型号 功能描述 生产厂家 企业 LOGO 操作
2SC3583-A

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:托盘 描述:RF TRANS NPN 10V 9GHZ SOT23-3 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitri

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by dir

CEL

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

RENESAS

瑞萨

Low Noise and High Gain

DESCRIPTION • Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. • Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 13 dB TYP. @f = 1.0 GHz APPLICATIONS • Designed for use in low-noise and small signal amplifi

ISC

无锡固电

NPN Silicon Epitaxial Transistor

Features ● NF 1.2 dB TYP. @f = 1.0 GHz ● Ga 13 dB TYP. @f = 1.0 GHz

KEXIN

科信电子

更新时间:2025-12-26 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
SOT23
5000
只做原装公司现货
NEC
24+
SOT-23
15000
原装现货假一赔十
NEC
SOT-23
22+
6000
十年配单,只做原装
NK/南科功率
2025+
SOT-23-3
986966
国产
NEC
24+
NA
990000
明嘉莱只做原装正品现货
NEC
1922+
SOT23
6598
原装进口现货库存专业工厂研究所配单供货
NEC
23+
SOT23
50000
全新原装正品现货,支持订货
NEC
22+
QR
20000
公司只有原装 品质保证
RENESAS
24+
SOT23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
23+
SOT23-3
50000
只做原装正品

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