行情走势销售排行榜，2SD14报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SD1400

NPNTRIPLEDIFFUSEDPLANARTYPESILICONTRANSISTORFORCTVHORIZONTALDEFLECTIONOUTPUT

FORCTVHORIZONTALDEFLECTIONOUTPUT Features: •Highbreakdownvoltageandhighreliability •Highswitchingspeed •Capableofbeingmountedeasilydueone-pointfixingtypeplasticmoldpackage

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1400

iscSiliconNPNPowerTransistor

DESCRIPTION •HighBreakdownVoltage-:VCBO=1500V(Min) •HighSwitchingSpeed APPLICATIONS •DesignedforcolorTVhorizontaloutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1401

NPNTRIPLEDIFFUSEDPLANARTYPESILICONTRANSISTORFORCTVHORIZONTALDEFLECTIONOUTPUT

FORCTVHORIZONTALDEFLECTIONOUTPUT Features: •Highbreakdownvoltageandhighreliability •Highswitchingspeed •Capableofbeingmountedeasilyduetoone-pointfixingtypeplasticmoldpackage

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SD1402

NPNTRIPLEDIFFUSED(COLORTVHORIZONTALOUTPUT)

COLORTVHORIZONTALOUTPUTAPPLICATIONS(NoDamperDiode) *HighCollector-BaseVoltage(VCBO=1500V) *HighSpeedSwitching

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SD1402

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highspeedswitching •Highvoltage,highreliability •Wideareaofsafeoperation APPLICATIONS •ForCRThorizontaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1403

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highspeedswitching •Highvoltage,highreliability •Wideareaofsafeoperation APPLICATIONS •ForCRThorizontaloutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1403

SiliconDiffusedPowerTransistor(GENERALDESCRIPTION)

GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticenvelopewithintegratedefficiencydiode,primarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SD1403

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Highspeedswitching •Highvoltage,highreliability •Wideareaofsafeoperation APPLICATIONS •ForCRThorizontaloutputapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1404

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollectorCurrentCapability •HighCollectorPowerDissipationCapability •Built-inDamperDiode APPLICATIONS •B/WTVhorizontaldeflectionoutputapplications. •Highvoltageswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1406

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Collectorpowerdissipation:PC=25W@TC=25 ·Lowcollectorsaturationvoltage ·Complementtotype2SB1015 APPLICATIONS ·Foraudiofrequencypoweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1406

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Collectorpowerdissipation:PC=25W@TC=25℃ ·Lowcollectorsaturationvoltage ·Complementtotype2SB1015 APPLICATIONS ·Foraudiofrequencypoweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1406

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1406GR

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1406O

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1406Y

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1407

PNPEPITAXIALSILICONTRANSISTOR(POWERAMPLIFIERVERTICALDEFLECTIONOUTPUT)

POWERAMPLIFIERVERTICALDEFLECTIONOUTPUT ●Complementto2SB1016

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SD1407

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Highbreakdownvoltage •Lowcollectorsaturationvoltage •Complementtotype2SB1016 APPLICATIONS •Poweramplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1407

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •Highbreakdownvoltage •Lowcollectorsaturationvoltage •Complementtotype2SB1016 APPLICATIONS •Poweramplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1407A

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=100V •Lowcollectorsaturationvoltage:VCE(sat)=2.0V(max) •Complementaryto2SB1016A

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1407A

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=100V •Lowcollectorsaturationvoltage:VCE(sat)=2.0V(max) •Complementaryto2SB1016A

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1407A-Y

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=100V •Lowcollectorsaturationvoltage:VCE(sat)=2.0V(max) •Complementaryto2SB1016A

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1408

iscSiliconNPNPowerTransistor

DESCRIPTION ·LowCollectorSaturationVoltage:VCE(sat)=1.5V(Max)@IC=3A ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) ·ComplementtoType2SB1017 APPLICATIONS ·Designedforpoweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1408

SILICONNPNTRIPLEDIFFUSEDTYPE

POWERAMPLIFIERAPPLICATIONS.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1409

SILICONNPNDARLINGTONTRANSISTOR(GENERALDESCRIPTION)

GENERALDESCRIPTION Daringtontransistoraredesignedforuseasgeneralpurposeamplifiers,switchingandmotorcontrolapplications.

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SD1409

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •HighDCcurrentgain •Monolithicconstructionwithbuilt-inbase-emitter shuntresistor APPLICATIONS •Igniterapplications •Highvolitageswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SD1409

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Igniterapplications •Highvolitageswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1409

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •DARLINGTON APPLICATIONS •Igniterapplications •Highvolitageswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1409A

NPNTRIPLEDIFFUSEDTYPE(IGNITER,HIGHVOLTAGESWITCHINGAPPLICATIONS)

IGNITERAPPLICATIONS. HIGHVOLTAGESWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1409A

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Highcollector-emitterbreakdownvoltage- :V(BR)CEO=400V(Min) •HighDCcurrentGain :hFE=600(Min)@IC=2A,VCE=2V •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Igniterapplications •Highvoltageswitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1410

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=250V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=4A •HighDCCurrentGain:hFE=2000(Min)@IC=2A,VCE=2V APPLICATIONS •Igniterapplications •Highvoltageswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1410A

NPNTRIPLEDIFFUSEDTYPE(IGNITER,HIGHVOLTAGESWITCHINGAPPLICATIONS)

HighVoltageSwitchingApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=2A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1411

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·Lowsaturationvoltage ·Complementaryto2SB1018 APPLICATIONS ·Poweramplifierapplications ·Highcurrentswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1411

