型号 功能描述 生产厂家 企业 LOGO 操作
2SC5751

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliabil

CEL

2SC5751

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab

RENESAS

瑞萨

2SC5751

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

CEL

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

文件:217.67 Kbytes Page:18 Pages

RENESAS

瑞萨

封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 6V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

2SC5751产品属性

  • 类型

    描述

  • 型号

    2SC5751

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
23+
SOT343
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
RENESAS/瑞萨
24+
NA/
48000
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
22+
SOT343
20000
公司只有原装 品质保证
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
NEC
23+
SOT343
5800
RENESAS
25+
4-PIN
30000
代理全新原装现货,价格优势
NEC
2450+
SOT-343
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
25+23+
SOT343
33490
绝对原装正品全新进口深圳现货
NEC
22+
SOT343-4
8000
原装正品支持实单
TOSHIBA
24+
30000

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