2SC265晶体管资料

  • 2SC265别名:2SC265三极管、2SC265晶体管、2SC265晶体三极管

  • 2SC265生产厂家:日本冲电气工业股份公司

  • 2SC265制作材料:Si-NPN

  • 2SC265性质:微型 (Min)_射频/高频放大 (HF)_开关管 (S)

  • 2SC265封装形式:贴片封装

  • 2SC265极限工作电压:40V

  • 2SC265最大电流允许值:0.12A

  • 2SC265最大工作频率:200MHZ

  • 2SC265引脚数:3

  • 2SC265最大耗散功率:0.1W

  • 2SC265放大倍数

  • 2SC265图片代号:G-22

  • 2SC265vtest:40

  • 2SC265htest:200000000

  • 2SC265atest:0.12

  • 2SC265wtest:0.1

  • 2SC265代换 2SC265用什么型号代替:BSS11,BSX92,BSX93,2N2368(A),2N2369(A),

2SC265价格

参考价格:¥0.9099

型号:2SC2655-Y(TE6,F,M) 品牌:Toshiba 备注:这里有2SC265多少钱,2025年最近7天走势,今日出价,今日竞价,2SC265批发/采购报价,2SC265行情走势销售排行榜,2SC265报价。
型号 功能描述 生产厂家 企业 LOGO 操作

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application.

ISC

无锡固电

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2SC2652 is 2 ~ 30 Mhz SSB Linear Power Amplifier Applications. (50V Supply Voltage Use)

TOSHIBA

东芝

Audio Frequency Power Amplifier, Medium Speed Switching

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver.

ISC

无锡固电

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transi

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications

SAVANTIC

isc Silicon NPN Pow Transistor

DESCRIPTION • Silicon NPN epitaxial type • Low saturation voltage • Complementary to 2SA1020 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Power switching applications

ISC

无锡固电

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High Speed Switching Time: tstg=1μs(Typ.) ● Complementary to 2SA1020

JIANGSU

长电科技

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

WEITRON

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

NPN Plastic Encapsulated Transistor

FEATURES - Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) - High speed switching time:tstg=1μs(Typ.) - Complementary to 2SA1020

SECOS

喜可士

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

TRANSISTOR (NPN)

FEATURES ● Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High speed switching time: tstg=1μs(Typ.) ● Complementary to 2SA1020

KOOCHIN

灏展电子

Silicon NPN transistor in a TO-92LM Plastic Package

Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low saturation voltage, high speed switching time, complementary to 2SA1020. Applications Power amplifier and switching applications.

FOSHAN

蓝箭电子

TO-92MOD Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020

DGNJDZ

南晶电子

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

TO-92MOD Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020

DGNJDZ

南晶电子

NPN Plastic-Encapsulate Transistor

Features • Collector of 0.9Watts of Power Dissipation. • Collector-current 2.0A • Operating and storage junction temperature range: -55 to +150 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS

MCC

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

Power Amplifier Applications Power Switching Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

TOSHIBA

东芝

NPN Plastic-Encapsulate Transistor

Features • Collector of 0.9Watts of Power Dissipation. • Collector-current 2.0A • Operating and storage junction temperature range: -55 to +150 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS

MCC

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

UTC

友顺

TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING

Features • High voltage, high switching speed • High reliability Applications • Switching regulators • DC-DC converter • Solid state relay • General purpose power amplifiers

Fuji

富士通

SUPER HIGH SPEED SWITCHING TRANSISTORS

[Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA

ETCList of Unclassifed Manufacturers

未分类制造商

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • DC-DC converter • Solid state relay • General purpose power amplifiers

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • DC-DC converter • Solid state relay • General purpose power amplifiers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications.

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications.

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications.

ISC

无锡固电

Power Transistor - Silicon PNP Triple-Diffused Planar Type

Panasonic

松下

Large Pc

文件:84.66 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

文件:133.04 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:104.71 Kbytes Page:3 Pages

SAVANTIC

双极晶体管

FOSHAN

蓝箭电子

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Silicon NPN transistor in a TO-220 Plastic Package.

文件:570.49 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

文件:259.7 Kbytes Page:4 Pages

UTC

友顺

Silicon NPN Epitaxial Type (PCT Process)

文件:139.74 Kbytes Page:5 Pages

TOSHIBA

东芝

COLOR TELEVISION N1PS Chassis

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

COLOR TELEVISION

文件:2.69679 Mbytes Page:54 Pages

TOSHIBA

东芝

2SC265产品属性

  • 类型

    描述

  • 型号

    2SC265

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-12-25 14:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ原装长电
23+
TO-92L
45520
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOS
TO-92L
8553
一级代理 原装正品假一罚十价格优势长期供货
CJ原装长电
24+
TO-92L
9000
只做原装正品 有挂有货 假一赔十
TOSHIBA
2021+
TO-92
7600
原装现货,欢迎询价
24+
60000
CJ
24+/25+
SOT89
30000
100%原装正品真实库存,支持实单
TOSHIBA
2540+
TO-92
9854
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA
24+
TO-92
30000
原装正品公司现货,假一赔十!
TOS
24+
SMD
20000
一级代理原装现货假一罚十
TOSHIBA
21+
TO-92
10000
只做原装,质量保证

2SC265数据表相关新闻