型号 功能描述 生产厂家 企业 LOGO 操作
2SC5435

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

RENESAS

瑞萨

2SC5435

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

RENESAS

瑞萨

2SC5435

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l

RENESAS

瑞萨

2SC5435

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Bui

RENESAS

瑞萨

2SC5435

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

NEC

瑞萨

2SC5435

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

RENESAS

瑞萨

2SC5435

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package

RENESAS

瑞萨

2SC5435产品属性

  • 类型

    描述

  • 型号

    2SC5435

  • 制造商

    Renesas Electronics

  • 功能描述

    NPN

更新时间:2025-12-25 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
SOT23
8650
受权代理!全新原装现货特价热卖!
NEC
18+
SOT-323
1700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
2023+
SOT-323
8800
正品渠道现货 终端可提供BOM表配单。
NK/南科功率
2025+
SOT-523
986966
国产
RENESAS/瑞萨
20+
SOT-523
120000
原装正品 可含税交易
RENESAS/瑞萨
25+
SOT523
15000
全新原装现货,价格优势
NEC
2450+
SOT423
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
24+
SOT-323
60000
NEC
24+
SOD423
3000
原装现货假一罚十
NEC
24+
SOT23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

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