2SC327晶体管资料

  • 2SC327别名:2SC327三极管、2SC327晶体管、2SC327晶体三极管

  • 2SC327生产厂家:日本冲电气工业股份公司

  • 2SC327制作材料:Si-NPN

  • 2SC327性质:超高频/特高频 (UHF)

  • 2SC327封装形式:直插封装

  • 2SC327极限工作电压:30V

  • 2SC327最大电流允许值:0.05A

  • 2SC327最大工作频率:1GHZ

  • 2SC327引脚数:3

  • 2SC327最大耗散功率:0.25W

  • 2SC327放大倍数

  • 2SC327图片代号:D-13

  • 2SC327vtest:30

  • 2SC327htest:1000000000

  • 2SC327atest:0.05

  • 2SC327wtest:0.25

  • 2SC327代换 2SC327用什么型号代替:BF180,BF362,BF363,BF357,BF377,BFR37,BFW30,BFX73,2SC2570(A),3DG44A,

型号 功能描述 生产厂家&企业 LOGO 操作

HighVoltageAmp.TripleDiffusedPlanarNPNSiliconTransistors

HighVoltageAmp.

ROHMRohm

罗姆罗姆半导体集团

ROHM

ChromaAmplifierTransistor

Features 1)Highbreakdownvoltage.(BVCEO=300V) 2)Lowcollectoroutputcapacitance.(Typ.3pFatVCB=30V) 3)Idealforchromacircuit.

ROHMRohm

罗姆罗姆半导体集团

ROHM

ChromaAmplifierTransistor(300V,0.1A)

Features 1)Highbreakdownvoltage.(BVCEO=300V) 2)Lowcollectoroutputcapacitance.(Typ.3pFatVCB=30V) 3)Idealforchromacircuit.

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=300V(Min) •GoodLinearityofhFE •LowSaturationVoltage APPLICATIONS •DesignedforuseincolorTVchromaoutputandvideosignalamplification.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TripleDiffusedPlanarNPNSiliconTransistor

MediumPowerAmp. TripleDiffusedPlanarNPNSiliconTransistor Features 1)Highbreakdownvoltage:BVCEO=300V 2)Smallcollectoroutputcapacitance. 3)IdealforuseincolorTVchromaoutputandvideosignalamplification.

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Highbreakdownvoltage APPLICATIONS ·Forpoweramplification

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Highbreakdownvoltage APPLICATIONS ·Forpoweramplification

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highcurrent ·Fastswitchingspeed ·Wideareaofsafeoperation APPLICATIONS ·400V/10Aswitchingregulatorapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage,highcurrent ·Fastswitchingspeed ·Wideareaofsafeoperation APPLICATIONS ·400V/10Aswitchingregulatorapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ForSwitchingRegulators

400V/10ASwitchingRegulatorApplications Features •Highbreakdownvoltage,highcurrent. •WideASO. •Fastswitchingspeed.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

NPNEPITAXIALTYPE(STOROBOFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140~600(VCE=1V,IC=0.5A) :hFE(2)=70(min),200(typ.)(VCE=1V,IC=2A) •Lowsaturationvoltage:VCE(sat)=0.5V(max) (IC=2A,IB=50

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTransistorPlastic-EncapsulateTransistors

FEATURES HighDCcurrentgainandexcellenthFElinearity. Lowsaturationvoltage.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSiliconEpitaxialTransistors

Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

Features •HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •LeadFreeFinish/RoHSCompliant

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

TripleDiffusedPlanarNPNSiliconTransistor

文件:218.89 Kbytes Page:3 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconNPNPowerTransistors

文件:101.81 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:211.28 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistor

文件:135.28 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TRANSISTOR(NPN)

文件:311.87 Kbytes Page:2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

TO-92Plastic-EncapsulateTransistors

文件:501.57 Kbytes Page:3 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR(NPN)

文件:125.94 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

NPNPlasticEncapsulatedTransistor

文件:295.39 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SiliconNPNEpitaxialType(PCTprocess)StrobeFlashApplications

文件:335.57 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTprocess)StrobeFlashApplications

文件:335.57 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNPlasticEncapsulatedTransistor

文件:295.39 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNPlasticEncapsulatedTransistor

文件:295.39 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSiliconEpitaxialTransistors

文件:364.18 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

文件:364.18 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

文件:364.18 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 10V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

文件:364.18 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 10V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconEpitaxialTransistors

文件:364.18 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

2SC327产品属性

  • 类型

    描述

  • 型号

    2SC327

  • 制造商

    ROHM

  • 制造商全称

    Rohm

  • 功能描述

    High Voltage Amp.Triple Diffused Planar NPN Silicon Transistors

更新时间:2025-7-6 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SANYO/三洋
22+
TO-3P
25000
只做原装进口现货,专注配单
SAY
1738+
TO-3P
8529
科恒伟业!只做原装正品,假一赔十!
24+
60000
TOSHIBA
24+
TO-92
44300
原装进口现货假一罚百
SAY
05+
TO-3P
40
一级代理,专注军工、汽车、医疗、工业、新能源、电力
sanyo
24+
TO-3PB
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
SANYO/三洋
22+
TO-3P
6000
十年配单,只做原装
sanyo
24+
TO-3PB
6540
原装现货/欢迎来电咨询
SAY
23+
TO-3P
100
全新原装正品现货,支持订货

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  • ANALOGICTECH
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  • NTE
  • P-TEC
  • WECO
  • Yamaha

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