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2SC32晶体管资料
2SC32(A)别名：2SC32(A)三极管、2SC32(A)晶体管、2SC32(A)晶体三极管
2SC32(A)生产厂家：日本日电公司
2SC32(A)制作材料：Si-NPN
2SC32(A)性质：甚高频 （VHF）
2SC32(A)封装形式：直插封装
2SC32(A)极限工作电压：60V
2SC32(A)最大电流允许值：0.2A
2SC32(A)最大工作频率：200MHZ
2SC32(A)引脚数：3
2SC32(A)最大耗散功率：0.75W
2SC32(A)放大倍数：β>40
2SC32(A)图片代号：C-40
2SC32(A)vtest：60
2SC32(A)htest：200000000
- 2SC32(A)atest：0.2
2SC32(A)wtest：0.75
2SC32(A)代换 2SC32(A)用什么型号代替：BC140,BC141,BC300,BC301,BC302,2N2217,2N3053,3DG130G,
2SC32价格
参考价格：￥12.6935
型号：2SC3263 品牌：Sanken 备注：这里有2SC32多少钱，2025年最近7天走势，今日出价，今日竞价，2SC32批发/采购报价，2SC32行情走势销售排行榜，2SC32报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON POWER TRANSISTOR DESCRIPTION The 2SC3209 is designed for use in TV chroma output circuits and TV horizontal deflection ouptut circuits. | NEC 瑞萨 |   | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High breakdown voltage APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High breakdown voltage APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High breakdown voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emiiter Sustaining Voltage- : VCEO(sus)= 400V(Min.) • Low Collector Saturation Voltage :VCE(sat)=1.0V(Max.)@lc-5A • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emiiter Sustaining Voltage- : VCEo(sus)= 500V(Min.) • Low Collector Saturation Voltage : VcE(Mt)=1.0V(Max.)@lc=3A • High Speed Switching APPLICATIONS • Designed for high speed switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • High VCBO • Low collector saturation voltage APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Low collector-emitter saturation voltage (VCE(sat)) ● Full Pack package for simplified mounting on a heat sink with one screw | Panasonic 松下 | | ||
Silicon NPN Triple-Diffused Junction Mesa Type Silicon NPN Triple-Diffused Junction Mesa Type High Breakdown Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Low collector-emitter saturation voltage (VCE(sat)) ● Full Pack package for simplified mounting on a heat sink with one screw | Panasonic 松下 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Low collector saturation voltage • High VCBO • High speed switching APPLICATIONS • For high speed switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For switching regulator and DC/DC converter applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For switching regulator and DC/DC converter applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For switching regulator and DC/DC converter applications | SAVANTIC | | ||
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE | NEC 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR FOR 860-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE FEATURES • High gain and high power output at 860 MHz Pout = 52 W @ VCC = 28 V, Pin = 10 W, class AB • Push-pull structure allows easy design of wideband amplifier • Internal emitter balance resistor • Internal impedance matching circuit • High reliability due to gold electrodes | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage- :VCE(sat) = 1.0V(Max.)@lc=5A • High Switching Speed APPLICATIONS • Designed for power supply and general purpose power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-247 package • Switching power transistor • High breakdown voltage | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-247 package • Switching power transistor • High breakdown voltage | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High speed,high current • Low saturation voltage APPLICATIONS • For high current high speed,high power applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High speed,high current • Low saturation voltage APPLICATIONS • For high current high speed,high power applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@lc=10A • HighSwitching Speed APPLICATIONS • Designed for power supply and general purpose power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage: VCEO=300V(min) APPLICATIONS ·For color TV chroma output applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage: VCEO=300V(min) APPLICATIONS ·For color TV chroma output applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) • Good Linearity of hFE • Complement to Type 2SA1276 APPLICATIONS • Designed for general purpose applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakddown Voltage : V(BR)CEO= 60V(Min) • Large Current Capability • High Collector PowerDissipation APPLICATIONS • Designedfor B/W TV horizontal deflection output applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High voltage,high speed • Low saturation voltage APPLICATIONS • For high voltage ,high speed and high power switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High voltage,high speed • Low saturation voltage APPLICATIONS • For high voltage ,high speed and high power switching applications | ISC 无锡固电 | | ||
