型号 功能描述 生产厂家 企业 LOGO 操作
2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol

NEC

瑞萨

2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol

CEL

2SC5752

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of

RENESAS

瑞萨

2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

文件:225.54 Kbytes Page:22 Pages

RENESAS

瑞萨

封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT343 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 6V 12GHZ SOT343 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

更新时间:2025-12-25 13:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
SOT343
23+
6000
原装现货有上库存就有货全网最低假一赔万
NEC
24+
SOT343
9600
原装现货,优势供应,支持实单!
NEC
2023+
SOT-343
58000
进口原装,现货热卖
NEC
23+
SOT-343
33000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEC
24+
NA/
6250
原装现货,当天可交货,原型号开票
RENESAS/瑞萨
25+
SOT343
12521
RENESAS/瑞萨原装特价2SC5752-T1B即刻询购立享优惠#长期有货
NEC
22+
SOT343
12245
现货,原厂原装假一罚十!
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
瑞萨
25+
QFPSOPDIP
30675
专业代理瑞萨品牌原装正品
NEC
2447
SOT343
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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