封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS NPN 10V 9GHZ SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitri

NPN Silicon Epitaxial Transistor

Features ● NF 1.2 dB TYP. @f = 1.0 GHz ● Ga 13 dB TYP. @f = 1.0 GHz

Low Noise and High Gain

DESCRIPTION • Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. • Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 13 dB TYP. @f = 1.0 GHz APPLICATIONS • Designed for use in low-noise and small signal amplifi

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by dir