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2SC550晶体管资料
2SC550别名:2SC550三极管、2SC550晶体管、2SC550晶体三极管
2SC550生产厂家:日本东芝公司
2SC550制作材料:Si-NPN
2SC550性质:甚高频 (VHF)_功率放大 (L)
2SC550封装形式:特殊封装
2SC550极限工作电压:36V
2SC550最大电流允许值:1.5A
2SC550最大工作频率:175MHZ
2SC550引脚数:3
2SC550最大耗散功率:4W
2SC550放大倍数:
2SC550图片代号:F-28
2SC550vtest:36
2SC550htest:175000000
- 2SC550atest:1.5
2SC550wtest:4.0001
2SC550代换 2SC550用什么型号代替:BLW35,BLY58,BLY60,2N3632,2N3927,3DA22B,40307,40665,
2SC550价格
参考价格:¥0.8004
型号:2SC5501A-4-TR-E 品牌:ON 备注:这里有2SC550多少钱,2025年最近7天走势,今日出价,今日竞价,2SC550批发/采购报价,2SC550行情走势销售排行榜,2SC550报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
VHFtoUHFLow-NoiseWide-BandAmplifierApplications VHFtoUHFLow-NoiseWide-BandAmplifierApplications Features ·Lownoise:NF=1.0dBtyp(f=1GHz). ·Highgain:|S21e|2=13dBtyp(f=1GHz). ·Highcutofffrequency:fT=7GHztyp. ·Largeallowablecollectordissipation:PC=500mWmax. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
VHFtoUHFWide-BandLow-NoiseAmplifierApplications VHFtoUHFWide-BandLow-NoiseAmplifierApplications Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
RFTransistor10V,70mA,fT=7GHz,NPNSingleMCP4 Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
RFTransistor10V,70mA,fT=7GHz,NPNSingleMCP4 Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High-FrequencyLow-NoiseAmplifierApplications High-FrequencyLow-NoiseAmplifierApplications Features ·Lownoise:NF=1.1dBtyp(f=1GHz). ·Highgain:|S21e|2=12dBtyp(f=1GHz). ·Highcutofffrequency:fT=8GHztyp. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
VHFtoUHFLow-NoiseWide-BandAmplifierApplications VHFtoUHFLow-NoiseWide-BandAmplifierApplications Features •Lownoise:NF=1.2dBtyp(f=1GHz). •Highgain:|S21e|2=15dBtyp(f=1GHz). •Highcutofffrequency:fT=9.0GHztyp. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
UHFtoSBandLow-NoiseAmplifierApplications UHFtoSBandLow-NoiseAmplifierApplications Features •Lownoise:NF=0.9dBtyp(f=1GHz).:NF=1.4dBtyp(f=1.5GHz). •Highgain:|S21e|2=11dBtyp(f=1GHz). •Highcutofffrequency:fT=11GHztyp. •Lowvoltage,lowcurrentoperation.(VCE=1V,IC=1mA):fT=7GHztyp.:|S21e|2=6dBtyp(f | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNepitaxialplanartype SiliconNPNepitaxialplanartype Forpoweramplification ■Features •High-speedswitching •TO-220Dbuilt-in:Excellentpackagewithwithstandvoltage5kVguaranteed | PanasonicPanasonic Semiconductor 松下松下电器 | |||
Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1600V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR FORLOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dBTYP.,Ga=16dBTYP.@VCE=2V,IC=2mA,f=2GHz •Maximumstablepowergain:MSG | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR FORLOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dBTYP.,Ga=16dBTYP.@VCE=2V,IC=2mA,f=2GHz •Maximumstablepowergain:MSG | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=5mA •Maximumavailablepowergain:MAG=19dBTYP.@f=2GHz,V | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=5mA •Maximumavailablepowergain:MAG=19dBTYP.@f=2GHz,V | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER LOWNOISEHIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:MAG=14dB | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:M | CEL California Eastern Labs | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER LOWNOISEHIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:MAG=14dB | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
VHFtoUHFWide-BandLow-NoiseAmplifierApplications 文件:470.98 Kbytes Page:8 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
VHFtoUHFWide-BandLow-NoiseAmplifierApplications 文件:470.98 Kbytes Page:8 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPNSILICONRFTRANSISTOR 文件:229.94 Kbytes Page:10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs | |||
封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs |
2SC550产品属性
- 类型
描述
- 型号
2SC550
- 功能描述
两极晶体管 - BJT MEDIUM OUTPUT AMPLIFIER
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2021+ |
SOT-343 |
4500 |
十年专营原装现货,假一赔十 |
|||
NEC |
23+ |
SOT343 |
9896 |
||||
NEC |
24+ |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
||||
RENESAS |
25+ |
假一赔十 |
8800 |
公司只做原装,详情请咨询 |
|||
RENESAS |
2511 |
假一赔十 |
77512 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
RENESAS |
23+ |
SOT343 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
NEC |
2019+ |
SOT323-4 |
36000 |
原盒原包装 可BOM配套 |
|||
NEC(日电电子) |
24+ |
N/A |
9548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
RENESAS |
24+ |
SOT343 |
5000 |
全现原装公司现货 |
|||
NEC |
23+24 |
SOT434 |
28950 |
专营原装正品SMD二三极管,电源IC |
2SC550规格书下载地址
2SC550参数引脚图相关
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2SC550数据表相关新闻
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2018-12-19
DdatasheetPDF页码索引
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