NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR CTV HORIZONTAL DEFLECTION OUTPUT

FOR CTV HORIZONTAL DEFLECTION OUTPUT Features : • High breakdown voltage and high reliability • High switching speed • Capable of being mounted easily due one-point fixing type plastic mold package

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed APPLICATIONS • Designed for color TV horizontal output applications.

NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR FOR CTV HORIZONTAL DEFLECTION OUTPUT

FOR CTV HORIZONTAL DEFLECTION OUTPUT Features: • High breakdown voltage and high reliability • High switching speed • Capable of being mounted easily due to one-point fixing type plastic mold package

NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) * High Collector-Base Voltage(VCBO=1500V) * High Speed Switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High speed switching • High voltage,high reliability • Wide area of safe operation APPLICATIONS • For CRT horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High speed switching • High voltage,high reliability • Wide area of safe operation APPLICATIONS • For CRT horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High speed switching • High voltage, high reliability • Wide area of safe operation APPLICATIONS • For CRT horizontal output applications

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current Capability • High Collector Power Dissipation Capability • Built-in Damper Diode APPLICATIONS • B/W TV horizontal deflection output applications. • High voltage switching applications.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation : PC=25W@TC=25
·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT ● Complement to 2SB1016

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SB1016 APPLICATIONS • Power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SB1016 APPLICATIONS • Power amplifier applications

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 APPLICATIONS ·Designed for power amplifier applications.

SILICON NPN TRIPLE DIFFUSED TYPE

POWER AMPLIFIER APPLICATIONS.

SILICON NPN DARLINGTON TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS • Igniter applications • High volitage switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • Igniter applications • High volitage switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • Igniter applications • High volitage switching applications

NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) • High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Igniter applications • High voltage switching

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) • Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS • Igniter applications • High voltage switching applications

NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications

NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

High-Current Switching Applications Power Amplifier Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) • Complement to Type 2SB1019 APPLICATIONS • High current switching applications. • Power amplifier applications.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1023 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS

DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806 - 866 MHz frequency range. Internal input matching and common base configuration assure optimum gain and efficiency across the entire frequency band. The SD1414 withst

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SB1020 • DARLINGTON APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SB1020 • DARLINGTON APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= 3 V, IC= 3 A) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 3 A)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A • High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V • Complement to Type 2SB1021 APPLICATIONS • Hammer driver,pulse motor drive applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

2SD1417

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Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1025

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1025

Silicon NPN Epitaxial

■ Features ● Low frequency power amplifier ● Complementary to 2SB1025

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1025

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1025

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1025

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1026

NPN Silicon epitaxial Transistor

Features ● Low frequency power amplifier

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1026