Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

2SB817C: Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L

2SB817C is Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L. Large current capacitance\nWide SOA and high durability against breakdown\nAdoption of MBIT process;

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 140V 12A TO3P-3L 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SD1047

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

Power Transistor (PNP)

Features • 2SB817E transistor is designed for use in general purpose power amplifier, application

Silicon PNP Power Transistors

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POWER TRANSISTORS(12A,140V,100W)

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