2SC332晶体管资料

  • 2SC332别名:2SC332三极管、2SC332晶体管、2SC332晶体三极管

  • 2SC332生产厂家:日本冲电气工业股份公司

  • 2SC332制作材料:Si-NPN

  • 2SC332性质:射频/高频放大 (HF)_开关管 (S)

  • 2SC332封装形式:直插封装

  • 2SC332极限工作电压:30V

  • 2SC332最大电流允许值:0.2A

  • 2SC332最大工作频率:450MHZ

  • 2SC332引脚数:3

  • 2SC332最大耗散功率:0.15W

  • 2SC332放大倍数

  • 2SC332图片代号:D-13

  • 2SC332vtest:30

  • 2SC332htest:450000000

  • 2SC332atest:0.2

  • 2SC332wtest:0.15

  • 2SC332代换 2SC332用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,2N2369(A),2N2369(),

2SC332价格

参考价格:¥0.4191

型号:2SC3324-BL(TE85L,F 品牌:Toshiba 备注:这里有2SC332多少钱,2025年最近7天走势,今日出价,今日竞价,2SC332批发/采购报价,2SC332行情走势销售排行榜,2SC332报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Highspeedswitchingtransistor

[COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

SUPERHIGHSPEEDSWITCHINGTRANSISTORS

[Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

HIGHVOLTAGEHIGHSPEEDSWITCHING

HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNtriplediffusionplanartransistor

FEATURES •High-speedswitching •Highcollectortobasevoltage,VCBO •SatisfactorylinearityoffowardcurrenttransferratiohFE •TO-3Ppackagewhichcanbeinstalledtotheheatsinkwithonescrew APPLICATIONS •Switchingregulatorandgeneralpurpose •Ultrasonicgen

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

HIGHVOLTAGEHIGHSPEEDSWITCHING

HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SUPERHIGHSPEEDSWITCHINGTRANSISTORS

[Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

Highspeedswitchingtransistor

[COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

SiliconNPNTripleDiffused

Application Highvoltage,highspeedandhighpowerswitching

HitachiHitachi Semiconductor

日立日立公司

Hitachi

PowerBipolarTransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Highvoltage •Highspeed APPLICATIONS •Highpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Highvoltage •Highspeed APPLICATIONS •Highpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNEpitaxial

Features HighvoltageVCEO=120V HighhFE.hFE=200to700 Lownoise. Smallpackage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNEPITAXIALTYPE(AUDIOFREQUENCYLOWNOISEAMPLIFIERAPPLICATIONS)

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowPowerAmplifierApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxial

Features ●ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA). ●Highvoltage:VCEO=50V(min). ●Smallpackage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNEPITAXIALTYPE(AUDIOFREQUENCYSOWPOWER,DRIVERSTAGEAMPLIFIER,SWITCHINGAPPLICATIONS)

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyLowPowerAmplifierApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxial

Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1Ω(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=200~1200. ●Smallpackage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS)

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

MINIPACKAGESERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

FORMUTINGANDSWITCHINGAPPLICATIONS

FORΜUTINGANDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS)

FORΜUTINGANDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

FORMUTINGANDSWITCHINGAPPLICATIONS

FORΜUTINGANDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features LowVCE(sat)voltage:VCE(sat)=0.5V(MAX.)(IC=1A),Highspeedswitchingtime:tstg=1.0μs(Typ.) complementarypairwith2SA1315. Applications PowerAmplifierswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

NPNEPITAXIALTYPE(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1315

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1315

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNEPITAXIALTYPE(FORLOWNOISEAUDIOAMPLIFIERAPPLICATIONSANDRECOMMENDEDFORTHEFIRSTSTAGESOFMCHIADAMPLIFIERS)

ForLowNoiseAudioAmplifierApplicationsandRecommendedforTheFirstStagesofMCHeadAmplifiers •Verylownoiseintheregionoflowsignalsourceimpedanceequivalentinputnoisevoltage:En=0.6nV/Hz1/2(typ.) •Lowpulsenoise.Low1/fnoise •Lowbasespreadingresistance:

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRIPLEDIFFUSEDPLANERTYPEHIGHVOLTAGEHIGHSPEEDSWITCHING

文件:109.67 Kbytes Page:3 Pages

FujiFuji Electric

富士电机富士电机株式会社

Fuji

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:104.95 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNtransistorinaTO-3PPlasticPackage.

文件:1.035579 Mbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:197.06 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNPowerTransistors

文件:211.84 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:193.99 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:104.95 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:193.99 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:197.06 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:197.06 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:197.06 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:197.06 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:197.06 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:197.06 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件:104.95 Kbytes Page:5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
更新时间:2025-7-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
25+
SOT-23
54558
百分百原装现货 实单必成 欢迎询价
原装GC
23+
SOT-23
5000
专注配单,只做原装进口现货
TOSHIBA
23+
SOT23
28989
专业代理原装现货,特价热卖!
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TOSHIBA
2020+
SOT23
2340
百分百原装正品 真实公司现货库存 本公司只做原装 可
TOSHIBA/东芝
24+
SOT23
503340
免费送样原盒原包现货一手渠道联系
TOSHIBA(东芝)
24+
N/A
7492
原厂可订货,技术支持,直接渠道。可签保供合同
TOSHIBA/东芝
21+
SOT-23
33200
优势供应 实单必成 可13点增值税
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
东芝
2014+
7900
公司原装现货常备库存!

2SC332芯片相关品牌

  • ABRACON
  • AD
  • BARRY
  • HAMMOND
  • HMSEMI
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

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