Power Transistor (PNP)

Features • 2SB817E transistor is designed for use in general purpose power amplifier, application

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SD1047E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

Power Transistor (PNP)

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SD1047

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

Silicon PNP Power Transistors

文件：186.25 Kbytes Page：4 Pages

POWER TRANSISTORS(12A,140V,100W)

文件：123.7 Kbytes Page：3 Pages