Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 ​​​​​​​ = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 230V 15A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Good Linearity of (IFE • Complement to Type 2SA2151 APPLICATIONS • Designed for audio and general purpose applications

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 ​​​​​​​ = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit