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2SC3332晶体管资料
2SC3332别名：2SC3332三极管、2SC3332晶体管、2SC3332晶体三极管
2SC3332生产厂家：日本三洋公司
2SC3332制作材料：Si-NPN
2SC3332性质：通用型 （Uni）
2SC3332封装形式：直插封装
2SC3332极限工作电压：180V
2SC3332最大电流允许值：0.7A
2SC3332最大工作频率：120MHZ
2SC3332引脚数：3
2SC3332最大耗散功率：0.7W
2SC3332放大倍数：
2SC3332图片代号：A-20
2SC3332vtest：180
2SC3332htest：120000000
- 2SC3332atest：0.7
2SC3332wtest：0.7
2SC3332代换 2SC3332用什么型号代替：2SC2383,2SC4612,2SD1526,3DA88C,
2SC3332价格
参考价格：￥1.0042
型号：2SC3332S 品牌：ON 备注：这里有2SC3332多少钱，2025年最近7天走势，今日出价，今日竞价，2SC3332批发/采购报价，2SC3332行情走势销售排行榜，2SC3332报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3332 | High-Voltage Switching Applications High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. | SANYO 三洋 |   | |
2SC3332 | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | |
2SC3332 | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | |
2SC3332 | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | |
2SC3332 | High-Voltage Switching Applications 文件：103.04 Kbytes Page：4 Pages | SANYO 三洋 | | |
2SC3332 | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP | ONSEMI 安森美半导体 | | |
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
High-Voltage Switching Applications 文件：103.04 Kbytes Page：4 Pages | SANYO 三洋 | | ||
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | |
2SC3332产品属性
- 类型
描述
- 型号
2SC3332
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
High-Voltage Switching Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
9250 |
原装现货,当天可交货,原型号开票 |
|||
SANYO |
11+ |
TO-92 |
1188 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
23+ |
TO92 |
5406 |
正规渠道,只有原装! |
|||
ON/安森美 |
25+ |
TO-92 |
860000 |
明嘉莱只做原装正品现货 |
|||
onsemi |
25+ |
TO-226-3 TO-92-3(TO-226AA) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
SANYO/三洋 |
18+ |
TO92 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
24+ |
4500 |
||||||
ON |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
2447 |
TO92 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
2SC3332芯片相关品牌
2SC3332规格书下载地址
2SC3332参数引脚图相关
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2SC3332数据表相关新闻
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2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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