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2SC54晶体管资料

  • 2SC54别名：2SC54三极管、2SC54晶体管、2SC54晶体三极管

  • 2SC54生产厂家：日本富士通公司

  • 2SC54制作材料：Si-NPN

  • 2SC54性质：射频/高频放大 （HF）_TR

  • 2SC54封装形式：直插封装

  • 2SC54极限工作电压：40V

  • 2SC54最大电流允许值：0.1A

  • 2SC54最大工作频率：350MHZ

  • 2SC54引脚数：3

  • 2SC54最大耗散功率：0.3W

  • 2SC54放大倍数：

  • 2SC54图片代号：D-8

  • 2SC54vtest：40

  • 2SC54htest：350000000

  • 2SC54atest：.1

  • 2SC54wtest：.3

  • 2SC54代换 2SC54用什么型号代替：BFW16,BFW17,BFX55,BFX59,BFY74,BFY75,BSW63,BSW64,BSW84,BSW85,2N915,3DG120C,

2SC54价格

参考价格：￥1.3971

型号：2SC5415AE-TD-E 品牌：ON 备注：这里有2SC54多少钱，2024年最近7天走势，今日出价，今日竞价，2SC54批发/采购报价，2SC54行情走势销售排行榜，2SC54报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC5404

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORMEDIUMRESOLUTIONDISPLAY,COLORTV.HIGHSPEEDSWITCHINGAPPLICATIONS)

NPNTRIPLEDIFFUSEDMESATYPE HORIZONTALDEFLECTIONOUTPUTFORMEDIUMRESOLUTIONDISPLAY,COLORTV HDTVHIGHSPEEDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5404

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(H)ISpackage ·Highvoltage;highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·Horizontaldeflectionoutputforhighresolutiondisplay,colorTV ·Highspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5404

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(H)ISpackage ·Highvoltage;highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·Horizontaldeflectionoutputforhighresolutiondisplay,colorTV ·Highspeedswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SC5404

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3P(H)ISpackage ·Highvoltage;highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·Horizontaldeflectionoutputforhighresolutiondisplay,colorTV ·Highspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5406

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5406A

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5407

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighBreakdownVoltage-:VCBO=1700V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Designedforhorizontaldeflectionoutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5407

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5408

NPNEPITAXIALSILICONTRANSISTORFORMICROWAVEHIGH-GAINAMPLIFICATION

FEATURE •HighfT 17GHzTYP. •Highgain |S21e|2=15.5dBTYP. @f=2GHz,VCE=2V,IC=7mA •NF=1.1dB,@f=2GHzVCE=2V,IC=1mA •6-pinSmallMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5408-T1

NPNEPITAXIALSILICONTRANSISTORFORMICROWAVEHIGH-GAINAMPLIFICATION

FEATURE •HighfT 17GHzTYP. •Highgain |S21e|2=15.5dBTYP. @f=2GHz,VCE=2V,IC=7mA •NF=1.1dB,@f=2GHzVCE=2V,IC=1mA •6-pinSmallMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5409

NPNEPITAXIALSILICONTRANSISTORFORMICROWAVEHIGH-GAINAMPLIFICATION

FEATURE •HighfT 16GHzTYP. •Highgain |S21e|2=14dBTYP. @f=2GHz,VCE=2V,IC=20mA •NF=1.1dB,@f=2GHzVCE=2V,IC=3mA •6-pinSmallMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5409-T1

NPNEPITAXIALSILICONTRANSISTORFORMICROWAVEHIGH-GAINAMPLIFICATION

FEATURE •HighfT 16GHzTYP. •Highgain |S21e|2=14dBTYP. @f=2GHz,VCE=2V,IC=20mA •NF=1.1dB,@f=2GHzVCE=2V,IC=3mA •6-pinSmallMiniMoldPackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5411

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORMEDIUMRESOLUTIONDISPLAY,COLORTV.HIGHSPEEDSWITCHINGAPPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORHIGH RESOLUTION DISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS HighVoltage:VCBO=1500V LowSaturationVoltage:VCE(sat)=3V(Max.) HighSpeed:tf=0.15µs(Typ.) CollectorMetal(Fin)isFullyCoveredwithMoldResin.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5412

SiliconNPNtriplediffusionmesatype

Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5414

High-FrequencyLow-NoiseAmplifierApplications

High-FrequencyLow-NoiseAmplifierApplications Features ·Highgain:S21e2=9.5dBtyp(f=1GHz). ·Highcutofffrequency:fT=6.7GHztyp.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5414A

