NPN EPITAXIAL TYPE (VIDEO DRIVER FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS)

VIDEO DRIVER FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS

EPITAXIAL PLANAR TYPE (VIDEO OUTPUT FOR HIGH DEFINITION VDT HIGH SPEED SWITCHING APPLICATIONS)

Video Output for High Definition VDT High Speed Switching Applications ● High transition frequency: fT = 400 MHz (typ.) (VCE = 10 V, IC = 70 mA) ● Low output capacitance: Cob

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC=50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC=50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC=50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC=50mA ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

High-hFE, AF Amp Applications??????????

High-hFE, AF Amp Application Features • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=0.7A). • Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V). • High VEBO(VEBO≥15V). Applications • AF amp, various drivers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ;high speed APPLICATIONS ·For use in high voltage and power switching applications

Silicon NPN Power Transistors

DESCRIPTION · With TO-220C package · High voltage ;high speed APPLICATIONS · For use in high voltage and power switching applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1618

Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)

For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A ■Features ● Low collector to emitter saturation voltage VCE(sat). ● Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. ● Allowing supply with the radia

Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)

For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A ■Features ● Low collector to emitter saturation voltage VCE(sat). ● Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. ● Allowing supply with the radia

NPN EPITAXIAL YTP (DRIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS)

Driver Stage Amplifier Applications Voltage Amplifier Applications • Complementary to 2SA1620

Silicon NPN Epitaxial

Silicon NPN Epitaxial

Silicon NPN Epitaxial

Features ● High DC current gain: hFE = 100~320.

NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS)

Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621

Silicon NPN triple diffusion planar type

For color TV horizontal deflection driver ■ Features • High collector-emitter voltage (Base open) VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

Silicon NPN Epitaxial

Features ● High emitter-base voltage: VEBO = 25 V (min). ● High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). ● Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). ● High DC current gain: hFE = 200 1200. ● Small package.

NPN PLANAR TYPE (UHF TV TUNER RF AMPLIFIER APPLICATIONS)

UHF TV Tuner RF Amplifier Applications • Low noise figure: NF = 2.8dB (typ.) • High power gain VCC= 4.5 V: Gpb= 15dB (typ.) • Excellent forward AGC characteristics

NPN EPITAXIAL PLANAR TYPE (HIGH FREQUENCY FM, RF, MIX, IF AMPLIFIERAPPLICATIONS)

High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2dB (typ.) (f = 100 MHz)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN Plastic-Encapsulate Transistor

FEATURES • Small reverse transfer capacitance： Cre = 0.55pF (typ.). • Low noise figure： NF=2dB (typ.) (f=100 MHz)

SOT-323 Plastic-Encapsulate Transistors

FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz)

Silicon NPN Epitaxial

Features ● Small reverse transfer capacitance: Cre = 0.55 pF (typ.) ● Low noise figure: NF = 2dB (typ.) (f = 100 MHz)

NPN Silicon Transistor

NPN Silicon Transistor P/b Lead(Pb)-Free FEATURES: * Power dissipation

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Small reverse transfer capacitance. ● Low noise figure APPLICATIONS ● FM,RF,MIX,IF Amplifier Applications.

TRANSISTOR (NPN)

FEATURES • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low noise figure: NF=2dB (typ.) (f=100 MHz)

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low noise figure: NF=2dB (typ.) (f=100 MHz)

Small Feedback Capacitance

DESCRIPTION • Low Noise NF = 2 dB TYP., @ f = 100MHz • Small Feedback Capacitance Cre = 0.55pF TYP. APPLICATIONS • High frequency amplifier applications • FM, RF ,MIX, IF amplifier applications

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low Voise figure: NF=2dB (typ.) (f=100 MHz) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 fl

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low Voise figure: NF=2dB (typ.) (f=100 MHz) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 fl

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=100mW) APPLICATIONS ● Audio frequency general purpose amplifier.

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Small reverse transfer capacitance: Cre= 0.55pF(typ.) • Low Voise figure: NF=2dB (typ.) (f=100 MHz) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 fl

Color TV Chroma Output, Sound Output, B/W TV Video Output, Sound Output Applications

Color TV Chroma Output and Audio Output Applications Features · High breakdown voltage (VCEO≥300V). · Micaless package facilitating easy mounting.

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Color TV Chroma Output, High-Voltage Driver Applications

Color TV Chroma Output, High-Voltage Driver Applications Features • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristics • Adoption of FBET process

Switching Regulator Applications

400V/4A Switching Regulator Applications Features • High breakdown voltage, high reliability (VCEO≥400V). • Fast switching speed (tf=0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Suitable for sets whose height is restricted.

Switching Regulator Applications

400V/7A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf=0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Suitable for sets whose height is restricted.

Switching Regulator Applications

500V/3A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf=0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Suitable for sets whose height is restricted.

Switching Regulator Applications

500V/5A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf=0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Suitable for sets whose height is restricted.

Switching Regulator Applications

800V/1.5A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf=0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Suitable for sets whose height is restricted.

Switching Regulator Applications

800V/3A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf=0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Suitable for sets whose height is restricted.

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band. It has large dynamic range and good current characteristics. FEATURES • Low Noise and High Gain NF = 1.5 dB TYP. at VCE= 10 V, IC= 5 mA, f = 1 GHz |S21e|2 = 10 dB TY

SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band. It has large dynamic range and good current characteristics. FEATURES • Low Noise and

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has be

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN Silicon Plastic Encapsulated Transistor

FEATURE • The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier • Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low noise. ● High gain. ● Power dissipation.(PC=150mW) APPLICATIONS ● High frequency low noise amplifier.

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Curren -IC= 0.1A • Low Collector Power—Pc=0.1W With SOT-323 Package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for broadband low noise amplifier ; wideband low noise amplifie

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz ● High gain. |S21e| 2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va