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2SC3332T价格
参考价格：￥1.0042
型号：2SC3332T-AA 品牌：ON 备注：这里有2SC3332T多少钱，2025年最近7天走势，今日出价，今日竞价，2SC3332T批发/采购报价，2SC3332T行情走势销售排行榜，2SC3332T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3332T | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 |   | |
2SC3332T | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | |
2SC3332T | Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | |
2SC3332T | 封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
High-Voltage Switching Applications High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. | SANYO 三洋 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
High-Voltage Switching Applications 文件：103.04 Kbytes Page：4 Pages | SANYO 三洋 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP Features • Hgih breakdown voltage • Excellent hFE linearity • Wide SOA and highly resistant to breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 160V 0.7A 3NP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | |
2SC3332T产品属性
- 类型
描述
- 型号
2SC3332T
- 功能描述
两极晶体管 - BJT BIP NPN 0.7A 160V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
23+ |
TO92 |
50000 |
全新原装正品现货,支持订货 |
|||
JXK/杰信科 |
23+ |
TO-92 |
2999997 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TOSHIBA |
TO-92L |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
HITACHI/日立 |
23+ |
SOT-89 |
24190 |
原装正品代理渠道价格优势 |
|||
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
23+ |
NA |
3000 |
全新原装正品!一手货源价格优势! |
|||
TOSHIBA |
24+ |
TO-92 |
65200 |
一级代理/放心采购 |
|||
ON/安森美 |
25+ |
TO-92 |
860000 |
明嘉莱只做原装正品现货 |
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2SC3332T规格书下载地址
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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DdatasheetPDF页码索引
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