isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1971 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220CE Package

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

Silicon NPN RF Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 17V(Min) APPLICATIONS · 10 to 14 Watts Output Power Amplifiers In VHF Band Mobile Radio Applications.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in Most Applications • High Gain Reduces Drive Requirements • Economical TO-220CE Package

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

TRANSISTOR NPN EPITAXIAL PLANAR

2SC1973 RF Amplifier and Driver Features ● High gain ● High fT ● Low Cob 2SC1980 High Voltage, Low-noise Amplifier Complementary Pair with 2SA921 Features ● High VCEO ● Low NV 2SC2076 RF Amplifier Features ● Suitable for RF amp., OSC, mix. and IF amp. in FM/AM radios. ● Large with

Si NPN Epitaxial Planar

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Si NPN Epitaxial Planar

Si NPN Epitaxial Planar Transceiver Power Output Features • Withstands worst overload conditions. • VCBO = 120V

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications

Withstands worst overload conditions.

DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications

0.8 to 1 watts output power amplifiers and driver in VHF band mobille radio applications.

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4 to 5 watts output power amplifiers in VHF band applications.

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10 to 14 watts output power amplifiers in VHF band mobile radio applications.

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