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2SB709晶体管资料

  • 2SB709别名:2SB709三极管、2SB709晶体管、2SB709晶体三极管

  • 2SB709生产厂家:日本松下公司

  • 2SB709制作材料:Si-PNP

  • 2SB709性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SB709封装形式:贴片封装

  • 2SB709极限工作电压:25V

  • 2SB709最大电流允许值:0.1A

  • 2SB709最大工作频率:80MHZ

  • 2SB709引脚数:3

  • 2SB709最大耗散功率

  • 2SB709放大倍数

  • 2SB709图片代号:H-15

  • 2SB709vtest:25

  • 2SB709htest:80000000

  • 2SB709atest:0.1

  • 2SB709wtest:0

  • 2SB709代换 2SB709用什么型号代替:BC856,BC857,BC858,BCW29,BCW30,BCW61,BCW69,BCW70,BCX71,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB709

GE PNP ALLOY JUNCTION(UL TYPE)

1. Medium Power Amplifer 2. Complementary Pair with 2SD352

PANASONIC

松下

2SB709

GE PNP ALLOY JUNCTION(UL TYPE)

1. Medium Power Amplifer2. Complementary Pair with 2SD352

PANASONIC

松下

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) ■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

PANASONIC

松下

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • For general amplification • Complementary to 2SD601A

JIANGSU

长电科技

丝印代码:BQ1/BR1/BS1;For general amplification complementary to 2SD601A.

FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS ● For general amplification complementary to 2SD601A.

LUGUANG

鲁光电子

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SD601A. Applications General power amplifier applications.

FOSHAN

蓝箭电子

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through

PANASONIC

松下

Silicon PNP epitaxial planer type

For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

PANASONIC

松下

GE PNP ALLOY JUNCTION(UL TYPE)

1. Medium Power Amplifer 2. Complementary Pair with 2SD352

PANASONIC

松下

丝印代码:BQ1;Silicon Epitaxial Planar Transistor

FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS SOT-23 ● For general amplification complementary to 2SD601A

BILIN

银河微电

PNP Silicon General Purpose Transistor

FEATURES • For general amplification • Complementary of the 2SD601A

SECOS

喜可士

Silicon PNP Epitaxial Planar Type

■ Features ● For general amplification ● Complimentary to 2SD601A.

KEXIN

科信电子

TRANSISTOR(PNP)

FEATURES For general amplification Complementary to 2SD601A

HTSEMI

金誉半导体

Power Dissipation

● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SOT-23 Plastic-Encapsulate Transistors

FEATURES For general amplification Complementary to 2SD601A

DGNJDZ

南晶电子

丝印代码:BQ;Power Dissipation

● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:BR;Power Dissipation

● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:BS;Power Dissipation

● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Silicon General Purpose Transistor

文件:623.42 Kbytes Page:3 Pages

SECOS

喜可士

PNP Transistors

文件:1.09462 Mbytes Page:2 Pages

KEXIN

科信电子

丝印代码:BQ1;Silicon Epitaxial Planar Transistor

文件:179.28 Kbytes Page:4 Pages

BILIN

银河微电

PNP Silicon General Purpose Transistor

文件:623.42 Kbytes Page:3 Pages

SECOS

喜可士

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件:343.26 Kbytes Page:5 Pages

RECTRON

丽正

双极型晶体管

GALAXY

银河微电

PNP小信号三极管

CHINABASE

创基电子

Silicon Epitaxial Planar Transistor

文件:190.52 Kbytes Page:4 Pages

BILIN

银河微电

PNP Silicon General Purpose Transistor

文件:623.42 Kbytes Page:3 Pages

SECOS

喜可士

Silicon Epitaxial Planar Transistor

文件:179.28 Kbytes Page:4 Pages

BILIN

银河微电

PNP Silicon General Purpose Transistor

文件:623.42 Kbytes Page:3 Pages

SECOS

喜可士

PNP Transistors

文件:1.09462 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.17318 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.09462 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.17318 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.09462 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.17318 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.09462 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.17318 Mbytes Page:2 Pages

KEXIN

科信电子

2SB709产品属性

  • 类型

    描述

  • PCM(W):

    0.2

  • IC(A):

    0.1

  • VCBO(V):

    45

  • VCEO(V):

    45

  • VEBO(V):

    7

  • hFEMin:

    160

  • hFEMax:

    460

  • hFE@VCE(V):

    10

  • hFE@IC(A):

    0.002

  • VCE(sat)(V):

    0.5

  • VCE(sat)\u001E@IC(A):

    0.1

  • VCE(sat)\u001E@IB(A):

    0.01

  • Package:

    SOT-23

更新时间:2026-5-14 10:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Panasonic/松下
24+
SMD
9000
新进库存/原装
Panasonic(松下)
24+
SMD
31512
免费送样,账期支持,原厂直供,没有中间商赚差价
CJ
2450+
SOT23
9850
只做原装正品现货或订货假一赔十!
25+
66880
原装正品,欢迎询价
PANASONIC
24+
SOT-23
5000
全现原装公司现货
CJ/长电
25+
SOT-23
50000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
PANASONIC/松下
2223+
SOT23
26800
只做原装正品假一赔十为客户做到零风险
CJ/长电
25+
SOT-23
20000
原装
26+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
PANASONIC/松下
06+
SOT-23
3000
原装正品 可含税交易

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