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2SC327晶体管资料
2SC327别名:2SC327三极管、2SC327晶体管、2SC327晶体三极管
2SC327生产厂家:日本冲电气工业股份公司
2SC327制作材料:Si-NPN
2SC327性质:超高频/特高频 (UHF)
2SC327封装形式:直插封装
2SC327极限工作电压:30V
2SC327最大电流允许值:0.05A
2SC327最大工作频率:1GHZ
2SC327引脚数:3
2SC327最大耗散功率:0.25W
2SC327放大倍数:
2SC327图片代号:D-13
2SC327vtest:30
2SC327htest:1000000000
- 2SC327atest:0.05
2SC327wtest:0.25
2SC327代换 2SC327用什么型号代替:BF180,BF362,BF363,BF357,BF377,BFR37,BFW30,BFX73,2SC2570(A),3DG44A,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
HighVoltageAmp.TripleDiffusedPlanarNPNSiliconTransistors HighVoltageAmp. | ROHMRohm 罗姆罗姆半导体集团 | |||
ChromaAmplifierTransistor Features 1)Highbreakdownvoltage.(BVCEO=300V) 2)Lowcollectoroutputcapacitance.(Typ.3pFatVCB=30V) 3)Idealforchromacircuit. | ROHMRohm 罗姆罗姆半导体集团 | |||
ChromaAmplifierTransistor(300V,0.1A) Features 1)Highbreakdownvoltage.(BVCEO=300V) 2)Lowcollectoroutputcapacitance.(Typ.3pFatVCB=30V) 3)Idealforchromacircuit. | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=300V(Min) •GoodLinearityofhFE •LowSaturationVoltage APPLICATIONS •DesignedforuseincolorTVchromaoutputandvideosignalamplification. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
TripleDiffusedPlanarNPNSiliconTransistor MediumPowerAmp. TripleDiffusedPlanarNPNSiliconTransistor Features 1)Highbreakdownvoltage:BVCEO=300V 2)Smallcollectoroutputcapacitance. 3)IdealforuseincolorTVchromaoutputandvideosignalamplification. | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Highbreakdownvoltage APPLICATIONS ·Forpoweramplification | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Highbreakdownvoltage APPLICATIONS ·Forpoweramplification | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highcurrent ·Fastswitchingspeed ·Wideareaofsafeoperation APPLICATIONS ·400V/10Aswitchingregulatorapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highcurrent ·Fastswitchingspeed ·Wideareaofsafeoperation APPLICATIONS ·400V/10Aswitchingregulatorapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ForSwitchingRegulators 400V/10ASwitchingRegulatorApplications Features •Highbreakdownvoltage,highcurrent. •WideASO. •Fastswitchingspeed. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPNEPITAXIALTYPE(STOROBOFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140~600(VCE=1V,IC=0.5A) :hFE(2)=70(min),200(typ.)(VCE=1V,IC=2A) •Lowsaturationvoltage:VCE(sat)=0.5V(max) (IC=2A,IB=50 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNTransistorPlastic-EncapsulateTransistors FEATURES HighDCcurrentgainandexcellenthFElinearity. Lowsaturationvoltage. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
TripleDiffusedPlanarNPNSiliconTransistor 文件:218.89 Kbytes Page:3 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconNPNPowerTransistors 文件:101.81 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors 文件:211.28 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistor 文件:135.28 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
TRANSISTOR(NPN) 文件:311.87 Kbytes Page:2 Pages | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
TO-92Plastic-EncapsulateTransistors 文件:501.57 Kbytes Page:3 Pages | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
TRANSISTOR(NPN) 文件:125.94 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
NPNPlasticEncapsulatedTransistor 文件:295.39 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SiliconNPNEpitaxialType(PCTprocess)StrobeFlashApplications 文件:335.57 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType(PCTprocess)StrobeFlashApplications 文件:335.57 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNPlasticEncapsulatedTransistor 文件:295.39 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNPlasticEncapsulatedTransistor 文件:295.39 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:364.18 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:364.18 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:364.18 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 10V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:364.18 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 10V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors 文件:364.18 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |
2SC327产品属性
- 类型
描述
- 型号
2SC327
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
High Voltage Amp.Triple Diffused Planar NPN Silicon Transistors
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SANYO/三洋 |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SANYO/三洋 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
|||
SAY |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
24+ |
60000 |
||||||
TOSHIBA |
24+ |
TO-92 |
44300 |
原装进口现货假一罚百 |
|||
SAY |
05+ |
TO-3P |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
sanyo |
24+ |
TO-3PB |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SANYO/三洋 |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
sanyo |
24+ |
TO-3PB |
6540 |
原装现货/欢迎来电咨询 |
|||
SAY |
23+ |
TO-3P |
100 |
全新原装正品现货,支持订货 |
2SC327规格书下载地址
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2SC327数据表相关新闻
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2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
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只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
DdatasheetPDF页码索引
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