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2SC162晶体管资料

  • 2SC162别名:2SC162三极管、2SC162晶体管、2SC162晶体三极管

  • 2SC162生产厂家:日本冲电气工业股份公司

  • 2SC162制作材料:Si-NPN

  • 2SC162性质:甚高频 (VHF)_宽频带放大 (A)_TR

  • 2SC162封装形式:直插封装

  • 2SC162极限工作电压:30V

  • 2SC162最大电流允许值:0.25A

  • 2SC162最大工作频率:500MHZ

  • 2SC162引脚数:3

  • 2SC162最大耗散功率:0.5W

  • 2SC162放大倍数

  • 2SC162图片代号:C-40

  • 2SC162vtest:30

  • 2SC162htest:500000000

  • 2SC162atest:0.25

  • 2SC162wtest:0.5

  • 2SC162代换 2SC162用什么型号代替:BFR97,BFR98,BFS23,BFW16,BFW17,BFX33,BFX55,2N3866,3DA32A,

型号 功能描述 生产厂家 企业 LOGO 操作

HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD?

HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURE ● High Speed : tstg = 20 ns MAX.

NEC

瑞萨

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor Features ● High speed : tstg=20ns MAX.

KEXIN

科信电子

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA)

NEC

瑞萨

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA)

NEC

瑞萨

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor Features ● High DC current gain.

KEXIN

科信电子

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products.

RENESAS

瑞萨

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products. • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)\n• High Voltage: VCEO = 50 V;

RENESAS

瑞萨

丝印代码:L4;SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V

UMW

友台半导体

丝印代码:L4;Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:L6;Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

LEIDITECH

雷卯电子

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

DGNJDZ

南晶电子

NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623 is designed for use driver stage ofAF amplifier and general purpose application.

SECOS

喜可士

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency amplifier applications.

DCCOM

道全

丝印代码:L4;Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

BILIN

银河微电

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V

NEC

瑞萨

丝印代码:L5;NPN General Purpose Transistors

Lead(Pb)-Free

WEITRON

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD

DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai

UTC

友顺

丝印代码:L4/L5/L6/L7;Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ● High Voltage:VCEO=50V. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor. ● Audio frequency general purpose amplifier.

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V

JIANGSU

长电科技

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V

HDSEMI

海德半导体

Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

HOTTECH

合科泰

High DC current gain hFE 200(Typ)VCE 6V, IC 1mA

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

MAKOSEMI

美科半导体

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

NPN Silicon Transistor

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

KEXIN

科信电子

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812. Applications Audio frequency general amplifier application.

FOSHAN

蓝箭电子

NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V SILICON TRANSISTOR

RENESAS

瑞萨

NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.

SECOS

喜可士

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

NPN Epitaxial Planar Transistor

FEATURE • High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. • High Voltage : VCEO=50V.

SECOS

喜可士

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

丝印代码:L4;NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

丝印代码:L5;NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

丝印代码:L5.;General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

丝印代码:L6;NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

丝印代码:L6.;General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

丝印代码:L7;NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD

DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai

UTC

友顺

General Purpose Transistors

General Purpose Transistors Pb-Free packkage is available

YEASHIN

亚昕科技

General Purpose Transistors

General Purpose Transistors Pb-Free packkage is available

YEASHIN

亚昕科技

General Purpose Transistors

General Purpose Transistors Pb-Free packkage is available

YEASHIN

亚昕科技

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812T. Applications Audio frequency general amplifier application.

FOSHAN

蓝箭电子

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812W. Applications Audio frequency general amplifier application.

FOSHAN

蓝箭电子

丝印代码:L4;NPN Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain: hFE=200TYP. ● High voltage: VCEO=50V. ● Power dissipation.(PC=200mW) APPLICATIONS ● Audio frequency general purpose amplifier.

BILIN

银河微电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

SAVANTIC

SILICON NPN PLANAR TYPE

MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. Features High Breakdown Voltage : VCEO = 120V (2SC1624) Complementary to 2SA814 and 2SA815

TOSHIBA

东芝

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SC162产品属性

  • 类型

    描述

  • VCEO (V):

    20

  • hFE min.:

    40

  • hFE max.:

    180

  • Pc (W):

    0.2

  • Production Status:

    EOL

更新时间:2026-5-16 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
2430+
SOT23
8540
只做原装正品假一赔十为客户做到零风险!!
CJ
24+
SOT23
9800
一级代理/全新原装现货/长期供应!
NEC
25+23+
SOT-23
134000
全新原装正品,优势公司现货绝对原装正品全新进口深圳现货
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
25+
500
公司现货库存
CJ/长电科技
2019+
SOT-23
36000
原盒原包装 可BOM配套
25+
500
公司现货库存
NEC
16+
SOT-23
3000
进口原装现货/价格优势!
JIANGSU
24+
SMD
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航
UTC(友顺)
24+/25+
SOT-23
3000
UTC原厂一级代理商,价格优势!

2SC162数据表相关新闻