位置：首页 > IC中文资料第8386页 > 2SC6020
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC6020 | NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv | SANYO 三洋 |   | |
2SC6020 | Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | |
2SC6020 | Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | |
2SC6020 | NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications | ONSEMI 安森美半导体 | | |
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |
2SC6020产品属性
- 类型
描述
- 型号
2SC6020
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
NPN Epitaxial Planar Silicon Transistor DC/DC Converter Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTG |
23+ |
251-252 |
388000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
2SC6020规格书下载地址
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2018-12-19
DdatasheetPDF页码索引
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