MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. • M type

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

Large-Current Switching Applications

Large-Current Switching Applications Features • FBET and MBIT processed (Original process of SANYO). • Low saturation voltage. • Large current capacity and wide ASO. Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

Large-Current Switching Applications

Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring

Large-Current Switching Applications

Features • FBET and MBIT processed • Low saturation voltage • Large current capacity and wide SOA Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Wide area of safe operation • High DC current gain • Darlington APPLICATIONS • Power regulator for line operated TV

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Wide area of safe operation • High DC current gain • Darlington APPLICATIONS • Power regulator for line operated TV

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

• Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

• Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

Silicon NPN Epitaxial, Darlington

Application • Low frequency power amplifier • Complementary pair with 2SA1193(K)

NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 100V(Min) APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SB0987 (2SB987) ■Features ● High collector to emitter voltage VCEO. ● Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier.

30V/12A High-Speed Switching Applications

30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ·High-speed switching app

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Large current capacity. ·Complement to type 2SB903 APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ·High-speed switching app

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Low collector-to-emitter saturation voltage : VCE(sat)= 0.4V(max.) • Large current capacity. • Complement to type 2SB904 APPLICATIONS • Large current switching of relay drivers, high-speed inverters, converters.

30V/20A High-Speed Switching Applications

30V/12A High-Speed Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Large current switching of relay drivers, high-speed inverters, converters.

SI NPN PLANAR DARLINGTON

Si NPN Planar Darlington Medium Speed Power Switching

SI NPN PLANAR DARLINGTON

Si NPN Planar Darlington Medium Speed Power Switching Features ● Built-in 60 V zener diode between C and B ● Uniformity in breakdown voltage ● Large energy handling capability : Es/b = 25mJ (min) ● High speed switching either at high or low temperature environments

SI NPN PLANAR DARLINGTON

Si NPN Planar Darlington Medium Speed Power Switching

NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Complementary to 2SB905

Silicon NPN Epitaxial Transistor

Features Power Amplifier Applications

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)

Audio Frequency Power Amplifier Application • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A) • Complementary to 2SB907.

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Complementary to 2SB908.

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter