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2SC60晶体管资料

2SC60别名：2SC60三极管、2SC60晶体管、2SC60晶体三极管
2SC60生产厂家：日本三洋公司
2SC60制作材料：Ge-NPN
2SC60性质：通用型（Uni）
2SC60封装形式：直插封装
2SC60极限工作电压：20V
2SC60最大电流允许值：0.02A
2SC60最大工作频率：<1MHZ或未知
2SC60引脚数：3
2SC60最大耗散功率：0.1W
2SC60放大倍数：
2SC60图片代号：C-47
2SC60vtest：20
2SC60htest：999900
2SC60atest：0.02
2SC60wtest：0.1

2SC60代换 2SC60用什么型号代替：AC127,ASY28,ASY29,2N1304,3BG1,

2SC60价格

参考价格：￥14.9765

型号：2SC6011 品牌：Sanken 备注：这里有2SC60多少钱，2025年最近7天走势，今日出价，今日竞价，2SC60批发/采购报价，2SC60行情走势销售排行榜，2SC60报价。

型号	功能描述	生产厂家企业	LOGO
2SC6000	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC6000	High Speed Switching Applications DC-DC Converter Applications High Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ)	TOSHIBA 东芝	TOSHIBA
2SC6010	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC6010	Silicon NPN Triple Diffused Type High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tf = 0.24μs (max) (IC = 0.3A)	TOSHIBA 东芝	TOSHIBA
2SC6011	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	ALLEGRO	ALLEGRO
2SC6011	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	Sanken 三垦	Sanken
2SC6011	isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope	ISC 无锡固电	ISC
2SC6011	Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Good Linearity of (IFE • Complement to Type 2SA2151 APPLICATIONS • Designed for audio and general purpose applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SC6011A	isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope	ISC 无锡固电	ISC
2SC6011A	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	Sanken 三垦	Sanken
2SC6011A	Audio Amplification Transistor Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit	ALLEGRO	ALLEGRO
2SC6012	Silicon NPN triple diffusion mesa type Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area	Panasonic 松下	Panasonic
2SC6013	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.	SANYO 三洋	SANYO
2SC6014	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.	SANYO 三洋	SANYO
2SC6015	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.	SANYO 三洋	SANYO
2SC6016	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash.	SANYO 三洋	SANYO
2SC6017	PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.	SANYO 三洋	SANYO
2SC6017	Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SC6017	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC6017	isc Silicon NPN Power Transistor DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA2169 APPLICATIONS • relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC6017	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC6017-251	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC6017-252	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance ·Large current capacitance ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,lamp drivers,motor drivers	ISC 无锡固电	ISC
2SC6017-E	Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SC6017-TL-E	Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers	ONSEMI 安森美半导体	ONSEMI
2SC6019	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor	SANYO 三洋	SANYO
2SC6019	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6019	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6019-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6019-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6020	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv	SANYO 三洋	SANYO
2SC6020	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6020	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6020-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6020-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6021	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6021	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6021	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv	SANYO 三洋	SANYO
2SC6021-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6021-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6022	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6022	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6022	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv	SANYO 三洋	SANYO
2SC6022-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6022-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SC6023	NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : \|S21e\|2=14dB typ (f=2GHz).	SANYO 三洋	SANYO
2SC6023	UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : \|S21e\|2=14dB typ (f=2GHz).	SANYO 三洋	SANYO
2SC6023-TR-E	UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : \|S21e\|2=14dB typ (f=2GHz).	SANYO 三洋	SANYO
2SC6024	UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : \|S21e\|2=12.5dB typ (f=2GHz). • Ultraminiature and thin flat leadless pack	SANYO 三洋	SANYO
2SC6025	NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : \|S21e\|2=12.5dB typ (f=2GHz).	SANYO 三洋	SANYO
2SC6026	Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 100 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SA2154 • Lead (Pb) free	TOSHIBA 东芝	TOSHIBA
2SC6026CT	General Purpose Amplifier Applications General Purpose Amplifier Applications • High voltage and high current : VCEO = 50V, IC = 100mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154CT	TOSHIBA 东芝	TOSHIBA
2SC6026MFV	General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV	TOSHIBA 东芝	TOSHIBA
2SC6026MFV	General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV	TOSHIBA 东芝	TOSHIBA
2SC6026MFV	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV	TOSHIBA 东芝	TOSHIBA
2SC6026MFV-GR	General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV	TOSHIBA 东芝	TOSHIBA
2SC6026MFV-Y	General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV	TOSHIBA 东芝	TOSHIBA
2SC6033	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC6033	TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications • High DC current gain: hFE = 250 to 400 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.)	TOSHIBA 东芝	TOSHIBA
2SC6034	Silicon NPN Triple Diffused Type High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.24 μs (max) (IC = 0.3 A)	TOSHIBA 东芝	TOSHIBA

2SC60产品属性

类型
描述
型号
2SC60
制造商
TOSHIBA
制造商全称
Toshiba Semiconductor
功能描述
High Speed Switching Applications DC-DC Converter Applications

2SC60供应商更多...

更新时间：2025-12-25 13:36:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市中联芯电子有限公司	2SC6011A/2SA2151A	SANKEN/国产	24+	TO-3PN	7800	全新原厂原装正品现货,低价出售,实单可谈	询价
深圳市博中泰实业有限公司	2SC6011A2SC6011功率三极管	三肯	24+	TO3P	60000	全新原装现货	询价
深圳市得捷芯城科技有限公司	2SC6011A2SC6011	三肯	24+	NA/	13138	优势代理渠道,原装正品,可全系列订货开增值税票	询价
中天科工半导体（深圳）有限公司	2SC6011A	SANKEN/三垦	25+	TO-3P	45000	SANKEN/三垦全新现货2SC6011A即刻询购立享优惠#长期有排单订	询价
现代芯城（深圳）科技有限公司	2SC6011A		24+	N/A	64000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市赛美科科技有限公司	2SC6011A-P	SANKEN		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市明嘉莱科技有限公司	2SC6011A-P	SANKEN	21+	明嘉莱只做原装正品现货	2510000	TO3P-3L	询价
深圳市百诺芯科技有限公司	2SC6011A-Y	SEIKO/精工	23+	NA	2860	原装正品代理渠道价格优势	询价
艾睿（深圳）半导体有限公司	2SC6011AY	SANKEN	2447	SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	2SC6011A2SC6011功率三极管	三肯	23+	TO3P	50000	全新原装正品现货,支持订货	询价

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