NPN Silicon Epitaxial Transistors

Features • High DC Current Gain and excellent hFELinearity hFE(1)=140-600 (VCE=1.0V, IC=0.5A) hFE(2)=70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Lead Free Finish/RoHS Compliant

NPN Silicon Epitaxial Transistors

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中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 10V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFElinearity : hFE (1)= 140~600 (VCE= 1 V, IC= 0.5 A) : hFE (2)= 70 (min), 200 (typ.) (VCE= 1 V, IC= 2 A) • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 2 A, IB= 50

NPN Transistor Plastic-Encapsulate Transistors

FEATURES High DC current gain and excellent hFElinearity. Low saturation voltage.

Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications

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NPN Plastic Encapsulated Transistor

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.