NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HDTV HIGH SPEED SWITCHING APPLICATIONS

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications.

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 16 GHz TYP. • High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA • 6-pin Small Mini Mold Package

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 16 GHz TYP. • High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA • 6-pin Small Mini Mold Package

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf = 0.15 µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.

Silicon NPN triple diffusion mesa type

For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e2=9.5dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ.

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz). • High cut-off frequency : fT=6.7GHz typ.

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features · High gain : |S21e|2=9dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ.

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP

Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP

Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP

Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications

NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS)

HIGH VOLTAGE POWER SWITCHING APPLICATIONS

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High breakdown voltage • High reliability APPLICATIONS • For inverter lighting applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High breakdown voltage • High reliability APPLICATIONS • For inverter lighting applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High breakdown voltage • High reliability APPLICATIONS • For inverter lighting applications

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.

For horizontal deflection output

Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 ■Features ● High collector to emitter voltage VCEO.

Silicon NPN triple diffusion planer type(For low-frequency output amplification)

Silicon NPN triple diffusion planar type For low-frequency output amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Allowing supply with the radial taping

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.)

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLIC

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf = 0.15 µs (Typ.)

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX

FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5004

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5004 • Flat-lead 3-pin thin-type ultra super minimold package

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5006

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5007 • Flat-lead 3-pin thin-type ultra super minimold package

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5007

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5007 • Flat-lead 3-pin thin-type ultra super minimold package

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5008 • Flat-lead 3-pin thin-type ultra super minimold package

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 1.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5008

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5008 • Flat-lead 3-pin thin-type ultra super minimold package

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Bui

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor fT = 12 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in lo

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Bui

NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5186