Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

2SB817C: Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SD1047

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

POWER TRANSISTORS(12A,140V,100W)

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Silicon PNP Power Transistors

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Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 140V 12A TO3P-3L 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个