丝印代码：C6000；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High Speed Switching Applications DC-DC Converter Applications

High Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ)

Power transistor for high-speed switching applications

Application Scope：DC/DC converters / High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 7 A \nCollector Current ICP 10 A \nCollector power dissipation PC 20 W \nCollector-emitter voltage VCEO 50 V \nCollector-emitter voltage VCEX 120 V ;