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·Lowsaturationvoltage ·Complementaryto2SB1018 APPLICATIONS ·Poweramplifierapplications ·Highcurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1411A

NPNTRIPLEDIFFUSEDTYPE(HIGHCURRENTSWITCHING,POWERAMPLIFIERAPPLICATIONS)

High-CurrentSwitchingApplications PowerAmplifierApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)atIC=4A •Complementaryto2SB1018A

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1412

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage:VCE(sat)=0.4V(Max)@IC=4A •Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) •ComplementtoType2SB1019 APPLICATIONS •Highcurrentswitchingapplications. •Poweramplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1413

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·Complementtotype2SB1023 ·DARLINGTON APPLICATIONS ·Poweramplifierandswitchingapplications ·Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1413

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·Complementtotype2SB1023 ·DARLINGTON APPLICATIONS ·Poweramplifierandswitchingapplications ·Hammerdrive,pulsemotordriveapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1414

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·Complementtotype2SB1024 ·DARLINGTON APPLICATIONS ·Poweramplifierandswitchingapplications ·Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1414

RF&MICROWAVETRANSISTORS800-900MHzAPPLICATIONS

DESCRIPTION TheSD1414isa12.5VClassCepitaxialsiliconNPNplanartransistordesignedforamplifierapplicationsinthe806-866MHzfrequencyrange.Internalinputmatchingandcommonbaseconfigurationassureoptimumgainandefficiencyacrosstheentirefrequencyband.TheSD1414withst

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
2SD1414

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·Complementtotype2SB1024 ·DARLINGTON APPLICATIONS ·Poweramplifierandswitchingapplications ·Hammerdrive,pulsemotordriveapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1415

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Lowsaturationvoltage •Complementtotype2SB1020 •DARLINGTON APPLICATIONS •Highpowerswitchingapplications •Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1415

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fapackage •HighDCcurrentgain •Lowsaturationvoltage •Complementtotype2SB1020 •DARLINGTON APPLICATIONS •Highpowerswitchingapplications •Hammerdrive,pulsemotordriveapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1415A

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·HighDCcurrentgain ·Lowsaturationvoltage ·DARLINGTON APPLICATIONS ·Highpowerswitchingapplications ·Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1415A

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·HighDCcurrentgain ·Lowsaturationvoltage ·DARLINGTON APPLICATIONS ·Highpowerswitchingapplications ·Hammerdrive,pulsemotordriveapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1415A

NPNTRIPLEDIFFUSEDTYPE(HIGHPOWERSWITCHING,HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1415A

TOSHIBATransistorSiliconNPNTripleDiffusedType(Darlington)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1415AF

TOSHIBATransistorSiliconNPNTripleDiffusedType(Darlington)

High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications •HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1416

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=3A •HighDCCurrentGain:hFE=2000(Min)@IC=3A,VCE=3V •ComplementtoType2SB1021 APPLICATIONS •Hammerdriver,pulsemotordriveapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1417

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·Complementtotype2SB1022 ·DARLINGTON APPLICATIONS ·Poweramplifierandswitchingapplications ·Hammerdrive,pulsemotordriveapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SD1417

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fapackage ·HighDCcurrentgain ·Lowsaturationvoltage ·Complementtotype2SB1022 ·DARLINGTON APPLICATIONS ·Poweramplifierandswitchingapplications ·Hammerdrive,pulsemotordriveapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SD1417

2SD1417

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SD1418

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB1025

HitachiHitachi, Ltd.

日立公司

Hitachi
2SD1418

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB1025

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1418

SiliconNPNEpitaxial

■Features ●Lowfrequencypoweramplifier ●Complementaryto2SB1025

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1418DATR-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB1025

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1418DBTR-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB1025

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1418DCTR-E

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB1025

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1419

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB1026

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SD1419

NPNSiliconepitaxialTransistor

Features ●Lowfrequencypoweramplifier

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SD1419

SiliconNPNEpitaxial

Application •Lowfrequencypoweramplifier •Complementarypairwith2SB1026

HitachiHitachi, Ltd.

日立公司

Hitachi

2SD14产品属性

  • 类型

    描述

  • 型号

    2SD14

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3PB 1500V 2.5A 80W BCE

2SD14供应商更多...

更新时间：2024-5-12 16:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市惊羽科技有限公司
2SD1444A
MAT
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市向鸿伟业电子有限公司
2SD1444
95+
415
百分百进口原装库存-价惠货真
询价
深圳市特顺芯科技有限公司
2SD1444
TO-220FA
10000
全新
询价
深圳市芯祺盛科技有限公司
2SD1444
MAT
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
深圳市宏捷佳电子科技有限公司
2SD1444
PANASONIC
23+
TO-TO-220F
33500
全新原装真实库存含13点增值税票!
询价
深圳市智创诚芯电子科技有限公司
2SD1444
MAT
22+
TO-220F
25000
原装现货,价格优惠,假一罚十
询价
深圳市创新迹电子有限公司
2SD1444
PANASONIC/松下
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
深圳市国宇半导体科技有限公司
2SD1444
PANASONIC/松下
23+
TO-220F
10000
公司只做原装正品
询价
深圳市威雅利发展有限公司
2SD1444
MAT
17+
TO-220F
10800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市河锋鑫科技有限公司
2SD1444
MAT
22+
TO-220
6000
十年配单,只做原装
询价

2SD14芯片相关品牌

  • EON
  • Fairchild
  • FRONTIER
  • GigaDevice
  • JAUCH
  • KEC
  • KEYSIGHT
  • LIGITEK
  • MINI
  • OMRON
  • QUALTEK
  • SENSITRON

2SD14规格书下载地址

2SD14参数引脚图相关

2SD14数据表相关新闻

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