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2SC265晶体管资料
2SC265别名:2SC265三极管、2SC265晶体管、2SC265晶体三极管
2SC265生产厂家:日本冲电气工业股份公司
2SC265制作材料:Si-NPN
2SC265性质:微型 (Min)_射频/高频放大 (HF)_开关管 (S)
2SC265封装形式:贴片封装
2SC265极限工作电压:40V
2SC265最大电流允许值:0.12A
2SC265最大工作频率:200MHZ
2SC265引脚数:3
2SC265最大耗散功率:0.1W
2SC265放大倍数:
2SC265图片代号:G-22
2SC265vtest:40
2SC265htest:200000000
- 2SC265atest:0.12
2SC265wtest:0.1
2SC265代换 2SC265用什么型号代替:BSS11,BSX92,BSX93,2N2368(A),2N2369(A),
2SC265价格
参考价格:¥0.9099
型号:2SC2655-Y(TE6,F,M) 品牌:Toshiba 备注:这里有2SC265多少钱,2025年最近7天走势,今日出价,今日竞价,2SC265批发/采购报价,2SC265行情走势销售排行榜,2SC265报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. | ISC 无锡固电 | |||
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 is 2 ~ 30 Mhz SSB Linear Power Amplifier Applications. (50V Supply Voltage Use) | TOSHIBA 东芝 | |||
Audio Frequency Power Amplifier, Medium Speed Switching SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. | ISC 无锡固电 | |||
SILICON POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Large current capacitance in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) • Ideal for use in a lamp driver • Complementary transi | RENESAS 瑞萨 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1129 ·Low collector saturation votage APPLICATIONS ·For low-frequency power amplifiers and mid-speed switching applications | SAVANTIC | |||
isc Silicon NPN Pow Transistor DESCRIPTION • Silicon NPN epitaxial type • Low saturation voltage • Complementary to 2SA1020 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Power switching applications | ISC 无锡固电 | |||
TO-92L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High Speed Switching Time: tstg=1μs(Typ.) ● Complementary to 2SA1020 | JIANGSU 长电科技 | |||
NPN General Purpose Transistors NPN General Purpose Transistors P/b Lead(Pb)-Free | WEITRON | |||
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020. | TOSHIBA 东芝 | |||
Power Amplifier Applications Power Switching Applications Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020. | TOSHIBA 东芝 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
NPN Plastic Encapsulated Transistor FEATURES - Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) - High speed switching time:tstg=1μs(Typ.) - Complementary to 2SA1020 | SECOS 喜可士 | |||
TRANSISTOR (NPN) FEATURES Power dissipation PCM: 900 mW (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
TRANSISTOR (NPN) FEATURES ● Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) ● High speed switching time: tstg=1μs(Typ.) ● Complementary to 2SA1020 | KOOCHIN 灏展电子 | |||
Silicon NPN transistor in a TO-92LM Plastic Package Descriptions Silicon NPN transistor in a TO-92LM Plastic Package. Features Low saturation voltage, high speed switching time, complementary to 2SA1020. Applications Power amplifier and switching applications. | FOSHAN 蓝箭电子 | |||
TO-92MOD Plastic-Encapsulate Transistors FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020 | DGNJDZ 南晶电子 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
TO-92MOD Plastic-Encapsulate Transistors FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020 | DGNJDZ 南晶电子 | |||
NPN Plastic-Encapsulate Transistor Features • Collector of 0.9Watts of Power Dissipation. • Collector-current 2.0A • Operating and storage junction temperature range: -55 to +150 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS | MCC | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
Power Amplifier Applications Power Switching Applications Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020. | TOSHIBA 东芝 | |||
NPN Plastic-Encapsulate Transistor Features • Collector of 0.9Watts of Power Dissipation. • Collector-current 2.0A • Operating and storage junction temperature range: -55 to +150 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS | MCC | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.) | UTC 友顺 | |||
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING Features • High voltage, high switching speed • High reliability Applications • Switching regulators • DC-DC converter • Solid state relay • General purpose power amplifiers | Fuji 富士通 | |||
SUPER HIGH SPEED SWITCHING TRANSISTORS [Collmer] Super high speed switching transistors ● Suitable for 100kHz class switching regulators High speed switching transistors for ringing choke coverter ● The DC current gain is high. (min. 20) ● High speed switching performance Large SOA switching transistors ● An especially wide SOA | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
High speed switching transistor [COLLMER SEMICONDUCTOR] High speed switching transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • DC-DC converter • Solid state relay • General purpose power amplifiers | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Switching regulators • DC-DC converter • Solid state relay • General purpose power amplifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications. | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) • High Switching Speed APPLICATIONS • Designed for high speed power switching applications. | ISC 无锡固电 | |||
Power Transistor - Silicon PNP Triple-Diffused Planar Type | Panasonic 松下 | |||
Large Pc 文件:84.66 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon NPN Power Transistor 文件:133.04 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:104.71 Kbytes Page:3 Pages | SAVANTIC | |||
双极晶体管 | FOSHAN 蓝箭电子 | |||
Transistor-Bipolar Power Transistors | RENESAS 瑞萨 | |||
Silicon NPN transistor in a TO-220 Plastic Package. 文件:570.49 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS 文件:259.7 Kbytes Page:4 Pages | UTC 友顺 | |||
Silicon NPN Epitaxial Type (PCT Process) 文件:139.74 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
COLOR TELEVISION N1PS Chassis 文件:2.69679 Mbytes Page:54 Pages | TOSHIBA 东芝 | |||
COLOR TELEVISION 文件:2.69679 Mbytes Page:54 Pages | TOSHIBA 东芝 |
2SC265产品属性
- 类型
描述
- 型号
2SC265
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ原装长电 |
23+ |
TO-92L |
45520 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOS |
TO-92L |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CJ原装长电 |
24+ |
TO-92L |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
TOSHIBA |
2021+ |
TO-92 |
7600 |
原装现货,欢迎询价 |
|||
24+ |
60000 |
||||||
CJ |
24+/25+ |
SOT89 |
30000 |
100%原装正品真实库存,支持实单 |
|||
TOSHIBA |
2540+ |
TO-92 |
9854 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOSHIBA |
24+ |
TO-92 |
30000 |
原装正品公司现货,假一赔十! |
|||
TOS |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
TOSHIBA |
21+ |
TO-92 |
10000 |
只做原装,质量保证 |
2SC265芯片相关品牌
2SC265规格书下载地址
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2SC265数据表相关新闻
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2019-2-18
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