Power Transistor (PNP)

Features • 2SB817E transistor is designed for use in general purpose power amplifier, application

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD1047E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

Power Transistor (PNP)

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SD1047

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

Silicon PNP Power Transistors

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POWER TRANSISTORS(12A,140V,100W)

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