型号 功能描述 生产厂家 企业 LOGO 操作
2SC6026MFV-GR

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 100 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SA2154 • Lead (Pb) free

TOSHIBA

东芝

General Purpose Amplifier Applications

General Purpose Amplifier Applications • High voltage and high current : VCEO = 50V, IC = 100mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154CT

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

2SC6026MFV-GR产品属性

  • 类型

    描述

  • 型号

    2SC6026MFV-GR

  • 功能描述

    两极晶体管 - BJT INCORRECT MOUSER P/N

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-11-21 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
8000
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA/东芝
25+
SOT923
54648
百分百原装现货 实单必成
TOSHIBA/东芝
24+
SOT523
990000
明嘉莱只做原装正品现货
TOSHIBA
24+/25+
8000
原装正品现货库存价优
TOSHIBA
14+
SOT523
6670
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SOT-523
23+
NA
15659
振宏微专业只做正品,假一罚百!
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOSHIBA
25+23+
SOT523
40827
绝对原装正品现货,全新深圳原装进口现货
TOSHIBA
24+
SOT523
23290
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA/东芝
2450+
SOT423-3
6540
只做原装正品现货或订货!终端客户免费申请样品!

2SC6026MFV-GR数据表相关新闻