2SC363晶体管资料
2SC363别名：2SC363三极管、2SC363晶体管、2SC363晶体三极管
2SC363生产厂家：日本东芝公司
2SC363制作材料：Si-NPN
2SC363性质：射频/高频放大 （HF）
2SC363封装形式：直插封装
2SC363极限工作电压：
2SC363最大电流允许值：
2SC363最大工作频率：150MHZ
2SC363引脚数：3
2SC363最大耗散功率：
2SC363放大倍数：β=250
2SC363图片代号：A-20
2SC363vtest：0
2SC363htest：150000000
- 2SC363atest：0
2SC363wtest：0
2SC363代换 2SC363用什么型号代替：BF240,BF241,BF254,BF255,BF454,BF494,BF594,BF595,3DG120A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf | NEC 瑞萨 |   | ||
Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nThe 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage VCEO = 400 V\n• High Speed tf < 0.7 μs\n• Complement to 2SA1412-Z; | RENESAS 瑞萨 | | ||
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf | NEC 瑞萨 | | ||
SILICON POWER TRANSISTOR DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf | RENESAS 瑞萨 | | ||
丝印代码：DPAK；isc Silicon NPN Power Transistor DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver | ISC 无锡固电 | | ||
Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nThe 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage VCEO = 400 V\n• High Speed tf < 0.7 μs\n• Complement to 2SA1412-Z; | RENESAS 瑞萨 | | ||
Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nThe 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage VCEO = 600 V\n• High Speed tf < 0.5 μs\n• Complement to 2SA1413-Z; | RENESAS 瑞萨 | | ||
SILICON POWER TRANSISTOR DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf | RENESAS 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf | NEC 瑞萨 | | ||
NPN Silicon Epitaxial Transistor ■ Features ● High voltage ● High speed ● Complementary to 2SA1413-Z | KEXIN 科信电子 | | ||
NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf | NEC 瑞萨 | | ||
SILICON POWER TRANSISTOR DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf | RENESAS 瑞萨 | | ||
丝印代码：DPAK；isc Silicon NPN Power Transistor DESCRIPTION • With TO-252(DPAK) packaging • High collector-emitter voltage • Low collector saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION · With TO-3PN package · High voltage, high speed · High reliability APPLICATIONS · Ultrahigh-definition CRT display horizontal deflection output applications | ISC 无锡固电 | | ||
Very High-Definition Display Horizontal Deflection Output Applications???? Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High reliability (Adoption of HVP process). • Fast speed. • High breakdown voltage. • Adoption of MBIT process. | SANYO 三洋 | | ||
Silicon NPN Power Transistors DESCRIPTION · With TO-3PN package · High voltage ,high speed · High reliability APPLICATIONS · Ultrahigh-definition CRT display horizontal deflection output applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High voltage ,high speed • High reliability APPLICATIONS • Ultrahigh-definition CRT display horizontal deflection output applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High voltage ,high speed • High reliability APPLICATIONS • Ultrahigh-definition CRT display horizontal deflection output applications | ISC 无锡固电 | | ||
Very High-Definition Display Horizontal Deflection Output Applications?????? Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High reliability (Adoption of HVP process). • Fast speed. • High breakdown voltage. • Adoption of MBIT process. | SANYO 三洋 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High voltage ,high speed • High reliability APPLICATIONS • Ultrahigh-definition CRT display horizontal deflection output applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage, high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications | SAVANTIC | | ||
Very High-Definition Display Horizontal Deflection Output Applications?????? VERY HIGH-DEFINITION DISPLAY HORIZONTAL DEFLECTION OUTPUT APPLICATIONS Features • High reliability (Adoption of HVP process) • Fast speed. • High breakdown voltage. • Adoption of MBIT process. | SANYO 三洋 | | ||
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) 文件：93.38 Kbytes Page：2 Pages | MITSUBISHI 三菱电机 | | ||
NPN SILICON TRIPLE DIFFUSED TRANSISTOR 文件：753.18 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
isc Silicon NPN Power Transistor 文件：290.54 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
NPN Transistors 文件：1.36833 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
NPN SILICON EPITAXIAL TRANSISTOR 文件：895.35 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
NPN Transistors 文件：1.36833 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.36833 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.36833 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
Silicon NPN Power Transistors 文件：199.01 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：202.71 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：219.29 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：219.29 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：201.16 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：217.61 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：217.61 Kbytes Page：4 Pages | JMNIC 锦美电子 | |
2SC363产品属性
- 类型
描述
- Vcbo (V)：
500
- VCEO (V)：
400
- Vebo (V)：
7
- IC @25 °C (A)：
2
- VCE (sat) (V)：
1
- hFE：
40-120
- Pc (W)：
10
- fT (Typical) (GHz)：
0.05
- Cob (Typical) (pF)：
20
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2016+ |
TO252 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS |
24+ |
TO252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
2026+ |
TO-251TO-252 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
26+ |
TO-252 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
RENESAS |
24+ |
TO252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
26+ |
TO252 |
360000 |
进口原装现货 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
2SC363规格书下载地址
2SC363参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SC3657
- 2SC3653
- 2SC3652
- 2SC3651
- 2SC3650
- 2SC3649
- 2SC3648
- 2SC3647
- 2SC3646
- 2SC3645
- 2SC3644
- 2SC3643
- 2SC3642
- 2SC3641
- 2SC3640
- 2SC364
- 2SC3639
- 2SC3638
- 2SC3637
- 2SC3636
- 2SC3635
- 2SC3634
- 2SC3633
- 2SC3632(Z)
- 2SC3632
- 2SC3631(Z)
- 2SC3631
- 2SC3630
- 2SC3629
- 2SC3628
- 2SC3627
- 2SC3626
- 2SC3625
- 2SC3624(A)
- 2SC3624
- 2SC3623(A)
- 2SC3623
- 2SC3622(A)
- 2SC3622
- 2SC3621
- 2SC3620
- 2SC362
- 2SC3619
- 2SC3618
- 2SC3617
- 2SC3616
- 2SC3615
- 2SC3614
- 2SC3613
- 2SC3612
- 2SC3611
- 2SC3608
- 2SC3607
- 2SC3606
- 2SC3605
2SC363数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-52SC3998中文资料
2SC3998中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
