NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) • High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Igniter applications • High voltage switching

Power transistor for low frequency applications

Feature：Darlington / Built-in damper diode\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 6 A \nCollector-emitter voltage VCEO 400 V ;

High Voltage Switching Applications

文件：154.34 Kbytes Page：5 Pages

High Voltage Switching Applications

文件：154.34 Kbytes Page：5 Pages

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • Igniter applications • High volitage switching applications

SILICON NPN DARLINGTON TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • Igniter applications • High volitage switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS • Igniter applications • High volitage switching applications