isc Silicon NPN Power Transistor

DESCRIPTION • High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V • High Reliability APPLICATIONS • Designed for RF power amplifiers on VHF band mobile radio applications.

RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

DESCRIPTION\n2SC1970, C1970 is a silicon NPN epitaxial planar transistor designed for RF power amplifiers on VHF band mobile radio applications.FEATURES\n● High power gain: Gpe ≥ 9.2dB\n   @VCC = 13.5V, PO = 1W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliabilit ● High power gain: Gpe ≥ 9.2dB\n   @VCC = 13.5V, PO = 1W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability and good performances.\n● TO-220 package similarly is combinient for mountingAPPLICATION\n   0.8 to 1 watts output power amplifiers and driver in VHF ba;

0.8 to 1 watts output power amplifiers and driver in VHF band mobille radio applications.

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