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2SC575晶体管资料
2SC575别名:2SC575三极管、2SC575晶体管、2SC575晶体三极管
2SC575生产厂家:日本松下公司
2SC575制作材料:Si-NPN
2SC575性质:甚高频 (VHF)_TR_输出极 (E)
2SC575封装形式:直插封装
2SC575极限工作电压:80V
2SC575最大电流允许值:1A
2SC575最大工作频率:210MHZ
2SC575引脚数:3
2SC575最大耗散功率:5W
2SC575放大倍数:
2SC575图片代号:C-40
2SC575vtest:80
2SC575htest:210000000
- 2SC575atest:1
2SC575wtest:5
2SC575代换 2SC575用什么型号代替:BFW47,BFS23,BLY33,BLY60,2N3553,3DA106C,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgoldelectrodes •4-pinsuperminimoldpackage | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgoldelectrodes •4-pinsuperminimoldpackage | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabil | CEL California Eastern Labs | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseof | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol | CEL California Eastern Labs | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseof | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency: | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η | CEL California Eastern Labs | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency: | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-SpeedSwitchingApplicationsDC-DCConverterApplicationsStrobeApplications High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.2A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=25ns(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialVHF/UHFwidebandamplifier Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxialVHF/UHFwidebandamplifier Features •Supercompactpackage:MFPAK(1.4x0.8x0.59mm) | HitachiHitachi Semiconductor 日立日立公司 | |||
SiliconNPNEpitaxialVHF/UHFwidebandamplifier Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxialVHF/UHFWidebandamplifier Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxialVHF/UHFWidebandamplifier Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
SiliconNPNEpitaxialUHF/VHFwidebandamplifier Features •HighgainbandwidthproductfT=10.6GHztyp. •Highpowergainandlownoisefigure;PG=11.5Btyp.,NF=1.1dBtyp.atf=900MHz •VerylowdistortionOutputIP3(800MHz)=36dBmtyp. | HitachiHitachi Semiconductor 日立日立公司 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(30mW)4-PINSUPERMINIMOLD 文件:216.98 Kbytes Page:18 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(30mW)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD 文件:217.67 Kbytes Page:18 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD 文件:225.54 Kbytes Page:22 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD 文件:224.35 Kbytes Page:22 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) 文件:222.69 Kbytes Page:15 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
High-SpeedSwitchingApplications 文件:136.4 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
High-SpeedSwitchingApplications 文件:136.4 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxial 文件:87.24 Kbytes Page:10 Pages | HITACHI-METALSHitachi Metals, Ltd 日立金属日立金属有限公司 |
2SC575产品属性
- 类型
描述
- 型号
2SC575
- 制造商
Renesas Electronics Corporation
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
2024 |
SOT-23SC-59 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
TOSHIBA |
20+ |
SOT23 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA |
24+ |
SOT-23 |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TOSHIBA/东芝 |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
|||
TOSHIBA |
1922+ |
SOT-23 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
国产 |
|||
TOSHIBA/东芝 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
TOSHIBA |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
TOSHIBA/东芝 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
TOSHIBA/东芝 |
22+ |
SOT23 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
2SC575规格书下载地址
2SC575参数引脚图相关
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2SC575数据表相关新闻
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2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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