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2SC364晶体管资料

2SC364别名：2SC364三极管、2SC364晶体管、2SC364晶体三极管
2SC364生产厂家：日本东芝公司
2SC364制作材料：Si-NPN
2SC364性质：射频/高频放大（HF）
2SC364封装形式：直插封装
2SC364极限工作电压：
2SC364最大电流允许值：
2SC364最大工作频率：150MHZ
2SC364引脚数：3
2SC364最大耗散功率：
2SC364放大倍数：β=400
2SC364图片代号：A-20
2SC364vtest：0
2SC364htest：150000000
2SC364atest：0
2SC364wtest：0

2SC364代换 2SC364用什么型号代替：BF240,BF241,BF254,BF255,BF454,BF494,BF594,BF595,3DG111C,

2SC364价格

参考价格：￥0.9083

型号：2SC3646S-TD-E 品牌：ON Semiconductor 备注：这里有2SC364多少钱，2025年最近7天走势，今日出价，今日竞价，2SC364批发/采购报价，2SC364行情走势销售排行榜，2SC364报价。

型号	功能描述	生产厂家企业	LOGO
2SC3642	Ultrahigh-Definition Display Horizontal Deflection Output Applications? Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High reliability (Adoption of HVP process). • Fast speed. • High breakdown voltage. • Adoption of MBIT process.	SANYO 三洋	SANYO
2SC3643	Very High-Definition Display Horizontal Deflection Output Applications?????? Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High reliability (Adoption of HVP process). • Fast speed. • High breakdown voltage. • Adoption of MBIT process.	SANYO 三洋	SANYO
2SC3644	Ultrahigh-Definition Display Horizontal Deflection Output Applications??? Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High reliability (Adoption of HVP process). • High speed. • High breakdown voltage. • Adoption of MBIT process.	SANYO 三洋	SANYO
2SC3645	High-Voltage Switching, Predriver Applications High-Voltage Switching, Predriver Applications Features • Adoption of FBET process. • High breakdown voltage (VCEO=160V). • Excellent linearity of hFE and small Cob. • Fast switching speed. • Very small size marking it easy to provide high density, small-sized hybrid ICs.	SANYO 三洋	SANYO
2SC3645	High-Voltage Switching Applications ■ Features ● High breakdown voltage ● Excellent linearity of hFE and small Cob. ● Fast switching speed. ● Small Package For Mounting ● Complementary to 2SA1415	KEXIN 科信电子	KEXIN
2SC3646	High-Voltage Switching Applications Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Time	KEXIN 科信电子	KEXIN
2SC3646	High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	SANYO 三洋	SANYO
2SC3646	High-Voltage Switching Applications Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Time	LUGUANG 鲁光电子	LUGUANG
2SC3646	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SC3646S-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SC3646T-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SC3647	Bipolar Transistor Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	ONSEMI 安森美半导体	ONSEMI
2SC3647	HIGH-VOLTAGE SWITCHING APPLICATIONS ■ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs	UTC 友顺	UTC
2SC3647	High-Voltage Switching Applications Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity	KEXIN 科信电子	KEXIN
2SC3647	High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	SANYO 三洋	SANYO
2SC3647-AB3-R	HIGH-VOLTAGE SWITCHING APPLICATIONS ■ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs	UTC 友顺	UTC
2SC3647L-AB3-R	HIGH-VOLTAGE SWITCHING APPLICATIONS ■ FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high – density, small-sized hybrid ICs	UTC 友顺	UTC
2SC3647S-TD-E	Bipolar Transistor Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	ONSEMI 安森美半导体	ONSEMI
2SC3647T-TD-E	Bipolar Transistor Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs	ONSEMI 安森美半导体	ONSEMI
2SC3648	High-Voltage Switching, Preriver Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter	ONSEMI 安森美半导体	ONSEMI
2SC3648	Bipolar Transistor Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Co	ONSEMI 安森美半导体	ONSEMI
2SC3648	High-Voltage Switching Preriver Applications Bipolar Transistor (–)160V, (–)0.7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Co	ONSEMI 安森美半导体	ONSEMI
2SC3648	High-Voltage Switching, Preriver Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter	ONSEMI 安森美半导体	ONSEMI
2SC3648	High-Voltage Switching, Predriver Applications PNP / NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inver	SANYO 三洋	SANYO
2SC3648	HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS NPN SILICON TRANSISTOR FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed * Over Current Protection Function	UTC 友顺	UTC
2SC3648-AB3-R	HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS NPN SILICON TRANSISTOR FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed * Over Current Protection Function	UTC 友顺	UTC
2SC3648L-AB3-R	HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS NPN SILICON TRANSISTOR FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed * Over Current Protection Function	UTC 友顺	UTC
2SC3648S	High-Voltage Switching, Preriver Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter	ONSEMI 安森美半导体	ONSEMI
2SC3648T	High-Voltage Switching, Preriver Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • Color TV audio output, inverter	ONSEMI 安森美半导体	ONSEMI
2SC3649	High-Voltage Switching Applications PNP / NPN Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	SANYO 三洋	SANYO
2SC3649	High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC3649S-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SC3649S-TD-H	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SC3649T-TD-E	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SC3649T-TD-H	Bipolar Transistor High breakdown voltage and large current capacity Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s	ONSEMI 安森美半导体	ONSEMI
2SC3640	isc Silicon NPN Power Transistor 文件：193.37 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SC3642	isc Silicon NPN Power Transistor 文件：274.32 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SC3643	Very High-Definition Display Horizontal Deflection Output Applications	ONSEMI 安森美半导体	ONSEMI
2SC3644	Ultrahigh-Definition Display Horizontal Deflection Output Applications	ONSEMI 安森美半导体	ONSEMI
2SC3645	NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications	ONSEMI 安森美半导体	ONSEMI
2SC3645_15	NPN Transistors 文件：1.41622 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3645-HF_15	NPN Transistors 文件：1.49948 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3645-R	NPN Transistors 文件：1.41622 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3645-R-HF	NPN Transistors 文件：1.49948 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3645-S-HF	NPN Transistors 文件：1.49948 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3645-T	NPN Transistors 文件：1.41622 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3645-T-HF	NPN Transistors 文件：1.49948 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3646	High-Voltage Switching Applications 文件：457.35 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SC3646	High-Voltage Switching Applications 文件：113.47 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SC3646_15	NPN Transistors 文件：1.12978 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3646-R	NPN Transistors 文件：1.12978 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3646S-TD-E	Bipolar Transistor 文件：358.8 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
2SC3646S-TD-E	封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 100V 1A PCP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SC3646-T	NPN Transistors 文件：1.12978 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3646T-P-TD-E	封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 100V 1A PCP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SC3646T-TD-E	Bipolar Transistor 文件：358.8 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
2SC3647	High-Voltage Switching Applications 文件：446.5 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SC3647	NPN Transistors 文件：1.54737 Mbytes Page：3 Pages	LUGUANG 鲁光电子	LUGUANG
2SC3647	High-Voltage Switching Applications 文件：63.05 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SC3647	HIGH-VOLTAGE SWITCHING APPLICATIONS 文件：335.95 Kbytes Page：5 Pages	UTC 友顺	UTC

