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2SC550晶体管资料

  • 2SC550别名：2SC550三极管、2SC550晶体管、2SC550晶体三极管

  • 2SC550生产厂家：日本东芝公司

  • 2SC550制作材料：Si-NPN

  • 2SC550性质：甚高频 （VHF）_功率放大 （L）

  • 2SC550封装形式：特殊封装

  • 2SC550极限工作电压：36V

  • 2SC550最大电流允许值：1.5A

  • 2SC550最大工作频率：175MHZ

  • 2SC550引脚数：3

  • 2SC550最大耗散功率：4W

  • 2SC550放大倍数：

  • 2SC550图片代号：F-28

  • 2SC550vtest：36

  • 2SC550htest：175000000

  • 2SC550atest：1.5

  • 2SC550wtest：4.0001

  • 2SC550代换 2SC550用什么型号代替：BLW35,BLY58,BLY60,2N3632,2N3927,3DA22B,40307,40665,

2SC550价格

参考价格：￥0.8004

型号：2SC5501A-4-TR-E 品牌：ON 备注：这里有2SC550多少钱，2025年最近7天走势，今日出价，今日竞价，2SC550批发/采购报价，2SC550行情走势销售排行榜，2SC550报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC5501

VHFtoUHFLow-NoiseWide-BandAmplifierApplications

VHFtoUHFLow-NoiseWide-BandAmplifierApplications Features ·Lownoise:NF=1.0dBtyp(f=1GHz). ·Highgain:|S21e|2=13dBtyp(f=1GHz). ·Highcutofffrequency:fT=7GHztyp. ·Largeallowablecollectordissipation:PC=500mWmax.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5501A

VHFtoUHFWide-BandLow-NoiseAmplifierApplications

VHFtoUHFWide-BandLow-NoiseAmplifierApplications Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5501A

RFTransistor10V,70mA,fT=7GHz,NPNSingleMCP4

Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5501A-4-TR-E

RFTransistor10V,70mA,fT=7GHz,NPNSingleMCP4

Features •Low-noise:NF=1.0dBtyp(f=1GHz) •Highgain:⏐S21e⏐2=13dBtyp(f=1GHz) •Highcut-offfrequency:fT=7GHztyp •Largeallowablecollectordissipation:PC=500mWmax

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5502

High-FrequencyLow-NoiseAmplifierApplications

High-FrequencyLow-NoiseAmplifierApplications Features ·Lownoise:NF=1.1dBtyp(f=1GHz). ·Highgain:|S21e|2=12dBtyp(f=1GHz). ·Highcutofffrequency:fT=8GHztyp.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5503

VHFtoUHFLow-NoiseWide-BandAmplifierApplications

VHFtoUHFLow-NoiseWide-BandAmplifierApplications Features •Lownoise:NF=1.2dBtyp(f=1GHz). •Highgain:|S21e|2=15dBtyp(f=1GHz). •Highcutofffrequency:fT=9.0GHztyp.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5504

UHFtoSBandLow-NoiseAmplifierApplications

UHFtoSBandLow-NoiseAmplifierApplications Features •Lownoise:NF=0.9dBtyp(f=1GHz).:NF=1.4dBtyp(f=1.5GHz). •Highgain:|S21e|2=11dBtyp(f=1GHz). •Highcutofffrequency:fT=11GHztyp. •Lowvoltage,lowcurrentoperation.(VCE=1V,IC=1mA):fT=7GHztyp.:|S21e|2=6dBtyp(f

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5505

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Forpoweramplification ■Features •High-speedswitching •TO-220Dbuilt-in:Excellentpackagewithwithstandvoltage5kVguaranteed

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SC5506

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1600V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5507

NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SC5507

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORLOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dBTYP.,Ga=16dBTYP.@VCE=2V,IC=2mA,f=2GHz •Maximumstablepowergain:MSG

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5507-T2

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORLOWCURRENT,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dBTYP.,Ga=16dBTYP.@VCE=2V,IC=2mA,f=2GHz •Maximumstablepowergain:MSG

