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位置：首页 > IC中文资料第6654页 > 2SC332

2SC332晶体管资料

  • 2SC332别名：2SC332三极管、2SC332晶体管、2SC332晶体三极管

  • 2SC332生产厂家：日本冲电气工业股份公司

  • 2SC332制作材料：Si-NPN

  • 2SC332性质：射频/高频放大 （HF）_开关管 （S）

  • 2SC332封装形式：直插封装

  • 2SC332极限工作电压：30V

  • 2SC332最大电流允许值：0.2A

  • 2SC332最大工作频率：450MHZ

  • 2SC332引脚数：3

  • 2SC332最大耗散功率：0.15W

  • 2SC332放大倍数：

  • 2SC332图片代号：D-13

  • 2SC332vtest：30

  • 2SC332htest：450000000

  • 2SC332atest：0.2

  • 2SC332wtest：0.15

  • 2SC332代换 2SC332用什么型号代替：BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,2N2369(A),2N2369(),

2SC332价格

参考价格：￥0.4191

型号：2SC3324-BL(TE85L,F 品牌：Toshiba 备注：这里有2SC332多少钱，2025年最近7天走势，今日出价，今日竞价，2SC332批发/采购报价，2SC332行情走势销售排行榜，2SC332报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC3320

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC3320

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highspeedswitching ·Highreliability APPLICATIONS ·Switchingregulators ·Ultrasonicgenerators ·Highfrequencyinverters ·Generalpurposepoweramplifiers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3320

Highspeedswitchingtransistor

[COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1
2SC3320

SUPERHIGHSPEEDSWITCHINGTRANSISTORS

[Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SC3320

HIGHVOLTAGEHIGHSPEEDSWITCHING

HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320B

SiliconNPNtriplediffusionplanartransistor

FEATURES •High-speedswitching •Highcollectortobasevoltage,VCBO •SatisfactorylinearityoffowardcurrenttransferratiohFE •TO-3Ppackagewhichcanbeinstalledtotheheatsinkwithonescrew APPLICATIONS •Switchingregulatorandgeneralpurpose •Ultrasonicgen

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI
2SC3320L-T3P-F-T

HIGHVOLTAGEHIGHSPEEDSWITCHING

HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320-T3P-F-T

HIGHVOLTAGEHIGHSPEEDSWITCHING

HIGHVOLTAGEHIGHSPEEDSWITCHING FEATURES *Highvoltage,highspeedswitching *Highreliability

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3321

SUPERHIGHSPEEDSWITCHINGTRANSISTORS

[Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SC3321

Highspeedswitchingtransistor

[COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1
2SC3322

SiliconNPNTripleDiffused

Application Highvoltage,highspeedandhighpowerswitching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SC3322

PowerBipolarTransistors

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1
2SC3322

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Highvoltage •Highspeed APPLICATIONS •Highpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3322

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Highvoltage •Highspeed APPLICATIONS •Highpowerswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC3324

SiliconNPNEpitaxial

Features HighvoltageVCEO=120V HighhFE.hFE=200to700 Lownoise. Smallpackage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3324

NPNEPITAXIALTYPE(AUDIOFREQUENCYLOWNOISEAMPLIFIERAPPLICATIONS)

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3324

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3324

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3324-BL

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3324-GR

AudioFrequencyLowNoiseAmplifierApplications

AudioFrequencyLowNoiseAmplifierApplications •Highvoltage:VCEO=120V •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF(2)=0.2dB(typ.),3dB(max) •Complementaryto2SA1312 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3325

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3325

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3325

NPNEPITAXIALTYPE(AUDIOFREQUENCYSOWPOWER,DRIVERSTAGEAMPLIFIER,SWITCHINGAPPLICATIONS)

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3325

SiliconNPNEpitaxial

Features ●ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA). ●Highvoltage:VCEO=50V(min). ●Smallpackage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3325

AudioFrequencyLowPowerAmplifierApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3325O

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3325Y

AudioFrequencyLowPowerAmplifierApplicationsDriverStageAmplifierApplicationsSwitchingApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3325-Y

AudioFrequencyLowPowerAmplifierApplications

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)(VCE=6V,IC=400mA) •Highvoltage:VCEO=50V(min) •Complementaryto2SA1313 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326

SiliconNPNEpitaxial

Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1Ω(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=200~1200. ●Smallpackage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3326

NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS)

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326_V01

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326A

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326-A,LFT

TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess)

ForMutingandSwitchingApplications AEC-Q101Qualified(Note1). Highemitter-basevoltage:VEBO=25V HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) Lowonresistance:RON=1Ω(typ.)(IB=5mA) HighDCcurrentgain:hFE=200to1200 Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3326-B

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3327

MINIPACKAGESERIES

Application GeneralPurpose> LowNoise HighVoltage HighCurrent HighCurrent LowImpedanceLowNoise(NEW AudioDrive&Out NEW HighB Muting&SW FMRF,MIXOSC AMCONV.FM/AMIF AMFF,CONVIF FM/AMRF,MIXOSC Application GeneralPurpose HighIYfslLowNoise AnalogSW&Ge

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3327

NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS)

FORΜUTINGANDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3327

FORMUTINGANDSWITCHINGAPPLICATIONS

FORΜUTINGANDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3327-A

FORMUTINGANDSWITCHINGAPPLICATIONS

FORΜUTINGANDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3328

NPNEPITAXIALTYPE(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1315

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3328

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features LowVCE(sat)voltage:VCE(sat)=0.5V(MAX.)(IC=1A),Highspeedswitchingtime:tstg=1.0μs(Typ.) complementarypairwith2SA1315. Applications PowerAmplifierswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC3328-Y

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1315

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3329

NPNEPITAXIALTYPE(FORLOWNOISEAUDIOAMPLIFIERAPPLICATIONSANDRECOMMENDEDFORTHEFIRSTSTAGESOFMCHIADAMPLIFIERS)

ForLowNoiseAudioAmplifierApplicationsandRecommendedforTheFirstStagesofMCHeadAmplifiers •Verylownoiseintheregionoflowsignalsourceimpedanceequivalentinputnoisevoltage:En=0.6nV/Hz1/2(typ.) •Lowpulsenoise.Low1/fnoise •Lowbasespreadingresistance:

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3320

TRIPLEDIFFUSEDPLANERTYPEHIGHVOLTAGEHIGHSPEEDSWITCHING

文件：109.67 Kbytes Page：3 Pages

FujiFuji Electric

富士电机富士电机株式会社

Fuji
2SC3320

SiliconNPNtransistorinaTO-3PPlasticPackage.

文件：1.035579 Mbytes Page：6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC3320

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：197.06 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320

SiliconNPNPowerTransistors

文件：211.84 Kbytes Page：4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC3320

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：193.99 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：104.95 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320_10

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：104.95 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320_11

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：193.99 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320_14

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：197.06 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320_15

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：197.06 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320L-A-T3P-T

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：197.06 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320L-B-T3P-T

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：197.06 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320L-C-T3N-T

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：197.06 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320L-D-T3N-T

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：197.06 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SC3320L-T3P-T

HIGHVOLTAGEHIGHSPEEDSWITCHING

文件：104.95 Kbytes Page：5 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2SC332供应商更多...

更新时间：2025-7-30 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
2SC3320
FJUI
23+
NA
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
2SC3320SC--找顺乐
FUJI实际数
24+
TO-3P
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市科芯源微电子有限公司
2SC3320
FUJITSU/富士通
25+
TO-3P
54558
百分百原装现货 实单必成 欢迎询价
询价
深圳市中赛美电子科技有限公司
2SC3320
UTC
23+
TO-3P
12700
买原装认准中赛美
询价
深圳市威雅利发展有限公司
2SC3320-S33PP
FUJI
21+
TO-3P
2400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
中天科工半导体（深圳）有限公司
2SC3320
FUJITSU/富士通
25+
TO-3P
32360
FUJITSU/富士通全新特价2SC3320即刻询购立享优惠#长期有货
询价
深圳市明嘉莱科技有限公司
2SC3320
FUJITSU/富士通
24+
TO 3P
157152
明嘉莱只做原装正品现货
询价
千层芯半导体(深圳)有限公司
2SC3320SC
FUJI
24+
TO-3P
3000
全新原装环保现货
询价
深圳市科恒伟业电子有限公司
2SC3320
FUJI
24+
TO-3P
8500
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市富利微电子科技有限公司
2SC3320SC
FUJITSU/富士通
24+
TO-3P
30000
房间原装现货特价热卖,有单详谈
询价

2SC332芯片相关品牌

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