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2SC575晶体管资料
2SC575别名：2SC575三极管、2SC575晶体管、2SC575晶体三极管
2SC575生产厂家：日本松下公司
2SC575制作材料：Si-NPN
2SC575性质：甚高频 （VHF）_TR_输出极 （E）
2SC575封装形式：直插封装
2SC575极限工作电压：80V
2SC575最大电流允许值：1A
2SC575最大工作频率：210MHZ
2SC575引脚数：3
2SC575最大耗散功率：5W
2SC575放大倍数：
2SC575图片代号：C-40
2SC575vtest：80
2SC575htest：210000000
- 2SC575atest：1
2SC575wtest：5
2SC575代换 2SC575用什么型号代替：BFW47,BFS23,BLY33,BLY60,2N3553,3DA106C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package | RENESAS 瑞萨 |   | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package | RENESAS 瑞萨 | | ||
丝印代码：R54；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliabil | CEL | | ||
丝印代码：R54；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
丝印代码：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol | NEC 瑞萨 | | ||
丝印代码：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of | RENESAS 瑞萨 | | ||
丝印代码：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
Small Signal Silicon Bipolars NPN Silicon Medium Power Transistor (Same as NE678M04) | RENESAS 瑞萨 | | ||
丝印代码：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
丝印代码：R57；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: | RENESAS 瑞萨 | | ||
Small Signal Silicon Bipolars NPN Silicon Medium Power Transistor (Same as NE664M04) | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | NEC 瑞萨 | | ||
丝印代码：R57；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: | RENESAS 瑞萨 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.) | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial VHF / UHF Wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial VHF / UHF Wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 10.6 GHz typ. • High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz • Very low distortion Output IP3 (800 MHz) = 36 dBm typ. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD 文件：216.98 Kbytes Page：18 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SC-82A，SOT-343 包装：托盘 描述：RF TRANS NPN 6V 15GHZ SOT343 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD 文件：217.67 Kbytes Page：18 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SOT-343F 包装：托盘 描述：RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD 文件：225.54 Kbytes Page：22 Pages | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD 文件：224.35 Kbytes Page：22 Pages | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) 文件：222.69 Kbytes Page：15 Pages | RENESAS 瑞萨 | | ||
High-Speed Switching Applications 文件：136.4 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
High-Speed Switching Applications 文件：136.4 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial 文件：87.24 Kbytes Page：10 Pages | HITACHI-METALS 日立金属 | |
2SC575产品属性
- 类型
描述
- 型号
2SC575
- 制造商
Renesas Electronics Corporation
- 功能描述
Cut Tape
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
TOSHIBA/东芝 |
2511 |
SOT-23 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
TOSHIBA/东芝 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOSHIBA |
20+ |
SOT23 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
TOSHIBA/东芝 |
2450+ |
SOT23FL |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOSHIBA/东芝 |
23+ |
SOT-23 |
6000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TOSHIBA |
19+ |
SOT23 |
20000 |
14000 |
|||
TOSHIBA/东芝 |
25+ |
SOT23-3 |
880000 |
明嘉莱只做原装正品现货 |
2SC575芯片相关品牌
2SC575规格书下载地址
2SC575参数引脚图相关
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2SC575数据表相关新闻
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2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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