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5507-T2

NPNSILICONRFTRANSISTORFORLOWCURRENT,LOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

FEATURES •Lownoiseandhighgainwithlowcollectorcurrent •NF=1.2dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=2mA •Maximumstablepowergain:MSG=22dBTYP.@f=2GHz,VCE=2V,IC=5mA •fT=25GHztechnology •Flat-lead4-pinthinsupermini-mold(t=0.59mm)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SC5508

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=5mA •Maximumavailablepowergain:MAG=19dBTYP.@f=2GHz,V

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SC5508

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5508-A

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5508-T2

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5508-T2

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD

NPNSILICONRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHINSUPERMINI-MOLD FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dB,Ga=16dBTYP.@f=2GHz,VCE=2V,IC=5mA •Maximumavailablepowergain:MAG=19dBTYP.@f=2GHz,V

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SC5508-T2-A

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5508-T2B

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5508-T2B-A

NPNSILICONRFTRANSISTORFORLOW-NOISE,HIGH-GAINAMPLIFICATION

NPNSILICONRFTRANSISTOR FORLOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealforlow-noise,high-gainamplificationapplications •NF=1.1dBTYP.,Ga=16dBTYP.@VCE=2V,IC=5mA,f=2GHz •Maximumavailablepowergain:MAG=19

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5509

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER LOWNOISEHIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:MAG=14dB

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SC5509

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5509

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:M

CEL

California Eastern Labs

CEL
2SC5509-A

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5509-T2

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5509-T2

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER LOWNOISEHIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailablepowergain:MAG=14dB

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SC5509-T2-A

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWER,LOW-NOISE

NPNSILICONRFTRANSISTOR FORMEDIUMOUTPUTPOWER,LOW-NOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealformediumoutputpoweramplification •NF=1.2dBTYP.,Ga=12dBTYP.@VCE=2V,IC=10mA,f=2GHz •Maximumavailable

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5501A

VHFtoUHFWide-BandLow-NoiseAmplifierApplications

文件：470.98 Kbytes Page：8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5501A_12

VHFtoUHFWide-BandLow-NoiseAmplifierApplications

文件：470.98 Kbytes Page：8 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC5508_15

NPNSILICONRFTRANSISTOR

文件：229.94 Kbytes Page：10 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC5508-A

封装/外壳：SOT-343F 包装：托盘 描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

California Eastern Labs

CEL
2SC5508-T2-A

封装/外壳：SC-82A，SOT-343 包装：托盘 描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

California Eastern Labs

CEL

2SC550产品属性

  • 类型

    描述

  • 型号

    2SC550

  • 功能描述

    两极晶体管 - BJT MEDIUM OUTPUT AMPLIFIER

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

2SC550供应商更多...

更新时间：2025-7-24 19:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市昂芯微科技有限公司
2SC5508-T2B-A
RENESAS/瑞萨
23+
SOT343
8160
原厂原装
询价
深圳市科恒伟业电子有限公司
2SC5508-T2B-A
RENESAS
21+
VQFN
9800
只做原装正品假一赔十!正规渠道订货!
询价
深圳市华睿芯科技有限公司
2SC5508-T2-A
NEC
24+
SOT343
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市润联芯城科技有限公司
2SC5508-T2B-A
NEC
22+
SOT-343
30000
只做原装正品
询价
深圳市恒佳微电子有限公司
2SC5508-T2B-A
RENESAS/瑞萨
2021+
SOT-343
4500
十年专营原装现货,假一赔十
询价
深圳市粤骏腾电子科技有限公司
2SC5508-T2
NEC
24+
SOT343
2460
全新原装数量均有多电话咨询
询价
中天科工半导体（深圳）有限公司
2SC5508-T2B-A
RENESAS/瑞萨
25+
SOT343
12514
RENESAS/瑞萨原装特价2SC5508-T2B-A即刻询购立享优惠#长期有货
询价
深圳市正纳电子有限公司
2SC5508-T2-A
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
询价
深圳市卓越微芯电子有限公司
2SC5508-T2B-A
RENESAS
2020+
SOT343
30000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市芯诚实创科技有限公司
2SC5508
NEC
2022
SOT343
3080
原装正品
询价

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