丝印代码：BQ；Power Dissipation

● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C)

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through

Silicon PNP epitaxial planer type

For general amplification Complementary to 2SB0709A (2SB709A) ■ Features • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

GE PNP ALLOY JUNCTION(UL TYPE)

1. Medium Power Amplifer 2. Complementary Pair with 2SD352

丝印代码：BQ1；Silicon Epitaxial Planar Transistor

FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS SOT-23 ● For general amplification complementary to 2SD601A

PNP Silicon General Purpose Transistor

FEATURES • For general amplification • Complementary of the 2SD601A