位置：首页 > IC中文资料第1756页 > 2SC5754
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC5754 | NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | CEL |   | |
2SC5754 | 丝印代码：R57；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: | RENESAS 瑞萨 | | |
2SC5754 | NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | NEC 瑞萨 | | |
2SC5754 | Small Signal Silicon Bipolars NPN Silicon Medium Power Transistor (Same as NE664M04) | RENESAS 瑞萨 | | |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η | NEC 瑞萨 | | ||
丝印代码：R57；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) 文件：222.69 Kbytes Page：15 Pages | RENESAS 瑞萨 | | ||
封装/外壳：SOT-343F 包装：托盘 描述：RF TRANS NPN 5V 20GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | | ||
封装/外壳：SOT-343F 包装：托盘 描述：RF TRANS NPN 5V 20GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频 | CEL | |
2SC5754产品属性
- 类型
描述
- 型号
2SC5754
- 制造商
Renesas Electronics Corporation
- 功能描述
RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2450+ |
SOT343-4 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
NEC |
25+23+ |
SOT343 |
54451 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
25+ |
SOT343 |
30000 |
代理全新原装现货,价格优势 |
|||
NEC |
24+ |
SOT-343 |
30000 |
||||
NEC |
24+ |
SOT-343 |
9700 |
绝对原装正品现货假一罚十 |
|||
NEC |
22+ |
SOT343 |
20000 |
公司只有原装 品质保证 |
|||
NEC |
25+ |
SOT343 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
RENESAS |
2020+ |
SOT343 |
3015 |
全新 发货1-2天 |
|||
NEC |
24+ |
SOT343 |
33487 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
26+ |
SOT343 |
360000 |
进口原装现货 |
2SC5754规格书下载地址
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DdatasheetPDF页码索引
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