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2SC162晶体管资料
2SC162别名:2SC162三极管、2SC162晶体管、2SC162晶体三极管
2SC162生产厂家:日本冲电气工业股份公司
2SC162制作材料:Si-NPN
2SC162性质:甚高频 (VHF)_宽频带放大 (A)_TR
2SC162封装形式:直插封装
2SC162极限工作电压:30V
2SC162最大电流允许值:0.25A
2SC162最大工作频率:500MHZ
2SC162引脚数:3
2SC162最大耗散功率:0.5W
2SC162放大倍数:
2SC162图片代号:C-40
2SC162vtest:30
2SC162htest:500000000
- 2SC162atest:0.25
2SC162wtest:0.5
2SC162代换 2SC162用什么型号代替:BFR97,BFR98,BFS23,BFW16,BFW17,BFX33,BFX55,2N3866,3DA32A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD? HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURE ● High Speed : tstg = 20 ns MAX. | NEC 瑞萨 | |||
NPN Silicon Epitaxial Transistor NPN Silicon Epitaxial Transistor Features ● High speed : tstg=20ns MAX. | KEXIN 科信电子 | |||
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA) | NEC 瑞萨 | |||
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA) | NEC 瑞萨 | |||
NPN Silicon Epitaxial Transistor NPN Silicon Epitaxial Transistor Features ● High DC current gain. | KEXIN 科信电子 | |||
NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623 is designed for use driver stage ofAF amplifier and general purpose application. | SECOS 喜可士 | |||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. | DCCOM 道全 | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier. | BILIN 银河微电 | |||
Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V | NEC 瑞萨 | |||
NPN General Purpose Transistors Lead(Pb)-Free | WEITRON | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai | UTC 友顺 | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ● High Voltage:VCEO=50V. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor. ● Audio frequency general purpose amplifier. | LUGUANG 鲁光电子 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V | JIANGSU 长电科技 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NPN ) Features ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V | HDSEMI 海德半导体 | |||
Plastic-Encapsulate Transistors FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V | HOTTECH 合科泰 | |||
High DC current gain hFE 200(Typ)VCE 6V, IC 1mA FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V | MAKOSEMI 美科半导体 | |||
TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
NPN Silicon Transistor Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | KEXIN 科信电子 | |||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812. Applications Audio frequency general amplifier application. | FOSHAN 蓝箭电子 | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier. | LEIDITECH 雷卯电子 | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
SOT-323 Plastic-Encapsulate Transistors FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V | DGNJDZ 南晶电子 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V | UMW 友台半导体 | |||
NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V SILICON TRANSISTOR | RENESAS 瑞萨 | |||
NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. | SECOS 喜可士 | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
NPN Epitaxial Planar Transistor FEATURE • High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. • High Voltage : VCEO=50V. | SECOS 喜可士 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai | UTC 友顺 | |||
General Purpose Transistors General Purpose Transistors Pb-Free packkage is available | YEASHIN 亚昕科技 | |||
General Purpose Transistors General Purpose Transistors Pb-Free packkage is available | YEASHIN 亚昕科技 | |||
General Purpose Transistors General Purpose Transistors Pb-Free packkage is available | YEASHIN 亚昕科技 | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
Silicon NPN transistor in a SOT-89 Plastic Package Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812T. Applications Audio frequency general amplifier application. | FOSHAN 蓝箭电子 | |||
Silicon NPN transistor in a SOT-323 Plastic Package Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812W. Applications Audio frequency general amplifier application. | FOSHAN 蓝箭电子 | |||
NPN Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain: hFE=200TYP. ● High voltage: VCEO=50V. ● Power dissipation.(PC=200mW) APPLICATIONS ● Audio frequency general purpose amplifier. | BILIN 银河微电 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications | SAVANTIC | |||
SILICON NPN PLANAR TYPE MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. Features High Breakdown Voltage : VCEO = 120V (2SC1624) Complementary to 2SA814 and 2SA815 | TOSHIBA 东芝 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | |||
SILICON NPN PLANAR TYPE MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. Features High Breakdown Voltage : VCEO = 120V (2SC1624) Complementary to 2SA814 and 2SA815 | TOSHIBA 东芝 | |||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications | SAVANTIC |
2SC162产品属性
- 类型
描述
- 型号
2SC162
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
NPN Silicon Epitaxial Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SMD |
3800 |
原装现货,可开13%税票 |
|||
CJ |
24+ |
SOT23 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
NEC |
24+ |
SOT |
4579 |
原装现货,假一赔十。 |
|||
NEC |
16+ |
SOT-23 |
3000 |
进口原装现货/价格优势! |
|||
CJ/长电 |
25+ |
SOT-23 |
157400 |
明嘉莱只做原装正品现货 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
10404 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
25+ |
SOT23L6 |
32000 |
RENESAS/瑞萨全新特价2SC1623-T1B即刻询购立享优惠#长期有货 |
|||
UTC(友顺) |
24+/25+ |
SOT-23 |
3000 |
UTC原厂一级代理商,价格优势! |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
NEC |
25+ |
SOT-23 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
2SC162芯片相关品牌
2SC162规格书下载地址
2SC162参数引脚图相关
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- 4899
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- 2SC1621
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2SC162数据表相关新闻
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2019-2-18
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