2SC550晶体管资料

  • 2SC550别名:2SC550三极管、2SC550晶体管、2SC550晶体三极管

  • 2SC550生产厂家:日本东芝公司

  • 2SC550制作材料:Si-NPN

  • 2SC550性质:甚高频 (VHF)_功率放大 (L)

  • 2SC550封装形式:特殊封装

  • 2SC550极限工作电压:36V

  • 2SC550最大电流允许值:1.5A

  • 2SC550最大工作频率:175MHZ

  • 2SC550引脚数:3

  • 2SC550最大耗散功率:4W

  • 2SC550放大倍数

  • 2SC550图片代号:F-28

  • 2SC550vtest:36

  • 2SC550htest:175000000

  • 2SC550atest:1.5

  • 2SC550wtest:4.0001

  • 2SC550代换 2SC550用什么型号代替:BLW35,BLY58,BLY60,2N3632,2N3927,3DA22B,40307,40665,

2SC550价格

参考价格:¥0.8004

型号:2SC5501A-4-TR-E 品牌:ON 备注:这里有2SC550多少钱,2025年最近7天走势,今日出价,今日竞价,2SC550批发/采购报价,2SC550行情走势销售排行榜,2SC550报价。
型号 功能描述 生产厂家&企业 LOGO 操作

VHFtoUHFLow-NoiseWide-BandAmplifierApplications

VHFtoUHFLow-NoiseWide-BandAmplifierApplications Features ·Lownoise:NF=1.0dBtyp(f=1GHz). ·Highgain:|S21e|2=13dBtyp(f=1GHz). ·Highcutofffrequency:fT=7GHztyp. ·Largeallowablecollectordissipation:PC=500mWmax.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

VHFtoUHFWide-BandLow-NoiseAmplifierApplications

VHFtoUHFWide-BandLow-NoiseAmplifierApplications Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

RFTransistor10V,70mA,fT=7GHz,NPNSingleMCP4

Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RFTransistor10V,70mA,fT=7GHz,NPNSingleMCP4

Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-FrequencyLow-NoiseAmplifierApplications

High-FrequencyLow-NoiseAmplifierApplications Features ·Lownoise:NF=1.1dBtyp(f=1GHz). ·Highgain:|S21e|2=12dBtyp(f=1GHz). ·Highcutofffrequency:fT=8GHztyp.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

VHFtoUHFLow-NoiseWide-BandAmplifierApplications

VHFtoUHFLow-NoiseWide-BandAmplifierApplications Features •Lownoise:NF=1.2dBtyp(f=1GHz). •Highgain:|S21e|2=15dBtyp(f=1GHz). •Highcutofffrequency:fT=9.0GHztyp.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

UHFtoSBandLow-NoiseAmplifierApplications

UHFtoSBandLow-NoiseAmplifierApplications Features •Lownoise:NF=0.9dBtyp(f=1GHz).:NF=1.4dBtyp(f=1.5GHz). •Highgain:|S21e|2=11dBtyp(f=1GHz). •Highcutofffrequency:fT=11GHztyp. •Lowvoltage,lowcurrentoperation.(VCE=1V,IC=1mA):fT=7GHztyp.:|S21e|2=6dBtyp(f

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Forpoweramplification ■Features •High-speedswitching •TO-220Dbuilt-in:Excellentpackagewithwithstandvoltage5kVguaranteed

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1600V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORLOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dBTYP.,Ga=16dBTYP.@VCE=2V,IC=2mA,f=2GHz •Maximumstablepowergain:MSG

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORLOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dBTYP.,Ga=16dBTYP.@VCE=2V,IC=2mA,f=2GHz •Maximumstablepowergain:MSG

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=5mA •Maximumavailablepowergain:MAG=19dBTYP.@f=2GHz,V

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=5mA •Maximumavailablepowergain:MAG=19dBTYP.@f=2GHz,V

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER LOWNOISEHIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:MAG=14dB

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:M

CEL

California Eastern Labs

CEL

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER LOWNOISEHIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:MAG=14dB

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

VHFtoUHFWide-BandLow-NoiseAmplifierApplications

文件:470.98 Kbytes Page:8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

VHFtoUHFWide-BandLow-NoiseAmplifierApplications

文件:470.98 Kbytes Page:8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

NPNSILICONRFTRANSISTOR

文件:229.94 Kbytes Page:10 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

封装/外壳:SC-82A,SOT-343 包装:托盘 描述:RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

2SC550产品属性

  • 类型

    描述

  • 型号

    2SC550

  • 功能描述

    两极晶体管 - BJT MEDIUM OUTPUT AMPLIFIER

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-7-23 10:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2021+
SOT-343
4500
十年专营原装现货,假一赔十
NEC
23+
SOT343
9896
NEC
24+
6000
全新原厂原装正品现货,低价出售,实单可谈
RENESAS
25+
假一赔十
8800
公司只做原装,详情请咨询
RENESAS
2511
假一赔十
77512
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
RENESAS
23+
SOT343
8560
受权代理!全新原装现货特价热卖!
NEC
2019+
SOT323-4
36000
原盒原包装 可BOM配套
NEC(日电电子)
24+
N/A
9548
原厂可订货,技术支持,直接渠道。可签保供合同
RENESAS
24+
SOT343
5000
全现原装公司现货
NEC
23+24
SOT434
28950
专营原装正品SMD二三极管,电源IC

2SC550芯片相关品牌

  • AUSTIN
  • CIT
  • CONTRINEX
  • EPCOS
  • GMT
  • LRC
  • MOLEX5
  • OPLINK
  • Samtec
  • TOTAL-POWER
  • TSC
  • Vishay

2SC550数据表相关新闻