2SC575晶体管资料

  • 2SC575别名:2SC575三极管、2SC575晶体管、2SC575晶体三极管

  • 2SC575生产厂家:日本松下公司

  • 2SC575制作材料:Si-NPN

  • 2SC575性质:甚高频 (VHF)_TR_输出极 (E)

  • 2SC575封装形式:直插封装

  • 2SC575极限工作电压:80V

  • 2SC575最大电流允许值:1A

  • 2SC575最大工作频率:210MHZ

  • 2SC575引脚数:3

  • 2SC575最大耗散功率:5W

  • 2SC575放大倍数

  • 2SC575图片代号:C-40

  • 2SC575vtest:80

  • 2SC575htest:210000000

  • 2SC575atest:1

  • 2SC575wtest:5

  • 2SC575代换 2SC575用什么型号代替:BFW47,BFS23,BLY33,BLY60,2N3553,3DA106C,

型号 功能描述 生产厂家&企业 LOGO 操作

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION

FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgoldelectrodes •4-pinsuperminimoldpackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION

FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgoldelectrodes •4-pinsuperminimoldpackage

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliab

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MEDIUMOUTPUTPOWERAMPLIFICATION(30mW)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabil

CEL

California Eastern Labs

CEL

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliab

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseof

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol

CEL

California Eastern Labs

CEL

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseof

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliab

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliab

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η

CEL

California Eastern Labs

CEL

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-SpeedSwitchingApplicationsDC-DCConverterApplicationsStrobeApplications

High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.2A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=25ns(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage:MFPAK(1.4x0.8x0.59mm)

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFWidebandamplifier

Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFWidebandamplifier

Features Supercompactpackage:MFPAK(1.4x0.8x0.59mm)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialUHF/VHFwidebandamplifier

Features •HighgainbandwidthproductfT=10.6GHztyp. •Highpowergainandlownoisefigure;PG=11.5Btyp.,NF=1.1dBtyp.atf=900MHz •VerylowdistortionOutputIP3(800MHz)=36dBmtyp.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(30mW)4-PINSUPERMINIMOLD

文件:216.98 Kbytes Page:18 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(30mW)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD

文件:217.67 Kbytes Page:18 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD

文件:225.54 Kbytes Page:22 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD

文件:224.35 Kbytes Page:22 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(0.4W)FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04)

文件:222.69 Kbytes Page:15 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

High-SpeedSwitchingApplications

文件:136.4 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-SpeedSwitchingApplications

文件:136.4 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxial

文件:87.24 Kbytes Page:10 Pages

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HITACHI-METALS

2SC575产品属性

  • 类型

    描述

  • 型号

    2SC575

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-7-5 10:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2024
SOT-23SC-59
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
TOSHIBA
20+
SOT23
32970
原装优势主营型号-可开原型号增税票
TOSHIBA
24+
SOT-23
4000
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA/东芝
20+
SOT-23
120000
原装正品 可含税交易
TOSHIBA
1922+
SOT-23
35689
原装进口现货库存专业工厂研究所配单供货
NK/南科功率
2025+
SOT-23
986966
国产
TOSHIBA/东芝
23+
SOT-23
50000
全新原装正品现货,支持订货
TOSHIBA
23+
SOT-23
50000
全新原装正品现货,支持订货
TOSHIBA/东芝
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA/东芝
22+
SOT23
12000
只做原装、原厂优势渠道、假一赔十

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  • TOCOS

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