DESCRIPTION

2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

FEATURES

● High power gain: Gpe ≥ 10dB,

@VCC = 13.5V, Po = 6W, f = 175MHz

● Emitter ballasted construction, gold metallization for high

reliability and good performances.

● TO-220 package similar is combinient for mounting.

● Ability to withstand more than 20:1 load

VSWR when operated at VCC = 15.2V, Po = 6W, f = 175MHz

APPLICATION

4 to 5 watts output power amplifiers in VHF band applications.