| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC1975 | Si NPN Epitaxial Planar Si NPN Epitaxial Planar Transceiver Power Output Features • Withstands worst overload conditions. • VCBO = 120V | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
2SC1975 | Withstands worst overload conditions. DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications | ISC 无锡固电 | | |
2SC1975 | Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage : V(BR)CBO=160V(Min) • Withstands worst overload conditions. APPLICATIONS • Design for used in transceiver power output applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SC1975 | Si NPN Epitaxial Planar | |
2SC1975产品属性
- 类型
描述
- 型号
2SC1975
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAT |
24+ |
2470 |
|||||
NEC |
2602+ |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
MAT |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
2SC1975规格书下载地址
2SC1975参数引脚图相关
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DdatasheetPDF页码索引
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