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2SC265晶体管资料
2SC265别名:2SC265三极管、2SC265晶体管、2SC265晶体三极管
2SC265生产厂家:日本冲电气工业股份公司
2SC265制作材料:Si-NPN
2SC265性质:微型 (Min)_射频/高频放大 (HF)_开关管 (S)
2SC265封装形式:贴片封装
2SC265极限工作电压:40V
2SC265最大电流允许值:0.12A
2SC265最大工作频率:200MHZ
2SC265引脚数:3
2SC265最大耗散功率:0.1W
2SC265放大倍数:
2SC265图片代号:G-22
2SC265vtest:40
2SC265htest:200000000
- 2SC265atest:0.12
2SC265wtest:0.1
2SC265代换 2SC265用什么型号代替:BSS11,BSX92,BSX93,2N2368(A),2N2369(A),
2SC265价格
参考价格:¥0.9099
型号:2SC2655-Y(TE6,F,M) 品牌:Toshiba 备注:这里有2SC265多少钱,2025年最近7天走势,今日出价,今日竞价,2SC265批发/采购报价,2SC265行情走势销售排行榜,2SC265报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Switchingregulatorapplicaition. ·Highvoltageswitchingapplication. ·HighspeedDC-DCconverterapplication. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TOSHIBATRANSISTORSILICONNPNEPITAXIALPLANARTYPE 2SC2652is2~30MhzSSBLinearPowerAmplifierApplications. (50VSupplyVoltageUse) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyPowerAmplifier,MediumSpeedSwitching SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·HighCollectorCurrent::IC=7A ·LowCollectorSaturationVoltage :VCE(sat)=0.3(V)(Max)@IC=3A ·ComplementtoType2SA1129 APPLICATIONS ·Designedforlow-frequencypoweramplifiersandmid-speedswitchingapplications. ·Idealforuseinalampdriver. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA1129 ·Lowcollectorsaturationvotage APPLICATIONS ·Forlow-frequencypoweramplifiersandmid-speedswitchingapplications | SAVANTIC Savantic, Inc. | |||
SILICONPOWERTRANSISTOR NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •Largecurrentcapacitanceinsmalldimension:IC(DC)=7A •Lowcollectorsaturationvoltage: VCE(sat)=0.3VMAX.(IC=3.0A) •Idealforuseinalampdriver •Complementarytransi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
TO-92MODPlastic-EncapsulateTransistors FEATURES LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) HighSpeedSwitchingTime:tstg=1μs(Typ.) Complementaryto2SA1020 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
PowerAmplifierApplicationsPowerSwitchingApplications PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TRANSISTOR(NPN) FEATURES ●Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) ●Highspeedswitchingtime:tstg=1μs(Typ.) ●Complementaryto2SA1020 | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
SiliconNPNtransistorinaTO-92LMPlasticPackage Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
NPNGeneralPurposeTransistors NPNGeneralPurposeTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
NPNPlasticEncapsulatedTransistor FEATURES -Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) -Highspeedswitchingtime:tstg=1μs(Typ.) -Complementaryto2SA1020 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
TO-92LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
iscSiliconNPNPowTransistor DESCRIPTION •SiliconNPNepitaxialtype •Lowsaturationvoltage •Complementaryto2SA1020 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Powerswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
TO-92MODPlastic-EncapsulateTransistors FEATURES LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) HighSpeedSwitchingTime:tstg=1μs(Typ.) Complementaryto2SA1020 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
NPNPlastic-EncapsulateTransistor Features •Collectorof0.9WattsofPowerDissipation. •Collector-current2.0A •Operatingandstoragejunctiontemperaturerange:-55to+150 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PowerAmplifierApplicationsPowerSwitchingApplications PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
NPNPlastic-EncapsulateTransistor Features •Collectorof0.9WattsofPowerDissipation. •Collector-current2.0A •Operatingandstoragejunctiontemperaturerange:-55to+150 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
Highspeedswitchingtransistor [COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
TRIPLEDIFFUSEDPLANERTYPEHIGHVOLTAGEHIGHSPEEDSWITCHING Features •Highvoltage,highswitchingspeed •Highreliability Applications •Switchingregulators •DC-DCconverter •Solidstaterelay •Generalpurposepoweramplifiers | FujiFuji Electric 富士电机富士电机株式会社 | |||
SUPERHIGHSPEEDSWITCHINGTRANSISTORS [Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •Switchingregulators •DC-DCconverter •Solidstaterelay •Generalpurposepoweramplifiers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •Switchingregulators •DC-DCconverter •Solidstaterelay •Generalpurposepoweramplifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
LargePc 文件:84.66 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNtransistorinaTO-220PlasticPackage. 文件:570.49 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNPowerTransistor 文件:133.04 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors 文件:104.71 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS 文件:210.83 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconNPNEpitaxialType(PCTProcess) 文件:139.74 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS 文件:259.7 Kbytes Page:4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
COLORTELEVISIONN1PSChassis 文件:2.69679 Mbytes Page:54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
COLORTELEVISION 文件:2.69679 Mbytes Page:54 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
COLOURTELEVISIONC9PJChassis 文件:6.49885 Mbytes Page:126 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType(PCTProcess) 文件:139.74 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |
2SC265产品属性
- 类型
描述
- 型号
2SC265
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
24+/25+ |
14000 |
原装正品现货库存价优 |
||||
TOSHIBA |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOSHIBA |
24+ |
TO-92L |
5000 |
全新原装正品,现货销售 |
|||
CJ/长电 |
21+ |
TO-92L |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
CAI |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
长电 |
25+23+ |
TO-92L |
24197 |
绝对原装正品全新进口深圳现货 |
|||
TOSHIBA/东芝 |
23+ |
TO-92L |
9800 |
全新原装现货,假一赔十 |
|||
TOSHIBA/东芝 |
24+ |
TO-92M |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
24+ |
TO-92 |
25 |
|||||
TOSHIBA/东芝 |
22+ |
TO92L |
20000 |
保证原装正品,假一陪十 |
2SC265规格书下载地址
2SC265参数引脚图相关
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- 2SC2623
2SC265数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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