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2SC333晶体管资料
2SC333别名：2SC333三极管、2SC333晶体管、2SC333晶体三极管
2SC333生产厂家：日本冲电气工业股份公司
2SC333制作材料：Si-NPN
2SC333性质：射频/高频放大 （HF）_开关管 （S）
2SC333封装形式：直插封装
2SC333极限工作电压：40V
2SC333最大电流允许值：0.2A
2SC333最大工作频率：450MHZ
2SC333引脚数：3
2SC333最大耗散功率：0.15W
2SC333放大倍数：
2SC333图片代号：D-13
2SC333vtest：40
2SC333htest：450000000
- 2SC333atest：0.2
2SC333wtest：0.15
2SC333代换 2SC333用什么型号代替：BSS11,BSX19,BSX20,BSX87,BSX88,BSX92,BSX93,BSY63,2N2368,2N2368A,2N2369,2N2369A,3DK9B,
2SC333价格
参考价格：￥1.0042
型号：2SC3332S 品牌：ON 备注：这里有2SC333多少钱，2025年最近7天走势，今日出价，今日竞价，2SC333批发/采购报价，2SC333行情走势销售排行榜，2SC333报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP/NPN Epitaxial Planar Silicon Transistors AF Amp Applications Use • Capable of being used in the low frequency to high frequency range. Features • Large current capacity and wide ASO. | SANYO 三洋 |   | ||
TO-92S Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Large Current Capacity and Wide ASO | JIANGSU 长电科技 | | ||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large current capacity and wide AOS. Applications Capable of being used in the low frequency to high frequency range. | FOSHAN 蓝箭电子 | | ||
AF Amp Applications AF Amp Applications Use • Capable of being used in the low frequency to high frequency range. Features • Large current capacity and wide ASO. | SANYO 三洋 | | ||
High-Voltage Switching Applications High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. | SANYO 三洋 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING, COLOR TV CHROMA OUTPUT APPLICATIONS) High Voltage Switching Applications Color TV Chroma Output Applications High voltage: VCEO = 250 V Low Cre: 1.8 pF (max) Complementary to 2SA1320 | TOSHIBA 东芝 | | ||
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING, COLOR TV CHROMA OUTPUT APPLICATIONS) HIGI VOLTAGE SWITCHING APPLICATION|S COLOR TV CHROMA OUTPUT APPLICATIONS High VOltage : VCEO = 25V Low Cre : 1.8 pF( Max.) Complememtary to 2SA1321 | TOSHIBA 东芝 | | ||
HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES: -High Voltage : VCEO 25,0V -Low. Cre : 2.0pF (Max.) -Complementary to 2SA1322 | TOSHIBA 东芝 | | ||
Power Bipolar Transistors
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • High voltage,high speed APPLICATIONS • For high voltage ; high speed and high power switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • High voltage,high speed APPLICATIONS • For high voltage ; high speed and high power switching applications | SAVANTIC | | ||
Silicon NPN Triple Diffused High voltage, high speed and high power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial Application UHF / VHF wide band amplifier | HitachiHitachi Semiconductor 日立日立公司 | | ||
TO-92S Bipolar Junction Transistors | ETC 知名厂家 | ETC | | |
Transistor | ETC 知名厂家 | ETC | | |
小信号晶体管 | STMICROELECTRONICS 意法半导体 | | ||
High-Voltage Switching Applications 文件：103.04 Kbytes Page：4 Pages | SANYO 三洋 | | ||
High-Voltage Switching Applications 文件：103.04 Kbytes Page：4 Pages | SANYO 三洋 | | ||
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High Voltage Switching Applications Color TV Chroma Output Applications 文件：131.98 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
High Voltage Switching Applications Color TV Chroma Output Applications 文件：131.98 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors 文件：168.58 Kbytes Page：4 Pages | SAVANTIC | |
2SC333产品属性
- 类型
描述
- 型号
2SC333
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
9250 |
原装现货,当天可交货,原型号开票 |
|||
ON |
22+ |
TO92 |
20000 |
公司只有原装 品质保证 |
|||
ON |
23+ |
TO92 |
5406 |
正规渠道,只有原装! |
|||
ON/安森美 |
25+ |
TO-92 |
860000 |
明嘉莱只做原装正品现货 |
|||
24+ |
4500 |
||||||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ON/安森美 |
2447 |
TO92 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON |
16+ |
TO92 |
5406 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SC333芯片相关品牌
2SC333规格书下载地址
2SC333参数引脚图相关
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2SC333数据表相关新闻
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2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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