isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

丝印代码：C1971；NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1971 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220CE Package

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

Silicon NPN RF Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 17V(Min) APPLICATIONS · 10 to 14 Watts Output Power Amplifiers In VHF Band Mobile Radio Applications.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220CE Package

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

TRANSISTOR NPN EPITAXIAL PLANAR

2SC1973 RF Amplifier and Driver Features ● High gain ● High fT ● Low Cob 2SC1980 High Voltage, Low-noise Amplifier Complementary Pair with 2SA921 Features ● High VCEO ● Low NV 2SC2076 RF Amplifier Features ● Suitable for RF amp., OSC, mix. and IF amp. in FM/AM radios. ● Large with

Si NPN Epitaxial Planar

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Si NPN Epitaxial Planar

Si NPN Epitaxial Planar Transceiver Power Output Features • Withstands worst overload conditions. • VCBO = 120V

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications

Withstands worst overload conditions.

DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications

0.8 to 1 watts output power amplifiers and driver in VHF band mobille radio applications.

文件：254.94 Kbytes Page：3 Pages

4 to 5 watts output power amplifiers in VHF band applications.

文件：269.74 Kbytes Page：3 Pages

Trans GP BJT NPN 17V 2A 3-Pin(3+Tab) TO-220

NPN transistor for 10 to 14 watts output power amplifiers in VHF band mobile radio applications

10 to 14 watts output power amplifiers in VHF band mobile radio applications.

文件：330.28 Kbytes Page：4 Pages

TRANSISTOR NPN EPITAXIAL PLANAR