位置：首页 > IC中文资料第1756页 > 2SC575
2SC575晶体管资料
2SC575别名：2SC575三极管、2SC575晶体管、2SC575晶体三极管
2SC575生产厂家：日本松下公司
2SC575制作材料：Si-NPN
2SC575性质：甚高频 （VHF）_TR_输出极 （E）
2SC575封装形式：直插封装
2SC575极限工作电压：80V
2SC575最大电流允许值：1A
2SC575最大工作频率：210MHZ
2SC575引脚数：3
2SC575最大耗散功率：5W
2SC575放大倍数：
2SC575图片代号：C-40
2SC575vtest：80
2SC575htest：210000000
- 2SC575atest：1
2SC575wtest：5
2SC575代换 2SC575用什么型号代替：BFW47,BFS23,BLY33,BLY60,2N3553,3DA106C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package | RENESAS 瑞萨 |   | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliabil | CEL | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: | RENESAS 瑞萨 | | ||
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.) | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial VHF / UHF Wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial VHF / UHF Wide band amplifier Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 10.6 GHz typ. • High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz • Very low distortion Output IP3 (800 MHz) = 36 dBm typ. | HitachiHitachi Semiconductor 日立日立公司 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD 文件：216.98 Kbytes Page：18 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SC-82A，SOT-343 包装：托盘 描述：RF TRANS NPN 6V 15GHZ SOT343 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD 文件：217.67 Kbytes Page：18 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SOT-343F 包装：托盘 描述：RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD 文件：225.54 Kbytes Page：22 Pages | RENESAS 瑞萨 | | ||
Small Signal Silicon Bipolars | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD 文件：224.35 Kbytes Page：22 Pages | RENESAS 瑞萨 | | ||
Small Signal Silicon Bipolars | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) 文件：222.69 Kbytes Page：15 Pages | RENESAS 瑞萨 | | ||
High-Speed Switching Applications 文件：136.4 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
High-Speed Switching Applications 文件：136.4 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial 文件：87.24 Kbytes Page：10 Pages | HITACHI-METALS 日立金属 | |
2SC575产品属性
- 类型
描述
- 型号
2SC575
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
SOT343 |
30000000 |
原装进口中国百强元器件分销企业 专注RENESAS十年 公司大量RENESAS现货 欢迎您的咨询 百年不变 服务至上 |
||||
NEC |
25+ |
SOT343 |
30000 |
代理全新原装现货,价格优势 |
|||
NEC |
24+ |
SOT-343 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
25+ |
SOT343 |
12524 |
RENESAS/瑞萨原装特价2SC5754-T2即刻询购立享优惠#长期有货 |
|||
NEC |
2450+ |
SOT343-4 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
RENESAS |
2016+ |
SOT-343 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
25+23+ |
SOT343 |
54451 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
24+ |
SOT-343 |
30000 |
||||
RENESAS |
26+ |
SOT343 |
360000 |
进口原装现货 |
|||
NEC |
2023+ |
SMD |
2655 |
一级代理优势现货,全新正品直营店 |
2SC575芯片相关品牌
2SC575规格书下载地址
2SC575参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SC591
- 2SC590
- 2SC59
- 2SC58A
- 2SC589
- 2SC588
- 2SC587A
- 2SC587
- 2SC586
- 2SC585
- 2SC584
- 2SC583
- 2SC582
- 2SC581
- 2SC580
- 2SC58
- 2SC579
- 2SC5781
- 2SC578
- 2SC5779
- 2SC5778
- 2SC5777
- 2SC5776
- 2SC5775
- 2SC5774
- 2SC5773
- 2SC5772
- 2SC577
- 2SC5765
- 2SC5764
- 2SC5763
- 2SC5761
- 2SC576
- 2SC5759
- 2SC5758
- 2SC5757
- 2SC5755
- 2SC5754
- 2SC5752
- 2SC5751
- 2SC5748
- 2SC5746
- 2SC5745
- 2SC574
- 2SC5739
- 2SC5738
- 2SC5730
- 2SC573
- 2SC5729
- 2SC5728
- 2SC5727
- 2SC5726
- 2SC5725
- 2SC5722
- 2SC5720
- 2SC572
- 2SC5717
- 2SC5716
- 2SC5714
- 2SC5713
- 2SC5712
- 2SC5710
- 2SC571
- 2SC5709
- 2SC570
- 2SC57
- 2SC569
- 2SC568
- 2SC567
- 2SC566
- 2SC565
- 2SC564
- 2SC563(A)
- 2SC562
- 2SC561
- 2SC560
- 2SC56
- 2SC559
- 2SC558
- 2SC557
2SC575数据表相关新闻
2SD1616AG-TO92B-G-TG_UTC代理商
2SD1616AG-TO92B-G-TG_UTC代理商
2023-2-272SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
2023-1-302SC5299
2SC5299，全新原装当天发货或门市自取0755-82732291.
2020-4-242SC5826中文资料库
2SC5826中文资料库
2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
