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2SC332晶体管资料

2SC332别名：2SC332三极管、2SC332晶体管、2SC332晶体三极管
2SC332生产厂家：日本冲电气工业股份公司
2SC332制作材料：Si-NPN
2SC332性质：射频/高频放大（HF）_开关管（S）
2SC332封装形式：直插封装
2SC332极限工作电压：30V
2SC332最大电流允许值：0.2A
2SC332最大工作频率：450MHZ
2SC332引脚数：3
2SC332最大耗散功率：0.15W
2SC332放大倍数：
2SC332图片代号：D-13
2SC332vtest：30
2SC332htest：450000000
2SC332atest：0.2
2SC332wtest：0.15

2SC332代换 2SC332用什么型号代替：BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,2N2369(A),2N2369(),

2SC332价格

参考价格：￥0.4191

型号：2SC3324-BL(TE85L,F 品牌：Toshiba 备注：这里有2SC332多少钱，2026年最近7天走势，今日出价，今日竞价，2SC332批发/采购报价，2SC332行情走势销售排行榜，2SC332报价。

型号	功能描述	生产厂家企业	LOGO
2SC3320	High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC3320	SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC3320	HIGH VOLTAGE HIGH SPEED SWITCHING HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability	UTC 友顺	UTC
2SC3320	Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers	SAVANTIC	SAVANTIC
2SC3320	Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers	ISC 无锡固电	ISC
2SC3320B	Silicon NPN triple diffusion planar transistor FEATURES • High-speed switching • High collector to base voltage, VCBO • Satisfactory linearity of foward current transfer ratio hFE • TO-3P package which can be installed to the heat sink with one screw APPLICATIONS • Switching regulator and general purpose • Ultrasonic gen	NELLSEMI 尼尔半导体	NELLSEMI
2SC3320L-T3P-F-T	HIGH VOLTAGE HIGH SPEED SWITCHING HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability	UTC 友顺	UTC
2SC3320-T3P-F-T	HIGH VOLTAGE HIGH SPEED SWITCHING HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability	UTC 友顺	UTC
2SC3321	SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC3321	High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC3322	Silicon NPN Triple Diffused Application High voltage, high speed and high power switching	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SC3322	Power Bipolar Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SC3322	Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • High voltage • High speed APPLICATIONS • High power switching applications	ISC 无锡固电	ISC
2SC3322	Silicon NPN Power Transistors DESCRIPTION • With TO-3P(I) package • High voltage • High speed APPLICATIONS • High power switching applications	SAVANTIC	SAVANTIC
2SC3324	Silicon NPN Epitaxial Features High voltageVCEO=120V High hFE.hFE=200 to 700 Low noise. Small package.	KEXIN 科信电子	KEXIN
2SC3324	NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3324	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3324	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3324-BL	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3324-GR	Audio Frequency Low Noise Amplifier Applications Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3325	Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA) • High voltage: VCEO= 50 V (min) • Complementary to 2SA1313 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3325	Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA) • High voltage: VCEO= 50 V (min) • Complementary to 2SA1313 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3325	Audio Frequency Low Power Amplifier Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA) • High voltage: VCEO= 50 V (min) • Complementary to 2SA1313 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3325	Silicon NPN Epitaxial Features ● Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). ● High voltage: VCEO = 50 V (min). ● Small package.	KEXIN 科信电子	KEXIN
2SC3325	NPN EPITAXIAL TYPE (AUDIO FREQUENCY SOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA) • High voltage: VCEO= 50 V (min) • Complementary to 2SA1313 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3325O	Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA) • High voltage: VCEO= 50 V (min) • Complementary to 2SA1313 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3325Y	Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA) • High voltage: VCEO= 50 V (min) • Complementary to 2SA1313 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3325-Y	Audio Frequency Low Power Amplifier Applications Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFElinearity : hFE (2)= 25 (min) (VCE= 6 V, IC= 400 mA) • High voltage: VCEO= 50 V (min) • Complementary to 2SA1313 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3326	For Muting and Switching Applications For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3326	For Muting and Switching Applications For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3326	Silicon NPN Epitaxial Features ● High emitter-base voltage: VEBO = 25 V (min). ● High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). ● Low on resistance: RON = 1 Ω(typ.) (IB = 5 mA). ● High DC current gain: hFE = 200~1200. ● Small package.	KEXIN 科信电子	KEXIN
2SC3326	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3326	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications  AEC-Q101 Qualified (Note1).  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package	TOSHIBA 东芝	TOSHIBA
2SC3326_V01	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications  AEC-Q101 Qualified (Note1).  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package	TOSHIBA 东芝	TOSHIBA
2SC3326A	For Muting and Switching Applications For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3326-A,LFT	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications  AEC-Q101 Qualified (Note1).  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package	TOSHIBA 东芝	TOSHIBA
2SC3326-B	For Muting and Switching Applications For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package	TOSHIBA 东芝	TOSHIBA
2SC3327	MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge	TOSHIBA 东芝	TOSHIBA
2SC3327	FOR MUTING AND SWITCHING APPLICATIONS FOR ΜUTING AND SWITCHING APPLICATIONS	TOSHIBA 东芝	TOSHIBA
2SC3327	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) FOR ΜUTING AND SWITCHING APPLICATIONS	TOSHIBA 东芝	TOSHIBA
2SC3327-A	FOR MUTING AND SWITCHING APPLICATIONS FOR ΜUTING AND SWITCHING APPLICATIONS	TOSHIBA 东芝	TOSHIBA
2SC3328	Silicon NPN transistor in a TO-92LM Plastic Package Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low VCE(sat) voltage: VCE(sat)=0.5V(MAX.)(IC=1A),High speed switching time: tstg=1.0μs(Typ.) complementary pair with 2SA1315. Applications Power Amplifier switching applications.	FOSHAN 蓝箭电子	FOSHAN
2SC3328	NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1315	TOSHIBA 东芝	TOSHIBA
2SC3328-Y	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1315	TOSHIBA 东芝	TOSHIBA
2SC3329	NPN EPITAXIAL TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HIAD AMPLIFIERS) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) • Low pulse noise. Low 1/f noise • Low base spreading resistance:	TOSHIBA 东芝	TOSHIBA
2SC3320	TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING 文件：109.67 Kbytes Page：3 Pages	FUJI 富士通	FUJI
2SC3320	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：104.95 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320	Silicon NPN transistor in a TO-3P Plastic Package. 文件：1.035579 Mbytes Page：6 Pages	FOSHAN 蓝箭电子	FOSHAN
2SC3320	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：197.06 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320	Silicon NPN Power Transistors 文件：211.84 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SC3320	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：193.99 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320	功率开关晶体管	THUNDERSOFT 中科创达	THUNDERSOFT
2SC3320	双极晶体管	FOSHAN 蓝箭电子	FOSHAN
2SC3320	NPN Power Transistor	MCPL	MCPL
2SC3320_10	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：104.95 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320_11	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：193.99 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320_14	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：197.06 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320_15	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：197.06 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320L-A-T3P-T	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：197.06 Kbytes Page：5 Pages	UTC 友顺	UTC
2SC3320L-B-T3P-T	HIGH VOLTAGE HIGH SPEED SWITCHING 文件：197.06 Kbytes Page：5 Pages	UTC 友顺	UTC

