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2SC327晶体管资料

  • 2SC327别名:2SC327三极管、2SC327晶体管、2SC327晶体三极管

  • 2SC327生产厂家:日本冲电气工业股份公司

  • 2SC327制作材料:Si-NPN

  • 2SC327性质:超高频/特高频 (UHF)

  • 2SC327封装形式:直插封装

  • 2SC327极限工作电压:30V

  • 2SC327最大电流允许值:0.05A

  • 2SC327最大工作频率:1GHZ

  • 2SC327引脚数:3

  • 2SC327最大耗散功率:0.25W

  • 2SC327放大倍数

  • 2SC327图片代号:D-13

  • 2SC327vtest:30

  • 2SC327htest:1000000000

  • 2SC327atest:0.05

  • 2SC327wtest:0.25

  • 2SC327代换 2SC327用什么型号代替:BF180,BF362,BF363,BF357,BF377,BFR37,BFW30,BFX73,2SC2570(A),3DG44A,

型号 功能描述 生产厂家 企业 LOGO 操作

High Voltage Amp.Triple Diffused Planar NPN Silicon Transistors

High Voltage Amp.

ROHM

罗姆

Chroma Amplifier Transistor

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

ROHM

罗姆

Chroma Amplifier Transistor (300V, 0.1A)

Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

ROHM

罗姆

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) • Good Linearity of hFE • Low Saturation Voltage APPLICATIONS • Designed for use in color TV chroma output and video signal amplification.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Triple Diffused Planar NPN Silicon Transistor

Medium Power Amp. Triple Diffused Planar NPN Silicon Transistor Features 1) High breakdown voltage: BVCEO = 300V 2) Small collector output capacitance. 3) Ideal for use in color TV chroma output and video signal amplification.

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For power amplification

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For power amplification

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high current ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications

SAVANTIC

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high current ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications

ISC

无锡固电

For Switching Regulators

400V/10A Switching Regulator Applications Features • High breakdown voltage, high current. • Wide ASO. • Fast switching speed.

SANYO

三洋

NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFElinearity : hFE (1)= 140~600 (VCE= 1 V, IC= 0.5 A) : hFE (2)= 70 (min), 200 (typ.) (VCE= 1 V, IC= 2 A) • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 2 A, IB= 50

TOSHIBA

东芝

NPN Transistor Plastic-Encapsulate Transistors

FEATURES High DC current gain and excellent hFElinearity. Low saturation voltage.

SECOS

喜可士

NPN Silicon Epitaxial Transistors

Features • High DC Current Gain and excellent hFELinearity hFE(1)=140-600 (VCE=1.0V, IC=0.5A) hFE(2)=70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Lead Free Finish/RoHS Compliant

MCC

NPN Silicon Epitaxial Transistors

Features • High DC Current Gain and excellent hFELinearity hFE(1)=140-600 (VCE=1.0V, IC=0.5A) hFE(2)=70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Lead Free Finish/RoHS Compliant

MCC

NPN Silicon Epitaxial Transistors

Features • High DC Current Gain and excellent hFELinearity hFE(1)=140-600 (VCE=1.0V, IC=0.5A) hFE(2)=70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Lead Free Finish/RoHS Compliant

MCC

NPN Silicon Epitaxial Transistors

Features • High DC Current Gain and excellent hFELinearity hFE(1)=140-600 (VCE=1.0V, IC=0.5A) hFE(2)=70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Lead Free Finish/RoHS Compliant

MCC

Triple Diffused Planar NPN Silicon Transistor

文件:218.89 Kbytes Page:3 Pages

ROHM

罗姆

Chroma Amplifier Transistor(300V,0.1A)

ROHM

罗姆

Triple Diffused Planar NPN Silicon Transistor

ROHM

罗姆

Silicon NPN Power Transistors

文件:101.81 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:211.28 Kbytes Page:4 Pages

SAVANTIC

NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator Applications

ONSEMI

安森美半导体

Silicon NPN Power Transistor

文件:135.28 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (NPN)

文件:311.87 Kbytes Page:2 Pages

KOOCHIN

灏展电子

TO-92 Plastic-Encapsulate Transistors

文件:501.57 Kbytes Page:3 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

文件:125.94 Kbytes Page:1 Pages

WINNERJOIN

永而佳

NPN Plastic Encapsulated Transistor

文件:295.39 Kbytes Page:2 Pages

SECOS

喜可士

Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications

文件:335.57 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications

文件:335.57 Kbytes Page:3 Pages

TOSHIBA

东芝

NPN Plastic Encapsulated Transistor

文件:295.39 Kbytes Page:2 Pages

SECOS

喜可士

NPN Plastic Encapsulated Transistor

文件:295.39 Kbytes Page:2 Pages

SECOS

喜可士

NPN Silicon Epitaxial Transistors

文件:364.18 Kbytes Page:3 Pages

MCC

NPN Silicon Epitaxial Transistors

文件:364.18 Kbytes Page:3 Pages

MCC

NPN Silicon Epitaxial Transistors

文件:364.18 Kbytes Page:3 Pages

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 10V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Silicon Epitaxial Transistors

文件:364.18 Kbytes Page:3 Pages

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 10V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Silicon Epitaxial Transistors

文件:364.18 Kbytes Page:3 Pages

MCC

2SC327产品属性

  • 类型

    描述

  • PCM(W):

    0.75

  • IC(A):

    2

  • VCBO(V):

    30

  • VCEO(V):

    10

  • VEBO(V):

    6

  • hFEMin:

    140

  • hFEMax:

    600

  • hFE@VCE(V):

    1

  • hFE@IC(A):

    0.5

  • VCE(sat)(V):

    0.82

  • VCE(sat)\u001E@IC(A):

    2

  • VCE(sat)\u001E@IB(A):

    0.1

  • Package:

    TO-92

更新时间:2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
25+
TO-3P
45000
SANYO/三洋全新现货2SC3277即刻询购立享优惠#长期有排单订
sanyo
24+
TO-3PB
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
SANYO
23+
TO-3P
1500
绝对全新原装!优势供货渠道!特价!请放心订购!
SANYO/三洋
22+
TO3P
12245
现货,原厂原装假一罚十!
SAY
25+
TO-3P
8000
只有原装
SAY
51+
TO-3P
40
全新 发货1-2天
SANYO/三洋
24+
TO3P
39197
郑重承诺只做原装进口现货
24+
TO-3PN
10000
全新
SAY
24+
TO-3P
5000
全新原装正品,现货销售
SANYO/三洋
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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