2SC364产品属性

类型
描述
型号
2SC364
制造商
Distributed By MCM
功能描述
SUB ONLY SANYO TRANS.TO-3PB1200V 6A 100W BCE

2SC364供应商更多...

更新时间：2025-12-25 10:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华斯顿科技有限公司	2SC3646/CB	Sanyo	25+23+	Sot-89	30845	绝对原装正品全新进口深圳现货	询价
洪芯国际半导体（深圳）有限公司	2SC3646S/CB	SANYO/三洋	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
千层芯半导体(深圳)有限公司	2SC3646T-TD-E	ON	24+	SMD	12000	原厂/代理渠道价格优势	询价
深圳市一线半导体有限公司	2SC3646S-TD	SANYO	24+	SOT-89	16200	新进库存/原装	询价
深圳市正纳电子有限公司	2SC3646T-TD-E	ON(安森美)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市佳鑫美电子科技有限公司	2SC3646	SANYO	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价
深圳市拓亿芯电子有限公司	2SC3646S-TD-E	ON	25+	SOT-89	30000	代理全新原装现货,价格优势	询价
深圳市科芯源微电子有限公司	2SC3646S-TD-E	ON/安森美	23+	SOT-89	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市腾亿芯科技有限公司	2SC3646S-TD-E	ON(安森美)	25+	标准封装	8000	原装，请咨询	询价
深圳诚思涵科技有限公司	2SC3646T-TD-E	ON(安森美)	23+	标准封装	5000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价

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2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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产品属性属性值搜索类似制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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2SC364晶体管资料

2SC364价格

2SC364产品属性

2SC364供应商更多...

2SC364芯片相关品牌

2SC364规格书下载地址

2SC364参数引脚图相关

2SC364数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

2SC3671-B,T2F(J

2SC3998中文资料

2SC2859中文资料

DdatasheetPDF页码索引