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2SC162晶体管资料

  • 2SC162别名：2SC162三极管、2SC162晶体管、2SC162晶体三极管

  • 2SC162生产厂家：日本冲电气工业股份公司

  • 2SC162制作材料：Si-NPN

  • 2SC162性质：甚高频 （VHF）_宽频带放大 （A）_TR

  • 2SC162封装形式：直插封装

  • 2SC162极限工作电压：30V

  • 2SC162最大电流允许值：0.25A

  • 2SC162最大工作频率：500MHZ

  • 2SC162引脚数：3

  • 2SC162最大耗散功率：0.5W

  • 2SC162放大倍数：

  • 2SC162图片代号：C-40

  • 2SC162vtest：30

  • 2SC162htest：500000000

  • 2SC162atest：.25

  • 2SC162wtest：.5

  • 2SC162代换 2SC162用什么型号代替：BFR97,BFR98,BFS23,BFW16,BFW17,BFX33,BFX55,2N3866,3DA32A,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC1621

HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTORMINIMOLD?

HIGHSPEEDSWITCHINGPNPSILICONEPITAXIALTRANSISTORMINIMOLD FEATURE ●HighSpeed:tstg=20nsMAX.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC1621

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor Features ●Highspeed:tstg=20nsMAX.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC1622

AUDIOFREQUENCYHIGHGAINAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

AUDIOFREQUENCYHIGHGAINAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD FEATURES ●HighDCCurrentGain:hFE=600TYP.(VCE=6.0V,IC=1.0mA)

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC1622A

AUDIOFREQUENCYHIGHGAINAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

AUDIOFREQUENCYHIGHGAINAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD FEATURES ●HighDCCurrentGain:hFE=600TYP.(VCE=6.0V,IC=1.0mA)

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC1622A

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor Features ●HighDCcurrentgain.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC1623

NPNEpitaxialPlanarTransistor

DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1623

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforaudiofrequencyamplifierapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SC1623

Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SC1623

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •HighDCCurrentGain:hFE=200TYP. (VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC1623

NPNGeneralPurposeTransistors

Lead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SC1623

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD

DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ●HighVoltage:VCEO=50V. APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. ●Audiofrequencygeneralpurposeamplifier.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SC1623

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SC1623

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
2SC1623

Plastic-EncapsulateTransistors

FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2SC1623

HighDCcurrentgainhFE200(Typ)VCE6V,IC1mA

FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
2SC1623

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SC1623

NPNSiliconTransistor

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC1623

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2SC1623

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1623

SOT-323Plastic-EncapsulateTransistors

FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC1623

SOT-23Plastic-EncapsulateTransistors

FEATURES *HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA *Highvoltage:VCEO=50V

UMWUMW

友台友台半导体

UMW
2SC1623A

NPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •HighDCCurrentGain: hFE=200TYP.(VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V SILICONTRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SC1623F

NPNEpitaxialPlanarTransistor

DESCRIPTION The2SC1623FisdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1623K

NPNEpitaxialPlanarTransistor

FEATURE •HighDCcurrentgain:hFE=200(Typ),VCE=6V,IC=1mA. •HighVoltage:VCEO=50V.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1623L4

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623-L4

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1623L5

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623-L5

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1623-L5

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623L6

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623-L6

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623-L6

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623-L6

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1623L7

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623-L7

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623-L7

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1623-L7

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623L-X-AE3-R

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD

DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SC1623Q

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
2SC1623R

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
2SC1623S

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
2SC1623-SOT23

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1623T

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812T. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC1623W

SiliconNPNtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812W. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC1623W

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP. ●Highvoltage:VCEO=50V. ●Powerdissipation.(PC=200mW) APPLICATIONS ●Audiofrequencygeneralpurposeamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SC1624

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA814/815 ·Highbreakdownvoltage APPLICATIONS ·Mediumpoweramplifierapplications ·Driverstageamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC1624

SILICONNPNPLANARTYPE

MEDIUMPOWERAMPLIFIERAPPLICATIONS. DRIVERSTAGEAMPLIFIERAPPLICATIONS. Features HighBreakdownVoltage:VCEO=120V(2SC1624) Complementaryto2SA814and2SA815

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1624

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA814/815 ·Highbreakdownvoltage APPLICATIONS ·Mediumpoweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC1625

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA814/815 ·Highbreakdownvoltage APPLICATIONS ·Mediumpoweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC1625

SILICONNPNPLANARTYPE

MEDIUMPOWERAMPLIFIERAPPLICATIONS. DRIVERSTAGEAMPLIFIERAPPLICATIONS. Features HighBreakdownVoltage:VCEO=120V(2SC1624) Complementaryto2SA814and2SA815

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1625

SiliconNPNPowerTransistors

SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Complementtotype2SA814/815 ·Highbreakdownvoltage APPLICATIONS ·Mediumpoweramplifierapplications ·Driverstageamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SC1626

PNP/NPNSILICONPLANAREPITAXIALPOWERTRANSISTOR

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2SC1627

TRANSISTOR(DRIVERSTAGE,VOLTAGEAMPLIFIERAPPLICATIONS)

DriverStageAmplifierApplications VoltageAmplifierApplications •Complementaryto2SA817 •Driverstageapplicationof20to25wattsamplifiers.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SC1627A

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.8W(Tamb=25℃) Collectorcurrent ICM:0.4A Collector-basevoltage V(BR)CBO:80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SC1627A

TRANSISTOR(ERIVERSTAGE,VOLTAGEAMPLIFIERAPPLICATIONS)

Driver-StageAmplifierApplications VoltageAmplifierApplications •Complementaryto2SA817A. •Driver-stageapplicationsfor30-to35-wattamplifiers.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC162产品属性

  • 类型

    描述

  • 型号

    2SC162

  • 制造商

    KEXIN

  • 制造商全称

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述

    NPN Silicon Epitaxial Transistor

2SC162供应商更多...

更新时间：2024-4-26 8:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳诚思涵科技有限公司
2SC1623-T1B
NEC
16+
SOT-23
3000
进口原装现货/价格优势!
询价
瀚佳科技(深圳)有限公司
2SC1623L6
CJ
18+
SOT23
9800
一级代理/全新原装现货/长期供应!
询价
深圳市盈宏半导体科技有限公司
2SC1623
08+P
SOT-23
3000
库存刚更新加微13425146986
询价
深圳兆威电子有限公司
2SC1623
RENESAS
23+
SOT23
63000
原装正品现货
询价
深圳市欧特拉科技有限公司
2SC1623L6
JIANGSU
12+
SMD
5776
以质为本,只做原装正品
询价
深圳市明嘉莱科技有限公司
2SC1623IC
CJ/长电
24+
SOT-23
157400
明嘉莱只做原装正品现货
询价
深圳好佳好科技有限公司
2SC1623
CJ
1408+
SOT-23
999999
绝对原装进口现货可开增值税发票
询价
深圳市永贝尔科技有限公司
2SC1623
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
询价
深圳市弘为电子有限公司
2SC1623
NEC
16+
原厂封装
3500
原装现货假一罚十
询价
上海意淼电子科技有限公司
2SC1623
NEC
23+
NA
12000
全新原装假一赔十
询价

2SC162芯片相关品牌

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  • MPS
  • nichicon
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