TO-92MOD Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) Complementary to 2SA1020

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

Silicon NPN Epitaxial Type (PCT Process)

文件：139.74 Kbytes Page：5 Pages

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.