PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SD1047

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD1047 APPLICATIONS • 140V/12A AF 60W output applications

140V/12A AF 60W Output Applications

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

140V/12A, AF 60W Output Applications

Silicon PNP Power Transistors

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POWER TRANSISTORS(12A,140V,100W)

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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Silicon PNP transistor in a TO-3P Plastic Package.

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TO-3P Plastic-Encapsulate Transistors

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Silicon PNP Power Transistor

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140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD1047E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

Power Transistor (PNP)

Features • 2SB817E transistor is designed for use in general purpose power amplifier, application

Silicon PNP Power Transistors

文件：204.87 Kbytes Page：4 Pages

Silicon PNP Power Transistors

文件：204.87 Kbytes Page：4 Pages

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 140V 12A TO3P-3L 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Transistor (PNP)

General-Purpose Amplifier Transistors