位置：首页 > IC中文资料第2480页 > 2SB709
2SB709晶体管资料
2SB709别名：2SB709三极管、2SB709晶体管、2SB709晶体三极管
2SB709生产厂家：日本松下公司
2SB709制作材料：Si-PNP
2SB709性质：表面帖装型 （SMD）_通用型 （Uni）
2SB709封装形式：贴片封装
2SB709极限工作电压：25V
2SB709最大电流允许值：0.1A
2SB709最大工作频率：80MHZ
2SB709引脚数：3
2SB709最大耗散功率：
2SB709放大倍数：
2SB709图片代号：H-15
2SB709vtest：25
2SB709htest：80000000
- 2SB709atest：0.1
2SB709wtest：0
2SB709代换 2SB709用什么型号代替：BC856,BC857,BC858,BCW29,BCW30,BCW61,BCW69,BCW70,BCX71,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB709 | GE PNP ALLOY JUNCTION(UL TYPE) 1. Medium Power Amplifer 2. Complementary Pair with 2SD352 | Panasonic 松下 |   | |
2SB709 | GE PNP ALLOY JUNCTION(UL TYPE) | Panasonic 松下 | | |
Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) ■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | Panasonic 松下 | | ||
Plastic-Encapsulated Transistors FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | | ||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • For general amplification • Complementary to 2SD601A | JIANGSU 长电科技 | | ||
For general amplification complementary to 2SD601A. FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS ● For general amplification complementary to 2SD601A. | LUGUANG 鲁光电子 | | ||
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SD601A. Applications General power amplifier applications. | FOSHAN 蓝箭电子 | | ||
Silicon NPN epitaxial planer type Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through | Panasonic 松下 | | ||
Silicon PNP epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine | Panasonic 松下 | | ||
GE PNP ALLOY JUNCTION(UL TYPE) 1. Medium Power Amplifer 2. Complementary Pair with 2SD352 | Panasonic 松下 | | ||
Silicon Epitaxial Planar Transistor FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS SOT-23 ● For general amplification complementary to 2SD601A | BILIN 银河微电 | | ||
PNP Silicon General Purpose Transistor FEATURES • For general amplification • Complementary of the 2SD601A | SECOS 喜可士 | | ||
Silicon PNP Epitaxial Planar Type ■ Features ● For general amplification ● Complimentary to 2SD601A. | KEXIN 科信电子 | | ||
TRANSISTOR(PNP) FEATURES For general amplification Complementary to 2SD601A | HTSEMI 金誉半导体 | | ||
Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES For general amplification Complementary to 2SD601A | DGNJDZ 南晶电子 | | ||
Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
Power Dissipation ● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
PNP Silicon General Purpose Transistor 文件：623.42 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
PNP Transistors 文件：1.09462 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
Silicon Epitaxial Planar Transistor 文件：179.28 Kbytes Page：4 Pages | BILIN 银河微电 | | ||
PNP Silicon General Purpose Transistor 文件：623.42 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 文件：343.26 Kbytes Page：5 Pages | RECTRON 丽正国际 | | ||
双极型晶体管 | GALAXY 银河微电 | | ||
PNP小信号三极管 | CHINABASE 创基电子 | | ||
Silicon Epitaxial Planar Transistor 文件：190.52 Kbytes Page：4 Pages | BILIN 银河微电 | | ||
PNP Silicon General Purpose Transistor 文件：623.42 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
Silicon Epitaxial Planar Transistor 文件：179.28 Kbytes Page：4 Pages | BILIN 银河微电 | | ||
PNP Silicon General Purpose Transistor 文件：623.42 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
PNP Transistors 文件：1.09462 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.17318 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.09462 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.17318 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.09462 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.17318 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.09462 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.17318 Mbytes Page：2 Pages | KEXIN 科信电子 | |
2SB709产品属性
- 类型
描述
- 型号
2SB709
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEJIAXIN |
24+ |
NA/ |
9000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Panasonic(松下) |
24+ |
SMD |
31512 |
免费送样,账期支持,原厂直供,没有中间商赚差价 |
|||
ROHM |
23+ |
SOT23 |
20000 |
全新原装假一赔十 |
|||
Panason |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PANASONIC/松下 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
PANASONIC/松下 |
25+ |
SOT-23 |
32000 |
PANASONIC/松下全新特价2SB709ARL即刻询购立享优惠#长期有货 |
|||
PANASONIC/松下 |
24+ |
SOT23 |
880000 |
明嘉莱只做原装正品现货 |
|||
PANASONIC |
23+ |
SOT-23 |
3000 |
正规渠道,只有原装! |
|||
CJ |
23+ |
SOT23 |
8500 |
原厂原装正品 |
|||
松下 |
SOT-23 |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
2SB709芯片相关品牌
2SB709规格书下载地址
2SB709参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB734
- 2SB733
- 2SB731
- 2SB727K
- 2SB727
- 2SB726
- 2SB725
- 2SB724
- 2SB723
- 2SB722
- 2SB721
- 2SB720
- 2SB719
- 2SB718
- 2SB717
- 2SB716A
- 2SB716
- 2SB715
- 2SB714
- 2SB713
- 2SB712
- 2SB711
- 2SB710A
- 2SB710
- 2SB71
- 2SB709A
- 2SB708
- 2SB707
- 2SB706A
- 2SB706
- 2SB705B
- 2SB705A
- 2SB705
- 2SB703(A)
- 2SB703
- 2SB702(A)
- 2SB701
- 2SB700(a)
- 2SB70
- 2SB699
- 2SB698
- 2SB697K
- 2SB697
- 2SB696(K)
- 2SB696
- 2SB695
- 2SB694(H)
- 2SB693(H)
- 2SB692
- 2SB691
- 2SB690
- 2SB689
- 2SB688
- 2SB686
- 2SB683
2SB709数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SB857L-TO126CK-D-TG_UTC代理商
2SB857L-TO126CK-D-TG_UTC代理商
2023-2-142SB834L-TO220FT-O-TG_UTC代理商
2SB834L-TO220FT-O-TG_UTC代理商
2023-2-92SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
