For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

Silicon NPN Epitaxial

Features ● High emitter-base voltage: VEBO = 25 V (min). ● High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). ● Low on resistance: RON = 1 Ω(typ.) (IB = 5 mA). ● High DC current gain: hFE = 200~1200. ● Small package.

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA) • High DC current gain: hFE= 200~1200 • Small package

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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Silicon NPN transistor in a SOT-23 Plastic Package

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 0.3A TO236 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个