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型号 功能描述 生产厂家 企业 LOGO 操作
2SC5751

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliabil

CEL

2SC5751

丝印代码:R54;NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab

RENESAS

瑞萨

2SC5751

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

CEL

丝印代码:R54;NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

文件:217.67 Kbytes Page:18 Pages

RENESAS

瑞萨

封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

2SC5751产品属性

  • 类型

    描述

  • 型号

    2SC5751

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Cut Tape

更新时间:2026-5-14 17:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
SOT343
5800
RENESAS/专注原装
24+
SOT-343
16900
原装正品现货支持实单
RENESAS
26+
4-PIN
360000
进口原装现货
NEC
2450+
SOT-343
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
25+23+
SOT343
33490
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
23+
SOT343
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
NEC
22+
SOT343-4
8000
原装正品支持实单
TOSHIBA
24+
30000
RENESAS
25+
4-PIN
30000
代理全新原装现货,价格优势
NEC
22+
SOT343
20000
公司只有原装 品质保证

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