2SB81晶体管资料

  • 2SB81(H)别名:2SB81(H)三极管、2SB81(H)晶体管、2SB81(H)晶体三极管

  • 2SB81(H)生产厂家:日本日立公司

  • 2SB81(H)制作材料:Ge-PNP

  • 2SB81(H)性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB81(H)封装形式:直插封装

  • 2SB81(H)极限工作电压:80V

  • 2SB81(H)最大电流允许值:0.5A

  • 2SB81(H)最大工作频率:<1MHZ或未知

  • 2SB81(H)引脚数:2

  • 2SB81(H)最大耗散功率:2W

  • 2SB81(H)放大倍数

  • 2SB81(H)图片代号:E-44

  • 2SB81(H)vtest:80

  • 2SB81(H)htest:999900

  • 2SB81(H)atest:0.5

  • 2SB81(H)wtest:2

  • 2SB81(H)代换 2SB81(H)用什么型号代替

2SB81价格

参考价格:¥0.4730

型号:2SB815-6-TB-E 品牌:ON 备注:这里有2SB81多少钱,2025年最近7天走势,今日出价,今日竞价,2SB81批发/采购报价,2SB81行情走势销售排行榜,2SB81报价。
型号 功能描述 生产厂家 企业 LOGO 操作

PNP SILICON TRANSISTOR

DESCRIPTION The 2SB810 is designed for use in output stages of portable radio and cassette type tape recorder, general purpose applications.

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • High Power Dissipation • Complement to Type 2SD1032 APPLICATIONS • Designed for AF power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Wide area of safe operation • Low collector saturation voltage APPLICATIONS • For audio frequency output applications

SAVANTIC

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

ONSEMI

安森美半导体

For General-Purpose AF Amplifier

General-Purpose AF Amplifier Applications Features • Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation voltage.

SANYO

三洋

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

ONSEMI

安森美半导体

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

ONSEMI

安森美半导体

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

ONSEMI

安森美半导体

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

ONSEMI

安森美半导体

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

ONSEMI

安森美半导体

For LF Power Amp,50W Output, Large Power Switching

For LF Power Amplifier, 50W Output Large Power Switching Applications Features • Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). • Wide ASO because of built-in ballast resistance. • Goode dependence of fT on current and good H

SANYO

三洋

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD1046 • Wide area of safe operation APPLICATIONS • For LF Power Amplifier, 50W Output Large Power Switching Applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD1046 • Wide area of safe operation APPLICATIONS • For LF Power Amplifier, 50W Output Large Power Switching Applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD1046 • Wide area of safe operation APPLICATIONS • For LF Power Amplifier, 50W Output Large Power Switching Applications

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEO=-120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD1046 APPLICATIONS • Designed for LF power amplifier, SOW output large power switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

TGS

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SD1047

WINGS

永盛电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD1047 APPLICATIONS • 140V/12A AF 60W output applications

JMNIC

锦美电子

140V/12A AF 60W Output Applications

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

SANYO

三洋

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

SANYO

三洋

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

ONSEMI

安森美半导体

140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio

ISC

无锡固电

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

ONSEMI

安森美半导体

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD1047E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

ISC

无锡固电

Power Transistor (PNP)

Features • 2SB817E transistor is designed for use in general purpose power amplifier, application

TAITRON

Silicon PNP epitaxial planer type(For low-frequency output amplification)

■ Features ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Panasonic

松下

ilicon PNP Power Transistors

文件:134.2 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistor

文件:70.48 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Good Linearity of hFE

文件:96.69 Kbytes Page:2 Pages

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistors

文件:36.48 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:992.15 Kbytes Page:3 Pages

KEXIN

科信电子

Bipolar Transistor

文件:68.91 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:68.91 Kbytes Page:4 Pages

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 15V 0.7A 3CP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP Transistors

文件:1.07087 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.07087 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Transistors

文件:1.07087 Mbytes Page:3 Pages

KEXIN

科信电子

Silicon PNP Power Transistors

文件:246.87 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:196.68 Kbytes Page:4 Pages

SAVANTIC

PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications

ONSEMI

安森美半导体

Silicon PNP Power Transistors

文件:246.87 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:246.87 Kbytes Page:4 Pages

JMNIC

锦美电子

TO-3P Plastic-Encapsulate Transistors

文件:588.53 Kbytes Page:4 Pages

JIANGSU

长电科技

Silicon PNP Power Transistors

文件:172.26 Kbytes Page:4 Pages

ISC

无锡固电

POWER TRANSISTORS(12A,140V,100W)

文件:123.7 Kbytes Page:3 Pages

MOSPEC

统懋

Silicon PNP Power Transistors

文件:187.97 Kbytes Page:4 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:186.25 Kbytes Page:4 Pages

SAVANTIC

Silicon PNP Power Transistor

文件:85.02 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

140V/12A, AF 60W Output Applications

ONSEMI

安森美半导体

Silicon PNP transistor in a TO-3P Plastic Package.

文件:1.45625 Mbytes Page:7 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistors

文件:204.87 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:204.87 Kbytes Page:4 Pages

JMNIC

锦美电子

2SB817C: Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L

ONSEMI

安森美半导体

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 140V 12A TO3P-3L 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

For Low-Frequency Output Amplification

文件:81.75 Kbytes Page:4 Pages

Panasonic

松下

2SB81产品属性

  • 类型

    描述

  • 型号

    2SB81

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    PNP SILICON TRANSISTOR

更新时间:2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
CP-3
3022
原厂订货渠道,支持BOM配单一站式服务
SANYO/三洋
24+
NA/
4850
原装现货,当天可交货,原型号开票
SANYO/三洋
20+
SOT23
49000
原装优势主营型号-可开原型号增税票
ON/安森美
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
SANYO/三洋
2223+
SOT-23
26800
只做原装正品假一赔十为客户做到零风险
SANYO
23+
SOT23
5000
原装正品,假一罚十
ON
25+
SOT23
4814
百分百原装正品 真实公司现货库存 本公司只做原装 可
三年内
1983
只做原装正品
ON/安森美
2447
SOT-23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON/安森美
22+
SOT-23
20000
只做原装

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