High-FrequencyLow-NoiseAmplifierApplications

High-FrequencyLow-NoiseAmplifierApplications Features •Highgain:⏐S21e⏐2=9.5dBtyp(f=1GHz). •Highcut-offfrequency:fT=6.7GHztyp.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5415

High-FrequencyLow-NoiseAmplifierApplications

High-Frequency Low-NoiseAmplifierApplications Features ·Highgain:|S21e|2=9dBtyp(f=1GHz). ·Highcutofffrequency:fT=6.7GHztyp.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5415A

High-FrequencyLow-NoiseAmplifierApplications

High-FrequencyLow-NoiseAmplifierApplications Features •Highgain:⏐S21e⏐2=9dBtyp(f=1GHz) •Highcut-offfrequency:fT=6.7GHztyp

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5415A

RFTransistor12V,100mA,fT=6.7GHz,NPNSinglePCP

Features •Highgain:⏐S21e⏐2=9dBtyp(f=1GHz) •Highcut-offfrequency:fT=6.7GHztyp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5415AE-TD-E

RFTransistor12V,100mA,fT=6.7GHz,NPNSinglePCP

Features •Highgain:⏐S21e⏐2=9dBtyp(f=1GHz) •Highcut-offfrequency:fT=6.7GHztyp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5415AF-TD-E

RFTransistor12V,100mA,fT=6.7GHz,NPNSinglePCP

Features •Highgain:⏐S21e⏐2=9dBtyp(f=1GHz) •Highcut-offfrequency:fT=6.7GHztyp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC5416

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Highbreakdownvoltage ·Highreliability APPLICATIONS ·Forinverterlightingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5416

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Fpackage ·Highbreakdownvoltage ·Highreliability APPLICATIONS ·Forinverterlightingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SC5416

InverterLightingApplications

InverterLightingApplications Features •Highbreakdownvoltage. •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5416LS

NPNSILICONTRANSISTOR(HIGHVOLTAGEPOWERSWITCHINGAPPLICATIONS)

HIGHVOLTAGEPOWERSWITCHINGAPPLICATIONS

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
2SC5417

InverterLightingApplications

InverterLightingApplications Features •Highbreakdownvoltage. •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5417

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Highbreakdownvoltage •Highreliability APPLICATIONS •Forinverterlightingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC5417

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Highbreakdownvoltage •Highreliability APPLICATIONS •Forinverterlightingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC
2SC5417

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Highbreakdownvoltage •Highreliability APPLICATIONS •Forinverterlightingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC5417LS

InverterLightingApplications

InverterLightingApplications Features •Highbreakdownvoltage. •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5418

Forhorizontaldeflectionoutput

SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5419

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanertype Forgeneralamplification Complementaryto2SC5419 ■Features ●HighcollectortoemittervoltageVCEO.

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5419

SiliconNPNtriplediffusionplanertype(Forlow-frequencyoutputamplification)

SiliconNPNtriplediffusionplanartype Forlow-frequencyoutputamplification ■Features •Highcollector-emittervoltage(Baseopen)VCEO •HightransitionfrequencyfT •Allowingsupplywiththeradialtaping

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5420

InverterLightingApplications

InverterLightingApplications Features •Highbreakdownvoltage(VCBO=1000V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess.

SANYOSanyo

三洋三洋电机株式会社

SANYO
2SC5421

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORMEDIUMRESOLUTIONDISPLAY,COLORTV.HIGHSPEEDSWITCHINGAPPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORHIGHRESOLUTION DISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS HighVoltage:VCBO=1500V LowSaturationVoltage:VCE(sat)=3V(Max.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5422

NPNTRIPLEDIFFUSEDMESATYPE(HORIZONTALDEFLECTIONOUTPUTFORMEDIUMRESOLUTIONDISPLAY,COLORTVFORMULTI-MEDIA&HDTVHIGHSPEEDSWITCHINGAPPLIC

HORIZONTALDEFLECTIONOUTPUTFORHIGHRESOLUTION DISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS HighVoltage:VCBO=1700V LowSaturationVoltage:VCE(sat)=3V(Max.) HighSpeed:tf=0.15µs(Typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC5423

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features ●Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer ●High-speedswitching ●Wideareaofsafeoperation(ASO)

PanasonicPanasonic Corporation

松下松下电器

Panasonic
2SC5431

NPNEPITAXIALSILICONTRANSISTORFORUHFTUNEROSC/MIX

FEATURE •Ultrasupermini-moldthinflatpackage (1.4mm×0.8mm×0.59mm:TYP.) •Containssamechipas2SC5004

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5431

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORUHFTUNEROSC/MIX FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5004 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5432

NPNEPITAXIALSILICONTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

FEATURES •Containssamechipas2SC5006 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5432

NPNEPITAXIALSILICONTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

FEATURE •Ultrasupermini-moldthinflatpackage (1.4mm×0.8mm×0.59mm:TYP.) •Containssamechipas2SC5006

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5432-T1

NPNEPITAXIALSILICONTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

FEATURES •Containssamechipas2SC5006 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5433

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5007 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5433

NPNEPITAXIALSILICONTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

FEATURE •Ultrasupermini-moldthinflatpackage (1.4mm×0.8mm×0.59mm:TYP.) •Containssamechipas2SC5007

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5433-T1

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5007 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5434

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5008 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5434

NPNEPITAXIALSILICONTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

FEATURE •Ultrasupermini-moldthinflatpackage(1.4mm×1.8mm×0.59mm:TYP.) •Containssamechipas2SC5008

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5434-T1

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5008 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5435

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5010 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5435

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5435,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,S21e2=11.0dBTYP.@VCE=3V,IC=10mA,f=2GHz

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5435

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5435,2SC5786) Q1:High-gaintransistor fT=12.0GHzTYP.,½S21e½2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Lowphasedi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5435

NPNSILICONSiGeRFTWINTRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES •2differentbuilt-intransistors(2SC5435,NESG2107M33) Q1:Highgaintransistor fT=12.0GHzTYP.,S21e2=11dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inl

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5435

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5435,2SC5600) Q1:Built-inhigh-gaintransistor fT=12.0GHzTYP.,½S21e½2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Bui

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5435

NPNEPITAXIALSILICONTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

NPNEPITAXIALSILICONTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5010 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC5435-T1

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5010 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5436

NPNSILICONRFTRANSISTOR

NPNEPITAXIALSILICONTRANSISTOR FORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION FLAT-LEAD3-PINTHIN-TYPEULTRASUPERMINIMOLD FEATURES •Containssamechipas2SC5186 •Flat-lead3-pinthin-typeultrasuperminimoldpackage

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5436

NPNSILICONSiGeRFTWINTRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES •2differentbuilt-intransistors(2SC5436,NESG2107M33) Q1:Highgaintransistor fT=12GHzTYP.,S21e2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Built-inlo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5436

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5436,2SC5786) Q1:High-gaintransistor fT=12.0GHzTYP.,½S21e½2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Lowphasedi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5436

NPNSILICONRFTWINTRANSISTOR

NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5436,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,½S21e½2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Bui

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC5436

NPNEPITAXIALSILICONTRANSISTORULTRASUPERMINIMOLDFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

FEATURE •Ultrasupermini-moldthinflatpackage (1.4mm×0.8mm×0.59mm:TYP.) •Containssamechipas2SC5186

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SC54产品属性

  • 类型

    描述

  • 型号

    2SC54

  • 制造商

    ON Semiconductor

  • 功能描述

    BIP NPN 100MA 12V FT=6.7G - Tape and Reel

2SC54供应商更多...

更新时间：2024-5-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SC5434-T1
NEC
23+
NA/
115240
原装现货,当天可交货,原型号开票
询价
深圳市科芯源微电子有限公司
2SC5434
RENESAS/瑞萨
23+
SOT423
54258
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳深宇韬电子科技有限公司
2SC5434-T1
NEC
2023+
SOT-423
8800
正品渠道现货 终端可提供BOM表配单。
询价
深圳市汇莱威科技有限公司
2SC5434-T1
NEC
2320+
SOT-423
562000
16年只做原装原标渠道现货终端BOM表可配单提供样品
询价
深圳市特顺芯科技有限公司
2SC5434FB
SANYO
08PB
60000
询价
深圳市惊羽科技有限公司
2SC5434FB
NEC-日本电气
24+25+/26+27+
SOT-423
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市智创诚芯电子科技有限公司
2SC5434-T1
NEC
22+
SOT-423
25000
原装现货,价格优惠,假一罚十
询价
深圳市宏捷佳电子科技有限公司
2SC5434
NEC
2023+
SOT-423
50000
原装现货
询价
天津市博通航睿技术有限公司
2SC5435
NEC
01+
SOT363
3100
全新原装 实单必成
询价
深圳市威雅利发展有限公司
2SC5434-T1
NEC
05+
SOT-423
97136
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

2SC54芯片相关品牌

  • CHENDA
  • DIGITRON
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • SICK
  • SKYWORKS
  • TAK_CHEONG
  • TDK
  • TOCOS

2SC54规格书下载地址

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