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2SB81晶体管资料
2SB81(H)别名:2SB81(H)三极管、2SB81(H)晶体管、2SB81(H)晶体三极管
2SB81(H)生产厂家:日本日立公司
2SB81(H)制作材料:Ge-PNP
2SB81(H)性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB81(H)封装形式:直插封装
2SB81(H)极限工作电压:80V
2SB81(H)最大电流允许值:0.5A
2SB81(H)最大工作频率:<1MHZ或未知
2SB81(H)引脚数:2
2SB81(H)最大耗散功率:2W
2SB81(H)放大倍数:
2SB81(H)图片代号:E-44
2SB81(H)vtest:80
2SB81(H)htest:999900
- 2SB81(H)atest:0.5
2SB81(H)wtest:2
2SB81(H)代换 2SB81(H)用什么型号代替:
2SB81价格
参考价格:¥0.4730
型号:2SB815-6-TB-E 品牌:ON 备注:这里有2SB81多少钱,2025年最近7天走势,今日出价,今日竞价,2SB81批发/采购报价,2SB81行情走势销售排行榜,2SB81报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PNP SILICON TRANSISTOR DESCRIPTION The 2SB810 is designed for use in output stages of portable radio and cassette type tape recorder, general purpose applications. | NEC 瑞萨 | |||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • High Power Dissipation • Complement to Type 2SD1032 APPLICATIONS • Designed for AF power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Wide area of safe operation • Low collector saturation voltage APPLICATIONS • For audio frequency output applications | SAVANTIC | |||
Bipolar Transistor Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage | ONSEMI 安森美半导体 | |||
For General-Purpose AF Amplifier General-Purpose AF Amplifier Applications Features • Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation voltage. | SANYO 三洋 | |||
Bipolar Transistor Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage | ONSEMI 安森美半导体 | |||
Bipolar Transistor Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage | ONSEMI 安森美半导体 | |||
Bipolar Transistor Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage | ONSEMI 安森美半导体 | |||
Bipolar Transistor Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage | ONSEMI 安森美半导体 | |||
Bipolar Transistor Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage | ONSEMI 安森美半导体 | |||
For LF Power Amp,50W Output, Large Power Switching For LF Power Amplifier, 50W Output Large Power Switching Applications Features • Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). • Wide ASO because of built-in ballast resistance. • Goode dependence of fT on current and good H | SANYO 三洋 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SD1046 • Wide area of safe operation APPLICATIONS • For LF Power Amplifier, 50W Output Large Power Switching Applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SD1046 • Wide area of safe operation APPLICATIONS • For LF Power Amplifier, 50W Output Large Power Switching Applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SD1046 • Wide area of safe operation APPLICATIONS • For LF Power Amplifier, 50W Output Large Power Switching Applications | SAVANTIC | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD1046 APPLICATIONS • Designed for LF power amplifier, SOW output large power switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications. | TGS | |||
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SD1047 | WINGS 永盛电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SD1047 APPLICATIONS • 140V/12A AF 60W output applications | JMNIC 锦美电子 | |||
140V/12A AF 60W Output Applications Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare | SANYO 三洋 | |||
140V/12A, AF 60W Output Applications?????? Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare | SANYO 三洋 | |||
Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | |||
140V / 12A, AF 80W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. | SANYO 三洋 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio | ISC 无锡固电 | |||
Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD1047E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO | ISC 无锡固电 | |||
Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application | TAITRON | |||
Silicon PNP epitaxial planer type(For low-frequency output amplification) ■ Features ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. | Panasonic 松下 | |||
ilicon PNP Power Transistors 文件:134.2 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistor 文件:70.48 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Good Linearity of hFE 文件:96.69 Kbytes Page:2 Pages | ISC 无锡固电 | |||
PNP Epitaxial Planar Silicon Transistors 文件:36.48 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:992.15 Kbytes Page:3 Pages | KEXIN 科信电子 | |||
Bipolar Transistor 文件:68.91 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Bipolar Transistor 文件:68.91 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 15V 0.7A 3CP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
PNP Transistors 文件:1.07087 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.07087 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.07087 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
Silicon PNP Power Transistors 文件:246.87 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:196.68 Kbytes Page:4 Pages | SAVANTIC | |||
PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors 文件:246.87 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:246.87 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
TO-3P Plastic-Encapsulate Transistors 文件:588.53 Kbytes Page:4 Pages | JIANGSU 长电科技 | |||
Silicon PNP Power Transistors 文件:172.26 Kbytes Page:4 Pages | ISC 无锡固电 | |||
POWER TRANSISTORS(12A,140V,100W) 文件:123.7 Kbytes Page:3 Pages | MOSPEC 统懋 | |||
Silicon PNP Power Transistors 文件:187.97 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:186.25 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon PNP Power Transistor 文件:85.02 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
140V/12A, AF 60W Output Applications | ONSEMI 安森美半导体 | |||
Silicon PNP transistor in a TO-3P Plastic Package. 文件:1.45625 Mbytes Page:7 Pages | FOSHAN 蓝箭电子 | |||
Silicon PNP Power Transistors 文件:204.87 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:204.87 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
2SB817C: Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L | ONSEMI 安森美半导体 | |||
封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 140V 12A TO3P-3L 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
For Low-Frequency Output Amplification 文件:81.75 Kbytes Page:4 Pages | Panasonic 松下 |
2SB81产品属性
- 类型
描述
- 型号
2SB81
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
PNP SILICON TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
CP-3 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SANYO/三洋 |
24+ |
NA/ |
4850 |
原装现货,当天可交货,原型号开票 |
|||
SANYO/三洋 |
20+ |
SOT23 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
ON/安森美 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
SANYO/三洋 |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
SANYO |
23+ |
SOT23 |
5000 |
原装正品,假一罚十 |
|||
ON |
25+ |
SOT23 |
4814 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
2447 |
SOT-23 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
22+ |
SOT-23 |
20000 |
只做原装 |
2SB81芯片相关品牌
2SB81规格书下载地址
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2SB81数据表相关新闻
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2021-9-10
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