2SC3332晶体管资料

  • 2SC3332别名:2SC3332三极管、2SC3332晶体管、2SC3332晶体三极管

  • 2SC3332生产厂家:日本三洋公司

  • 2SC3332制作材料:Si-NPN

  • 2SC3332性质:通用型 (Uni)

  • 2SC3332封装形式:直插封装

  • 2SC3332极限工作电压:180V

  • 2SC3332最大电流允许值:0.7A

  • 2SC3332最大工作频率:120MHZ

  • 2SC3332引脚数:3

  • 2SC3332最大耗散功率:0.7W

  • 2SC3332放大倍数

  • 2SC3332图片代号:A-20

  • 2SC3332vtest:180

  • 2SC3332htest:120000000

  • 2SC3332atest:0.7

  • 2SC3332wtest:0.7

  • 2SC3332代换 2SC3332用什么型号代替:2SC2383,2SC4612,2SD1526,3DA88C,

2SC3332价格

参考价格:¥1.0042

型号:2SC3332S 品牌:ON 备注:这里有2SC3332多少钱,2025年最近7天走势,今日出价,今日竞价,2SC3332批发/采购报价,2SC3332行情走势销售排行榜,2SC3332报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC3332

High-VoltageSwitchingApplications

High-VoltageSwitchingApplications Features ·Hgihbreakdownvoltage. ·ExcellenthFElinearity. ·WideASOandhighlyresistanttobreakdown. ·AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC3332

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC3332

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC3332

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SC3332

High-VoltageSwitchingApplications

文件:103.04 Kbytes Page:4 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BipolarTransistor160V,0.7A,LowVCE(sat)NPNSingleNP

Features •Hgihbreakdownvoltage •ExcellenthFElinearity •WideSOAandhighlyresistanttobreakdown •AdoptionofMBITprocess

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-VoltageSwitchingApplications

文件:103.04 Kbytes Page:4 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2SC3332产品属性

  • 类型

    描述

  • 型号

    2SC3332

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    High-Voltage Switching Applications

更新时间:2025-7-22 11:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO
11+
TO-92
1188
一级代理,专注军工、汽车、医疗、工业、新能源、电力
三年内
1983
只做原装正品
ON/安森美
2447
TO92
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON
23+
TO92
5406
正规渠道,只有原装!
ON
23+
TO92
10832
全新原装正品现货,支持订货
SANYO/三洋
23+
TO92
50000
全新原装正品现货,支持订货
24+
4500
SANYO/三洋
2023+
8700
原装现货
ON
23+
NA
3000
全新原装正品!一手货源价格优势!
TOS
23+
TO
20000
正品原装货价格低

2SC3332芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • IDT
  • LORLIN
  • LUGUANG
  • MOLEX4
  • NEC
  • SILABS
  • SOURIAU
  • SUPERWORLD

2SC3332数据表相关新闻

  • 2SC2712G-SOT23.3R-Y-TG

    2SC2712G-SOT23.3R-Y-TG

    2023-1-31
  • 2SC3356

    2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.

    2021-3-23
  • 2SC380TM-O

    只做原装假一赔十

    2020-11-14
  • 2SC3671-B,T2F(J

    产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors

    2020-11-5
  • 2SC2334中文资料

    2SC2334中文资料

    2019-2-18
  • 2SC2859中文资料

    2SC2859中文资料

    2019-2-18