2SC332供应商更多...

更新时间：2026-1-27 20:38:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	2SC3325-Y(TE85R,F)	TOSHIBA	05+PB	SOT23	3000	全新原装进口自己库存优势	询价
深圳市凌旭科技有限公司	2SC3325-Y	TOSHIBA/东芝	21+	SOT23	3000		询价
深圳市赛美科科技有限公司	2SC3325-Y(TE85RF)	TOSHIBA		PBFREE	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市鸿昌盛电子科技有限公司	2SC3325	东芝	25+		7900	公司原装现货常备库存!	询价
深圳市正纳电子有限公司	2SC3325-Y	TOSHIBA(东芝)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
洪芯国际半导体（深圳）有限公司	2SC3325-Y(TE85LF)	TOSHIBA	26+	DIP8	86720	全新原装正品价格最实惠假一赔百	询价
深圳市英科美电子有限公司	2SC3325-Y,LF(B	TOSHIBA/东芝	2223+	SOT-23-3	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市一线半导体有限公司	2SC3325-O	TOSHIBA	24+	SOT-23	6200	新进库存/原装	询价
深圳市美思瑞电子科技有限公司	2SC3325-Y	TOSHIBA/东芝	22+	SOT23	6000	现货,原厂原装假一罚十!	询价
深圳市科恒伟业电子有限公司	2SC3325-Y	TOSHIBA/东芝	2450+	SOT23	8850	只做原装正品假一赔十为客户做到零风险!!	询价

2SC332芯片相关品牌

2SC332规格书下载地址

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2SC332数据表相关新闻

2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-31
2SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-23
2SC380TM-O
只做原装假一赔十
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产品属性属性值搜索类似制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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2SC332晶体管资料

2SC332价格

2SC332供应商更多...

2SC332芯片相关品牌

2SC332规格书下载地址

2SC332参数引脚图相关

2SC332数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

2SC3671-B,T2F(J

2SC2334中文资料

2SC2859中文资料

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