2SD1222晶体管资料

  • 2SD1222别名:2SD1222三极管、2SD1222晶体管、2SD1222晶体三极管

  • 2SD1222生产厂家:日本东芝公司

  • 2SD1222制作材料:Si-N+Darl+Di

  • 2SD1222性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD1222封装形式:直插封装

  • 2SD1222极限工作电压:60V

  • 2SD1222最大电流允许值:3A

  • 2SD1222最大工作频率:<1MHZ或未知

  • 2SD1222引脚数:3

  • 2SD1222最大耗散功率:15W

  • 2SD1222放大倍数:β=5000

  • 2SD1222图片代号:B-10

  • 2SD1222vtest:60

  • 2SD1222htest:999900

  • 2SD1222atest:3

  • 2SD1222wtest:15

  • 2SD1222代换 2SD1222用什么型号代替:2SD1520,2SD1749,2SD1817,2SD1955,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD1222

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SD1222

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1222

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

2SD1222

NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A) • Complementary to 2SB907.

TOSHIBA

东芝

2SD1222

Switching Applications

文件:162.29 Kbytes Page:5 Pages

TOSHIBA

东芝

2SD1222

Power transistor for low frequency applications

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·DC Current Gain- : hFE= 2000(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Switching Applications

文件:162.29 Kbytes Page:5 Pages

TOSHIBA

东芝

2SD1222产品属性

  • 类型

    描述

  • 型号

    2SD1222

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR SC-6460V 3A 1W BCE

更新时间:2025-10-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
795
优势代理渠道,原装正品,可全系列订货开增值税票
ROHM
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
TOSHIBA
2023+
TO-252
50000
原装现货
ROHM/罗姆
20+
TO-252
67500
原装优势主营型号-可开原型号增税票
TOSHIBA/东芝
22+
SOT252
100000
代理渠道/只做原装/可含税
TOSH
05+/04
SOT252
6790
全新原装进口自己库存优势
TOSHIBA
24+
SOT-252
5000
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA/东芝
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
TOSHIBA/东芝
96+
TO-252
29350
TOSHIBA/东芝
23+
TO-252
30000
全新原装现货,价格优势

2SD1222数据表相关新闻