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2SC550晶体管资料

2SC550别名：2SC550三极管、2SC550晶体管、2SC550晶体三极管
2SC550生产厂家：日本东芝公司
2SC550制作材料：Si-NPN
2SC550性质：甚高频（VHF）_功率放大（L）
2SC550封装形式：特殊封装
2SC550极限工作电压：36V
2SC550最大电流允许值：1.5A
2SC550最大工作频率：175MHZ
2SC550引脚数：3
2SC550最大耗散功率：4W
2SC550放大倍数：
2SC550图片代号：F-28
2SC550vtest：36
2SC550htest：175000000
2SC550atest：1.5
2SC550wtest：4.0001

2SC550代换 2SC550用什么型号代替：BLW35,BLY58,BLY60,2N3632,2N3927,3DA22B,40307,40665,

2SC550价格

参考价格：￥0.8004

型号：2SC5501A-4-TR-E 品牌：ON 备注：这里有2SC550多少钱，2026年最近7天走势，今日出价，今日竞价，2SC550批发/采购报价，2SC550行情走势销售排行榜，2SC550报价。

型号	功能描述	生产厂家企业	LOGO
2SC5501	VHF to UHF Low-Noise Wide-Band Amplifier Applications VHF to UHF Low-Noise Wide-Band Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : \|S21e\|2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Large allowable collector dissipation : PC=500mW max.	SANYO 三洋	SANYO
2SC5501A	VHF to UHF Wide-Band Low-Noise Amplifier Applications VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max	SANYO 三洋	SANYO
2SC5501A	RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max	ONSEMI 安森美半导体	ONSEMI
2SC5501A	RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP4 2SC5501A is RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP4 for VHF to UHF Wide-Band Low-Noise Amplifier Applications. • Low-noise : NF=1.0dB typ (f=1GHz)\n• High gain :Forward Transfer Gain=13dB typ (f=1GHz)\n• High cut-off frequency : fT=7GHz typ\n• Large allowable collector dissipation : PC=500mW max;	ONSEMI 安森美半导体	ONSEMI
2SC5501A-4-TR-E	RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max	ONSEMI 安森美半导体	ONSEMI
2SC5502	High-Frequency Low-Noise Amplifier Applications High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : \|S21e\|2 =12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.	SANYO 三洋	SANYO
2SC5503	VHF to UHF Low-Noise Wide-Band Amplifier Applications VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.2dB typ (f=1GHz). • High gain : \|S21e\|2=15dB typ (f=1GHz). • High cutoff frequency : fT=9.0GHz typ.	SANYO 三洋	SANYO
2SC5504	UHF to S Band Low-Noise Amplifier Applications UHF to S Band Low-Noise Amplifier Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : \|S21e\|2=11dB typ (f=1GHz). • High cutoff frequency : fT=11GHz typ. • Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : \|S21e\|2=6dB typ (f	SANYO 三洋	SANYO
2SC5505	Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For power amplification ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed	PANASONIC 松下	PANASONIC
2SC5506	Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.	SANYO 三洋	SANYO
2SC5507	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)	NEC 瑞萨	NEC
2SC5507	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG	RENESAS 瑞萨	RENESAS
2SC5507-T2	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG	RENESAS 瑞萨	RENESAS
2SC5507-T2	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)	NEC 瑞萨	NEC
2SC5508	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V	NEC 瑞萨	NEC
2SC5508	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-A	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V	NEC 瑞萨	NEC
2SC5508-T2-A	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2B	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2B-A	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5509	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB	NEC 瑞萨	NEC
2SC5509	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5509	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: M	CEL	CEL
2SC5509-A	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5509-T2	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5509-T2	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB	NEC 瑞萨	NEC
2SC5509-T2-A	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5501A	VHF to UHF Wide-Band Low-Noise Amplifier Applications 文件：470.98 Kbytes Page：8 Pages	SANYO 三洋	SANYO
2SC5501A_12	VHF to UHF Wide-Band Low-Noise Amplifier Applications 文件：470.98 Kbytes Page：8 Pages	SANYO 三洋	SANYO
2SC5502	NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications	ONSEMI 安森美半导体	ONSEMI
2SC5503	NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications	ONSEMI 安森美半导体	ONSEMI
2SC5508_15	NPN SILICON RF TRANSISTOR 文件：229.94 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SC5508-A	封装/外壳：SOT-343F 包装：托盘描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品晶体管 - 双极（BJT）- 射频	CEL	CEL
2SC5508-T2-A	封装/外壳：SC-82A，SOT-343 包装：托盘描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品晶体管 - 双极（BJT）- 射频	CEL	CEL

2SC550产品属性

类型
描述
BVCEO(V)：
33
BVCBO(V)：
15
IC(A)：
0.035
HFE_MIN.：
50
HFE_MAX.：
100
HFE test_IC(mA)：
5
HFE test_VCE(V)：
2.0
ft (GHz)_TYP：
25
ft (GHz)test_VCE：
3
ft (GHz)test_IC(mA)：
30
ft (GHz)test_f(GHz)：
2
Package：
SOT-363

2SC550供应商更多...

更新时间：2026-5-14 14:18:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市拓亿芯电子有限公司	2SC5508-T2	NEC	25+	SOT-343	30000	代理全新原装现货,价格优势	询价
深圳市纳艾斯科技有限公司	2SC5508	NEC	24+	SOT343	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
中天科工半导体（深圳）有限公司	2SC5508-T2B-A	RENESAS/瑞萨	25+	SOT343	12514	RENESAS/瑞萨原装特价2SC5508-T2B-A即刻询购立享优惠#长期有货	询价
深圳市中飞凌科技有限公司	2SC5508-T2B-A	RENESAS	26+	假一赔十	360000	进口原装现货	询价
深圳市英瑞尔电子科技有限公司	2SC5508-T2	NEC	24+	SOT343	2600	原装现货假一赔十	询价
洪芯国际半导体（深圳）有限公司	2SC5508	RENESAS	26+	SOT-343	86720	全新原装正品价格最实惠假一赔百	询价
深圳市宇创芯科技有限公司	2SC5508	RENESAS	24+	SOT-343	16900	原装正品现货支持实单	询价
深圳市河锋鑫科技有限公司	2SC5508	NEC	SOT-343	22+	6000	十年配单,只做原装	询价
深圳市昌和盛利电子有限公司	2SC5508	NEC	26+	SOT343	9896	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市创新迹电子有限公司	2SC5508-T2	NEC	2021+	SOT343	9000	原装现货,随时欢迎询价	询价

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2SC550规格书下载地址

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2SC5353BL-TO126CK-TG
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2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
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找IC，尽在114IC

2SC550晶体管资料

2SC550价格

2SC550产品属性

2SC550供应商更多...

2SC550芯片相关品牌

2SC550规格书下载地址

2SC550参数引脚图相关

2SC550数据表相关新闻

2SC5353BL-TO126CK-TG

2SC5569G-SOT89R-TG

2SC5015-T1

2SC5299

2SC5826中文资料库

2SC945_2SC945晶体管_2SC945中文资料_2SC945代换

DdatasheetPDF页码索引