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES: -Excellent Switching Times : tr-1.0μs (Max.), tf-1.0μs (Max.) at Ic=4A -High Collector Breakdown Voltage: VCEO-400V | TOSHIBA 东芝 | | ||
HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: -Low Collector Saturation Voltage : VCE (sat) 0.4V (Max.) (at Ic-3A) -High Speed Switching Time: tstg=1.0μs (Typ.) -Complementary to 25A1279 | TOSHIBA 东芝 | | ||
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) DESCRIPTION 2SC3240 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. APPLICATION Output stage of transmitter in HF band SSB mobile radio sets | Mitsubishi 三菱电机 | | ||
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) DESCRIPTION 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. APPLICATION Output stage of transmitter in HF band SSB mobile radio sets | Mitsubishi 三菱电机 | | ||
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION DESCRIPTION 2SC3243 is a silicon NPN epitaxial type transistor designed for relay drive or power supply application. Complementary with 2SA1238. APPLICATION Relay drive, power supply for audio equipment, VCR. | ISAHAYA 谏早电子 | | ||
T O-92MOD Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High Voltage ● High Collector Current ● Low VCE(sat) ● High Collector Dissipation | JIANGSU 长电科技 | | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
SMALL-SIGNAL TRANSISTOR FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APLLICATION DESCRIPTION 2SC3249 is a silicon NPN triple diffused transistor designed for colour TV chroma output circuit, high voltage, switching circuit application. APPLICATIONS Small type colour TV chroma output circuit, high voltage switching circuit. | ISAHAYA 谏早电子 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For TV video output amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For TV video output amplifier applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Good Linearity of hFE • High Switching Speed • Complement to Type 2SA1288 APPLICATIONS • Various inductance lamp drivers for electrical equipment • Inverters, converters • Power amplifier • Switching regulator, dirver | ISC 无锡固电 | | ||
60V/5A High-Speed Switching Applications 60V/5A High-Speed Switching Applications Features • Low saturation voltage. • Excellent current dependence of hFE. • Short switching time. Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). | SANYO 三洋 | | ||
60V/7A High-Speed Switching Applications 60V/7A High-Speed Switching Applications Features • Low saturation voltage. • Excellent current dependence of hFE. • Short switching time. Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). • | SANYO 三洋 | | ||
60V/10A High-Speed Switching Applications 60V/10A High-Speed Switching Applications Features • Low saturation voltage. • Excellent current dependence of hFE. • Short switching time. Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). • | SANYO 三洋 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1291 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications ·Power amplifications ·Invertrers ,converters | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1291 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications ·Power amplifications ·Invertrers ,converters | ISC 无锡固电 | |
2SC32产品属性
- 类型
描述
- 型号
2SC32
- 功能描述
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
25+ |
TO92 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MITSUBISHI/三菱 |
23+ |
SMD |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MITSUBIS |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
MITSUBISHI/三菱 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MITSUBIS |
1922+ |
TO-59 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
ISAHAYA |
2447 |
TO-92 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MITSUBISH |
23+ |
TO-92 |
50000 |
全新原装正品现货,支持订货 |
|||
MITSUBISHI/三菱 |
23+ |
01+ |
6500 |
专注配单,只做原装进口现货 |
|||
长电 |
25+23+ |
TO-92M |
24652 |
绝对原装正品全新进口深圳现货 |
|||
MITSUBIS |
23+ |
TO-59 |
220 |
专营高频管模块,全新原装! |
2SC32规格书下载地址
2SC32参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SC3229
- 2SC3228
- 2SC3225
- 2SC3223
- 2SC3222
- 2SC3221
- 2SC3220
- 2SC3219
- 2SC3214
- 2SC3213
- 2SC3212A
- 2SC3212
- 2SC3211A
- 2SC3211
- 2SC3210
- 2SC321
- 2SC3209
- 2SC3208
- 2SC3207
- 2SC3206
- 2SC3205
- 2SC3204
- 2SC3203
- 2SC3202
- 2SC3201
- 2SC3200
- 2SC320
- 2SC32(A)
- 2SC3199
- 2SC3198
- 2SC3197
- 2SC3196
- 2SC3195
- 2SC3194
- 2SC3193
- 2SC3192
- 2SC3191
- 2SC3190
- 2SC319
- 2SC3189
- 2SC3187
- 2SC3186
- 2SC3185
- 2SC3184
- 2SC3183
- 2SC3182
- 2SC3181
- 2SC3180
- 2SC3179
- 2SC3178
- 2SC3176
2SC32数据表相关新闻
2SC2712G-SOT23.3R-Y-TG
2SC2712G-SOT23.3R-Y-TG
2023-1-312SC3356
2SC3356,全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-232SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-52SC2334中文资料
2SC2334中文资料
2019-2-182SC2859中文资料
2SC2859中文资料
2019-2-18
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