Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drivers and solenoid drivers In such as OA and FA equipment

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) B APPLICATIONS ·Designed for low-frequency power a

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) APPLICATIONS • Designed for low-frequency power amplifiers and l

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA eq

Silicon PNP Power Transistors

文件：219.83 Kbytes Page：3 Pages