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2SC332晶体管资料
2SC332别名:2SC332三极管、2SC332晶体管、2SC332晶体三极管
2SC332生产厂家:日本冲电气工业股份公司
2SC332制作材料:Si-NPN
2SC332性质:射频/高频放大 (HF)_开关管 (S)
2SC332封装形式:直插封装
2SC332极限工作电压:30V
2SC332最大电流允许值:0.2A
2SC332最大工作频率:450MHZ
2SC332引脚数:3
2SC332最大耗散功率:0.15W
2SC332放大倍数:
2SC332图片代号:D-13
2SC332vtest:30
2SC332htest:450000000
- 2SC332atest:0.2
2SC332wtest:0.15
2SC332代换 2SC332用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,2N2369(A),2N2369(),
2SC332价格
参考价格:¥0.4191
型号:2SC3324-BL(TE85L,F 品牌:Toshiba 备注:这里有2SC332多少钱,2025年最近7天走势,今日出价,今日竞价,2SC332批发/采购报价,2SC332行情走势销售排行榜,2SC332报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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Highspeedswitchingtransistor [COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
SUPERHIGHSPEEDSWITCHINGTRANSISTORS [Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNtriplediffusionplanartransistor FEATURES •High-speedswitching •Highcollectortobasevoltage,VCBO •SatisfactorylinearityoffowardcurrenttransferratiohFE •TO-3Ppackagewhichcanbeinstalledtotheheatsinkwithonescrew APPLICATIONS •Switchingregulatorandgeneralpurpose •Ultrasonicgen | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SUPERHIGHSPEEDSWITCHINGTRANSISTORS [Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Highspeedswitchingtransistor [COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
SiliconNPNTripleDiffused Application Highvoltage,highspeedandhighpowerswitching | HitachiHitachi Semiconductor 日立日立公司 | |||
PowerBipolarTransistors
| ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3P(I)package •Highvoltage •Highspeed APPLICATIONS •Highpowerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3P(I)package •Highvoltage •Highspeed APPLICATIONS •Highpowerswitchingapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxial Features HighvoltageVCEO=120V HighhFE.hFE=200to700 Lownoise. Smallpackage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNEPITAXIALTYPE(AUDIOFREQUENCYLOWNOISEAMPLIFIERAPPLICATIONS) AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowNoiseAmplifierApplications AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowNoiseAmplifierApplications AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowNoiseAmplifierApplications AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowNoiseAmplifierApplications AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowPowerAmplifierApplications AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxial Features ●ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA). ●Highvoltage:VCEO=50V(min). ●Smallpackage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNEPITAXIALTYPE(AUDIOFREQUENCYSOWPOWER,DRIVERSTAGEAMPLIFIER,SWITCHINGAPPLICATIONS) AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyLowPowerAmplifierApplications AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxial Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1Ω(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=200~1200. ●Smallpackage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS) ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
MINIPACKAGESERIES Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
FORMUTINGANDSWITCHINGAPPLICATIONS FORΜUTINGANDSWITCHINGAPPLICATIONS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS) FORΜUTINGANDSWITCHINGAPPLICATIONS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
FORMUTINGANDSWITCHINGAPPLICATIONS FORΜUTINGANDSWITCHINGAPPLICATIONS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNtransistorinaTO-92LMPlasticPackage Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features LowVCE(sat)voltage:VCE(sat)=0.5V(MAX.)(IC=1A),Highspeedswitchingtime:tstg=1.0μs(Typ.) complementarypairwith2SA1315. Applications PowerAmplifierswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
NPNEPITAXIALTYPE(POWERAMPLIFIER,SWITCHINGAPPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1315 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1315 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNEPITAXIALTYPE(FORLOWNOISEAUDIOAMPLIFIERAPPLICATIONSANDRECOMMENDEDFORTHEFIRSTSTAGESOFMCHIADAMPLIFIERS) ForLowNoiseAudioAmplifierApplicationsandRecommendedforTheFirstStagesofMCHeadAmplifiers •Verylownoiseintheregionoflowsignalsourceimpedanceequivalentinputnoisevoltage:En=0.6nV/Hz1/2(typ.) •Lowpulsenoise.Low1/fnoise •Lowbasespreadingresistance: | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TRIPLEDIFFUSEDPLANERTYPEHIGHVOLTAGEHIGHSPEEDSWITCHING 文件:109.67 Kbytes Page:3 Pages | FujiFuji Electric 富士电机富士电机株式会社 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:104.95 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNtransistorinaTO-3PPlasticPackage. 文件:1.035579 Mbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:197.06 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNPowerTransistors 文件:211.84 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:193.99 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:104.95 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:193.99 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:197.06 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:197.06 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:197.06 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:197.06 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:197.06 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:197.06 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGEHIGHSPEEDSWITCHING 文件:104.95 Kbytes Page:5 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
25+ |
SOT-23 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
原装GC |
23+ |
SOT-23 |
5000 |
专注配单,只做原装进口现货 |
|||
TOSHIBA |
23+ |
SOT23 |
28989 |
专业代理原装现货,特价热卖! |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TOSHIBA |
2020+ |
SOT23 |
2340 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TOSHIBA/东芝 |
24+ |
SOT23 |
503340 |
免费送样原盒原包现货一手渠道联系 |
|||
TOSHIBA(东芝) |
24+ |
N/A |
7492 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TOSHIBA/东芝 |
21+ |
SOT-23 |
33200 |
优势供应 实单必成 可13点增值税 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
东芝 |
2014+ |
7900 |
公司原装现货常备库存! |
2SC332规格书下载地址
2SC332参数引脚图相关
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- 2SC3311(A)
- 2SC3311
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- 2SC331
- 2SC3309
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- 2SC3302
- 2SC3300
- 2SC3299
- 2SC3298
- 2SC3297
- 2SC3296
- 2SC3295
- 2SC3294
2SC332数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
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- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102