NPNPlastic-EncapsulateTransistor

Features •Collectorof0.9WattsofPowerDissipation. •Collector-current2.0A •Operatingandstoragejunctiontemperaturerange:-55
to+150
•EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

文件：210.83 Kbytes Page：4 Pages

SiliconNPNEpitaxialType(PCTProcess)

文件：139.74 Kbytes Page：5 Pages

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个