NPN Plastic-Encapsulate Transistor

Features • Collector of 0.9Watts of Power Dissipation. • Collector-current 2.0A • Operating and storage junction temperature range: -55
to +150
• Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS

中等功率双极型晶体管

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: tstg=1.0μs (Typ.)

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SA1020.

Silicon NPN Epitaxial Type (PCT Process)

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.