2SC265晶体管资料

  • 2SC265别名:2SC265三极管、2SC265晶体管、2SC265晶体三极管

  • 2SC265生产厂家:日本冲电气工业股份公司

  • 2SC265制作材料:Si-NPN

  • 2SC265性质:微型 (Min)_射频/高频放大 (HF)_开关管 (S)

  • 2SC265封装形式:贴片封装

  • 2SC265极限工作电压:40V

  • 2SC265最大电流允许值:0.12A

  • 2SC265最大工作频率:200MHZ

  • 2SC265引脚数:3

  • 2SC265最大耗散功率:0.1W

  • 2SC265放大倍数

  • 2SC265图片代号:G-22

  • 2SC265vtest:40

  • 2SC265htest:200000000

  • 2SC265atest:0.12

  • 2SC265wtest:0.1

  • 2SC265代换 2SC265用什么型号代替:BSS11,BSX92,BSX93,2N2368(A),2N2369(A),

2SC265价格

参考价格:¥0.9099

型号:2SC2655-Y(TE6,F,M) 品牌:Toshiba 备注:这里有2SC265多少钱,2025年最近7天走势,今日出价,今日竞价,2SC265批发/采购报价,2SC265行情走势销售排行榜,2SC265报价。
型号 功能描述 生产厂家&企业 LOGO 操作

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·HighSwitchingSpeed ·WideAreaofSafeOperation APPLICATIONS ·Switchingregulatorapplicaition. ·Highvoltageswitchingapplication. ·HighspeedDC-DCconverterapplication.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TOSHIBATRANSISTORSILICONNPNEPITAXIALPLANARTYPE

2SC2652is2~30MhzSSBLinearPowerAmplifierApplications. (50VSupplyVoltageUse)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyPowerAmplifier,MediumSpeedSwitching

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollectorCurrent::IC=7A ·LowCollectorSaturationVoltage :VCE(sat)=0.3(V)(Max)@IC=3A ·ComplementtoType2SA1129 APPLICATIONS ·Designedforlow-frequencypoweramplifiersandmid-speedswitchingapplications. ·Idealforuseinalampdriver.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Complementtotype2SA1129 ·Lowcollectorsaturationvotage APPLICATIONS ·Forlow-frequencypoweramplifiersandmid-speedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICONPOWERTRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •Largecurrentcapacitanceinsmalldimension:IC(DC)=7A •Lowcollectorsaturationvoltage: VCE(sat)=0.3VMAX.(IC=3.0A) •Idealforuseinalampdriver •Complementarytransi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

TO-92MODPlastic-EncapsulateTransistors

FEATURES LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) HighSpeedSwitchingTime:tstg=1μs(Typ.) Complementaryto2SA1020

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PowerAmplifierApplicationsPowerSwitchingApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRANSISTOR(NPN)

FEATURES ●Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) ●Highspeedswitchingtime:tstg=1μs(Typ.) ●Complementaryto2SA1020

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

NPNPlasticEncapsulatedTransistor

FEATURES -Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) -Highspeedswitchingtime:tstg=1μs(Typ.) -Complementaryto2SA1020

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

iscSiliconNPNPowTransistor

DESCRIPTION •SiliconNPNepitaxialtype •Lowsaturationvoltage •Complementaryto2SA1020 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Powerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

TO-92MODPlastic-EncapsulateTransistors

FEATURES LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) HighSpeedSwitchingTime:tstg=1μs(Typ.) Complementaryto2SA1020

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPNPlastic-EncapsulateTransistor

Features •Collectorof0.9WattsofPowerDissipation. •Collector-current2.0A •Operatingandstoragejunctiontemperaturerange:-55to+150 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PowerAmplifierApplicationsPowerSwitchingApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNPlastic-EncapsulateTransistor

Features •Collectorof0.9WattsofPowerDissipation. •Collector-current2.0A •Operatingandstoragejunctiontemperaturerange:-55to+150 •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

Highspeedswitchingtransistor

[COLLMERSEMICONDUCTOR] Highspeedswitchingtransistor

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

TRIPLEDIFFUSEDPLANERTYPEHIGHVOLTAGEHIGHSPEEDSWITCHING

Features •Highvoltage,highswitchingspeed •Highreliability Applications •Switchingregulators •DC-DCconverter •Solidstaterelay •Generalpurposepoweramplifiers

FujiFuji Electric

富士电机富士电机株式会社

Fuji

SUPERHIGHSPEEDSWITCHINGTRANSISTORS

[Collmer] Superhighspeedswitchingtransistors ●Suitablefor100kHzclassswitchingregulators Highspeedswitchingtransistorsforringingchokecoverter ●TheDCcurrentgainishigh.(min.20) ●Highspeedswitchingperformance LargeSOAswitchingtransistors ●AnespeciallywideSOA

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •Switchingregulators •DC-DCconverter •Solidstaterelay •Generalpurposepoweramplifiers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •Switchingregulators •DC-DCconverter •Solidstaterelay •Generalpurposepoweramplifiers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforhighspeedpowerswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

LargePc

文件:84.66 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNtransistorinaTO-220PlasticPackage.

文件:570.49 Kbytes Page:6 Pages

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNPowerTransistor

文件:133.04 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

文件:104.71 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

文件:210.83 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SiliconNPNEpitaxialType(PCTProcess)

文件:139.74 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

文件:259.7 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

COLORTELEVISIONN1PSChassis

文件:2.69679 Mbytes Page:54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

COLORTELEVISION

文件:2.69679 Mbytes Page:54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

COLOURTELEVISIONC9PJChassis

文件:6.49885 Mbytes Page:126 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)

文件:139.74 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC265产品属性

  • 类型

    描述

  • 型号

    2SC265

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-7-4 17:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+/25+
14000
原装正品现货库存价优
TOSHIBA
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA
24+
TO-92L
5000
全新原装正品,现货销售
CJ/长电
21+
TO-92L
30000
百域芯优势 实单必成 可开13点增值税发票
CAI
NA
8553
一级代理 原装正品假一罚十价格优势长期供货
长电
25+23+
TO-92L
24197
绝对原装正品全新进口深圳现货
TOSHIBA/东芝
23+
TO-92L
9800
全新原装现货,假一赔十
TOSHIBA/东芝
24+
TO-92M
30000
房间原装现货特价热卖,有单详谈
24+
TO-92
25
TOSHIBA/东芝
22+
TO92L
20000
保证原装正品,假一陪十

2SC265芯片相关品牌

  • AMPHENOLCS
  • Central
  • GENESIC
  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • PTC
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

2SC265数据表相关新闻