2SB70晶体管资料
2SB70别名:2SB70三极管、2SB70晶体管、2SB70晶体三极管
2SB70生产厂家:日本松下公司
2SB70制作材料:Ge-PNP
2SB70性质:低频或音频放大 (LF)
2SB70封装形式:直插封装
2SB70极限工作电压:30V
2SB70最大电流允许值:0.01A
2SB70最大工作频率:<1MHZ或未知
2SB70引脚数:3
2SB70最大耗散功率:0.125W
2SB70放大倍数:β=30
2SB70图片代号:C-17
2SB70vtest:30
2SB70htest:999900
- 2SB70atest:0.01
2SB70wtest:0.125
2SB70代换 2SB70用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER TRANSISTORS(4.0A,40W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 4.0 AMPERE COMPLEMENTARY POWER TRANSISTORS 80-100 VOLTS 50 WATTS | MOSPEC 统懋 | |||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • DC Current Gain- : hFE= 40~200 @IC= -0.5A • Complement to Type 2SD743 APPLICATIONS • Designed for use in audio frequency power amplifier, low speed switching applications. | ISC 无锡固电 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • DC Current Gain- : hFE= 40~200 @IC= -0.5A • Complement to Type 2SD743 APPLICATIONS • Designed for use in audio frequency power amplifier, low speed switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • Complement to type 2SD743 • High power dissipation APPLICATIONS • Designed for use in audio frequency power amplifier,low speed switching applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | ISC 无锡固电 | |||
PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR Audio Frequency Power Amplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR Audio Frequency Power Amplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SD745/745A/745B APPLICATIONS ·Audio frequency power amplifier ·Suitable for output stages of 60~120W audio amplifiers and voltage regulators | JMNIC 锦美电子 | |||
PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR Audio Frequency Power Amplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use | SAVANTIC | |||
Bipolar Power Transistors Support is limited to customers who have already adopted these products.\n\nA wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others. | RENESAS 瑞萨 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use | JMNIC 锦美电子 | |||
GE PNP ALLOY JUNCTION(UL TYPE) 1. Medium Power Amplifer 2. Complementary Pair with 2SD352 | PANASONIC 松下 | |||
Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) ■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | PANASONIC 松下 | |||
Silicon NPN epitaxial planer type Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through | PANASONIC 松下 | |||
Silicon PNP epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine | PANASONIC 松下 | |||
GE PNP ALLOY JUNCTION(UL TYPE) 1. Medium Power Amplifer 2. Complementary Pair with 2SD352 | PANASONIC 松下 | |||
丝印代码:BQ1;Silicon Epitaxial Planar Transistor FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS SOT-23 ● For general amplification complementary to 2SD601A | BILIN 银河微电 | |||
TRANSISTOR(PNP) FEATURES For general amplification Complementary to 2SD601A | HTSEMI 金誉半导体 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • For general amplification • Complementary to 2SD601A | JIANGSU 长电科技 | |||
Silicon PNP Epitaxial Planar Type ■ Features ● For general amplification ● Complimentary to 2SD601A. | KEXIN 科信电子 | |||
Plastic-Encapsulated Transistors FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
PNP Silicon General Purpose Transistor FEATURES • For general amplification • Complementary of the 2SD601A | SECOS 喜可士 | |||
丝印代码:BQ1/BR1/BS1;For general amplification complementary to 2SD601A. FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS ● For general amplification complementary to 2SD601A. | LUGUANG 鲁光电子 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES For general amplification Complementary to 2SD601A | DGNJDZ 南晶电子 | |||
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SD601A. Applications General power amplifier applications. | FOSHAN 蓝箭电子 | |||
Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
丝印代码:BQ;Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
丝印代码:BR;Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
丝印代码:BS;Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Silicon PNP Power Transistors 文件:96.83 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:128.13 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistor 文件:72.85 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:180.66 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:180.66 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:128.13 Kbytes Page:3 Pages | SAVANTIC | |||
PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR | 未知品牌 | |||
Silicon PNP Power Transistors 文件:128.13 Kbytes Page:3 Pages | SAVANTIC | |||
PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTOR | ||||
Silicon PNP Power Transistor 文件:69.19 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:182.61 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:182.61 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor 文件:69.93 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
PNP Transistors 文件:1.09462 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Silicon General Purpose Transistor 文件:623.42 Kbytes Page:3 Pages | SECOS 喜可士 | |||
PNP Silicon General Purpose Transistor 文件:623.42 Kbytes Page:3 Pages | SECOS 喜可士 | |||
丝印代码:BQ1;Silicon Epitaxial Planar Transistor 文件:179.28 Kbytes Page:4 Pages | BILIN 银河微电 |
2SB70产品属性
- 类型
描述
- PCM(W):
0.2
- IC(A):
0.1
- VCBO(V):
45
- VCEO(V):
45
- VEBO(V):
7
- hFEMin:
160
- hFEMax:
460
- hFE@VCE(V):
10
- hFE@IC(A):
0.002
- VCE(sat)(V):
0.5
- VCE(sat)\u001E@IC(A):
0.1
- VCE(sat)\u001E@IB(A):
0.01
- Package:
SOT-23
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC |
2023+ |
SOT-23 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
PAI |
08+ |
SOT |
899 |
只售原装正品 |
|||
PANASONIC |
24+ |
SOT23 |
1860 |
原装现货假一罚十 |
|||
Panasonic(松下) |
24+ |
SMD |
31512 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
PANASONIC |
2016+ |
SOT-23 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM |
23+ |
SOT23 |
20000 |
全新原装假一赔十 |
|||
Panason |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PANASONIC/松下 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
PANASONIC/松下 |
25+ |
SOT-23 |
32000 |
PANASONIC/松下全新特价2SB709ARL即刻询购立享优惠#长期有货 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
2SB70规格书下载地址
2SB70参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB720
- 2SB719
- 2SB718
- 2SB717
- 2SB716A
- 2SB716
- 2SB715
- 2SB714
- 2SB713
- 2SB712
- 2SB711
- 2SB710A
- 2SB710
- 2SB71
- 2SB709A
- 2SB709
- 2SB708
- 2SB707
- 2SB706A
- 2SB706
- 2SB705B
- 2SB705A
- 2SB705
- 2SB703(A)
- 2SB703
- 2SB702(A)
- 2SB701
- 2SB700(a)
- 2SB699
- 2SB698
- 2SB697K
- 2SB697
- 2SB696(K)
- 2SB696
- 2SB695
- 2SB694(H)
- 2SB693(H)
- 2SB692
- 2SB691
- 2SB690
- 2SB69
- 2SB689
- 2SB688
- 2SB686
- 2SB685
- 2SB683
- 2SB682
- 2SB681
- 2SB680
- 2SB68(H)
- 2SB679
- 2SB677
- 2SB676
- 2SB675
- 2SB674
2SB70数据表相关新闻
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2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SB857L-TO126CK-D-TG_UTC代理商
2SB857L-TO126CK-D-TG_UTC代理商
2023-2-142SB834L-TO220FT-O-TG_UTC代理商
2SB834L-TO220FT-O-TG_UTC代理商
2023-2-92SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
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- P109