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2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol

CEL

2SC5752

丝印代码:R55;NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of

RENESAS

瑞萨

2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol

NEC

瑞萨

2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol

NEC

瑞萨

丝印代码:R55;NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

文件:225.54 Kbytes Page:22 Pages

RENESAS

瑞萨

封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT343 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT343 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

更新时间:2026-5-15 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
23+
SOT343
50000
全新原装正品现货,支持订货
NEC
25+23+
SOT343
37922
绝对原装正品全新进口深圳现货
NEC
SOT343
23+
6000
原装现货有上库存就有货全网最低假一赔万
NEC
22+
SOT343
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
NEC
2023+
SOT343
3000
十五年行业诚信经营,专注全新正品
NEC
22+
SOT343
20000
公司只有原装 品质保证
NEC
23+
SOT-343
33000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
26+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
RENESAS/瑞萨
25+
SOT343
12521
RENESAS/瑞萨原装特价2SC5752-T1B即刻询购立享优惠#长期有货
NEC
22+
SOT343
12245
现货,原厂原装假一罚十!

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